Spectroscopy and capacitance measurements of tunneling resonances in an Sb-implanted point contact.
We fabricated a split-gate defined point contact in a double gate enhancement mode Si-MOS device, and implanted Sb donor atoms using a self-aligned process. E-beam lithography in combination with a timed implant gives us excellent control over the placement of dopant atoms, and acts as a stepping stone to focused ion beam implantation of single donors. Our approach allows us considerable latitude in experimental design in-situ. We have identified two resonance conditions in the point contact conductance as a function of split gate voltage. Using tunneling spectroscopy, we probed their electronic structure as a function of temperature and magnetic field. We also determine the capacitive coupling between the resonant feature and several gates. Comparison between experimental values and extensive quasi-classical simulations constrain the location and energy of the resonant level. We discuss our results and how they may apply to resonant tunneling through a single donor.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1022986
- Report Number(s):
- SAND2010-5581C; TRN: US201118%%658
- Resource Relation:
- Conference: Proposed for presentation at the Silicon S&T Quantum Computing 4th Annual Workshop held August 23-24, 2010 in Albuquerque, NM.
- Country of Publication:
- United States
- Language:
- English
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