Title: Effective Carrier‐Concentration Tuning of SnO ₂ Quantum Dot Electron‐Selective Layers for High‐Performance Planar Perovskite Solar Cells

Abstract

Abstract The carrier concentration of the electron‐selective layer (ESL) and hole‐selective layer can significantly affect the performance of organic–inorganic lead halide perovskite solar cells (PSCs). Herein, a facile yet effective two‐step method, i.e., room‐temperature colloidal synthesis and low‐temperature removal of additive (thiourea), to control the carrier concentration of SnO ₂ quantum dot (QD) ESLs to achieve high‐performance PSCs is developed. By optimizing the electron density of SnO ₂ QD ESLs, a champion stabilized power output of 20.32% for the planar PSCs using triple cation perovskite absorber and 19.73% for those using CH ₃ NH ₃ PbI ₃ absorber is achieved. The superior uniformity of low‐temperature processed SnO ₂ QD ESLs also enables the fabrication of ≈19% efficiency PSCs with an aperture area of 1.0 cm ² and 16.97% efficiency flexible device. The results demonstrate the promise of carrier‐concentration‐controlled SnO ₂ QD ESLs for fabricating stable, efficient, reproducible, large‐scale, and flexible planar PSCs.

Authors:

Yang, Guang ^[1]; Chen, Cong ^[2]; Yao, Fang ^[3]; Chen, Zhiliang ^[3]; Zhang, Qi ^[3]; Zheng, Xiaolu ^[3]; Ma, Junjie ^[3]; Lei, Hongwei ^[3]; Qin, Pingli ^[1]; Xiong, Liangbin ^[3]; Ke, Weijun ^[3]; Li, Gang ^[4]; Yan, Yanfa ^[5]; Fang, Guojia  ^[3]

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+ Show Author Affiliations

1. Key Laboratory of Artificial Micro‐ and Nano‐structures of Ministry of Education of China School of Physics and Technology Wuhan University Wuhan 430072 P. R. China, Department of Electronic and Information Engineering The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong SAR China
2. Key Laboratory of Artificial Micro‐ and Nano‐structures of Ministry of Education of China School of Physics and Technology Wuhan University Wuhan 430072 P. R. China, Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization The University of Toledo Toledo OH 43606 USA
3. Key Laboratory of Artificial Micro‐ and Nano‐structures of Ministry of Education of China School of Physics and Technology Wuhan University Wuhan 430072 P. R. China
4. Department of Electronic and Information Engineering The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong SAR China
5. Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization The University of Toledo Toledo OH 43606 USA

Publication Date:

Tue Feb 27 00:00:00 EST 2018

Sponsoring Org.:

USDOE

OSTI Identifier:

1423149

Grant/Contract Number:  

DE‐FOA‐0000990

Resource Type:

Publisher's Accepted Manuscript

Journal Name:

Advanced Materials

Additional Journal Information:

Journal Name: Advanced Materials Journal Volume: 30 Journal Issue: 14; Journal ID: ISSN 0935-9648

Publisher:

Wiley Blackwell (John Wiley & Sons)

Country of Publication:

Germany

Language:

English