Application of a Focused, Pulsed X-Ray Beam to the Investigation of Single-Event Transients in Al0.3Ga0.7N/GaN HEMTs

Khachatrian, Ani; Roche, Nicolas J. -H.; Buchner, Stephen P.; Koehler, Andrew D.; Anderson, Travis J.; Hobart, Karl D.; McMorrow, Dale; LaLumondiere, Stephen D.; Wells, N. P.; Bonsall, J.; Dillingham, E. C.; Karuza, P.; Brewe, D. L.; Lotshaw, W. T.; Moss, Steven C.; Ferlet-Cavrois, Veronique; Muschitiello, Michele

doi:10.1109/TNS.2016.2641678

Title: Application of a Focused, Pulsed X-Ray Beam to the Investigation of Single-Event Transients in Al_0.3Ga_0.7N/GaN HEMTs

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Abstract

A focused, pulsed x-ray beam was used to compare SET characteristics in pristine and proton-irradiated Al_0.3Ga_0.7N/GaN HEMTs. Measured SET amplitudes and trailing-edge decay times were analyzed as was the collected charge, obtained by integrating the SET pulses over time. SETs generated in proton-irradiated HEMTs differed significantly from those in pristine HEMTs with regard to the decay times and collected charge. The decay times have previously been shown to be attributed to charge trapping by defect states that are caused either by imperfect material growth conditions or by protoninduced displacement damage. The longer decay times observed for proton-irradiated HEMTs are attributed to the presence of additional deep traps created when protons lose energy as they collide with the nuclei of constituent atoms. Comparison of electrical parameters measured before and immediately following exposure to the focused x-ray beam showed little change, confirming the absence of significant charge buildup in passivation layers by the x-rays themselves. In conclusion, a major advantage of the pulsed x-ray technique is that the region under the metal gate can be probed for single-event transients from the top side, an approach incompatible with pulsed-laser SEE testing that involves the use of visible light.

Authors:

Khachatrian, Ani ^[1]; Roche, Nicolas J. -H. ^[2]; Buchner, Stephen P. ^[3]; Koehler, Andrew D. ^[3]; Anderson, Travis J. ^[3]; Hobart, Karl D. ^[3]; McMorrow, Dale ^[3]; LaLumondiere, Stephen D. ^[4]; Wells, N. P. ^[4]; Bonsall, J. ^[4]; Dillingham, E. C. ^[4]; Karuza, P. ^[4]; Brewe, D. L. ^[5]; Lotshaw, W. T. ^[4]; Moss, Steven C. ^[4]; Ferlet-Cavrois, Veronique ^[6]; Muschitiello, Michele ^[6]

Sotera Defense, Annapolis Junction, MD (United States)
George Washington Univ., Washington, D.C. (United States)
Naval Research Lab., Washington, D.C. (United States)
The Aerospace Corp., El Segundo, CA (United States)
Argonne National Lab. (ANL), Argonne, IL (United States)
European Space Agency, Noordwijk (The Netherlands)

Publication Date:: Mon Dec 19 00:00:00 EST 2016

Research Org.:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division

OSTI Identifier:: 1421916

Grant/Contract Number:: AC02-06CH11357

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Transactions on Nuclear Science

Additional Journal Information:: Journal Volume: 64; Journal Issue: 1; Journal ID: ISSN 0018-9499

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 73 NUCLEAR PHYSICS AND RADIATION PHYSICS; aluminum gallium nitride; high electron mobility transistor; pulsed X-rays; single event transients; two-dimensional electron gas

Citation Formats


                    Khachatrian, Ani, Roche, Nicolas J. -H., Buchner, Stephen P., Koehler, Andrew D., Anderson, Travis J., Hobart, Karl D., McMorrow, Dale, LaLumondiere, Stephen D., Wells, N. P., Bonsall, J., Dillingham, E. C., Karuza, P., Brewe, D. L., Lotshaw, W. T., Moss, Steven C., Ferlet-Cavrois, Veronique, and Muschitiello, Michele. Application of a Focused, Pulsed X-Ray Beam to the Investigation of Single-Event Transients in Al0.3Ga0.7N/GaN HEMTs.  United States: N. p., 2016. 
Web.  doi:10.1109/TNS.2016.2641678.

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                    Khachatrian, Ani, Roche, Nicolas J. -H., Buchner, Stephen P., Koehler, Andrew D., Anderson, Travis J., Hobart, Karl D., McMorrow, Dale, LaLumondiere, Stephen D., Wells, N. P., Bonsall, J., Dillingham, E. C., Karuza, P., Brewe, D. L., Lotshaw, W. T., Moss, Steven C., Ferlet-Cavrois, Veronique, & Muschitiello, Michele. Application of a Focused, Pulsed X-Ray Beam to the Investigation of Single-Event Transients in Al0.3Ga0.7N/GaN HEMTs.  United States.  https://doi.org/10.1109/TNS.2016.2641678

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                    Khachatrian, Ani, Roche, Nicolas J. -H., Buchner, Stephen P., Koehler, Andrew D., Anderson, Travis J., Hobart, Karl D., McMorrow, Dale, LaLumondiere, Stephen D., Wells, N. P., Bonsall, J., Dillingham, E. C., Karuza, P., Brewe, D. L., Lotshaw, W. T., Moss, Steven C., Ferlet-Cavrois, Veronique, and Muschitiello, Michele. Mon .  
"Application of a Focused, Pulsed X-Ray Beam to the Investigation of Single-Event Transients in Al0.3Ga0.7N/GaN HEMTs".  United States.  https://doi.org/10.1109/TNS.2016.2641678.  https://www.osti.gov/servlets/purl/1421916.

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@article{osti_1421916,

  title        = {Application of a Focused, Pulsed X-Ray Beam to the Investigation of Single-Event Transients in Al0.3Ga0.7N/GaN HEMTs},

  author       = {Khachatrian, Ani and Roche, Nicolas J. -H. and Buchner, Stephen P. and Koehler, Andrew D. and Anderson, Travis J. and Hobart, Karl D. and McMorrow, Dale and LaLumondiere, Stephen D. and Wells, N. P. and Bonsall, J. and Dillingham, E. C. and Karuza, P. and Brewe, D. L. and Lotshaw, W. T. and Moss, Steven C. and Ferlet-Cavrois, Veronique and Muschitiello, Michele},

  abstractNote = {A focused, pulsed x-ray beam was used to compare SET characteristics in pristine and proton-irradiated Al0.3Ga0.7N/GaN HEMTs. Measured SET amplitudes and trailing-edge decay times were analyzed as was the collected charge, obtained by integrating the SET pulses over time. SETs generated in proton-irradiated HEMTs differed significantly from those in pristine HEMTs with regard to the decay times and collected charge. The decay times have previously been shown to be attributed to charge trapping by defect states that are caused either by imperfect material growth conditions or by protoninduced displacement damage. The longer decay times observed for proton-irradiated HEMTs are attributed to the presence of additional deep traps created when protons lose energy as they collide with the nuclei of constituent atoms. Comparison of electrical parameters measured before and immediately following exposure to the focused x-ray beam showed little change, confirming the absence of significant charge buildup in passivation layers by the x-rays themselves. In conclusion, a major advantage of the pulsed x-ray technique is that the region under the metal gate can be probed for single-event transients from the top side, an approach incompatible with pulsed-laser SEE testing that involves the use of visible light.},

  doi          = {10.1109/TNS.2016.2641678},

  journal      = {IEEE Transactions on Nuclear Science},

  number       = 1,

  volume       = 64,

  place        = {United States},

  year         = {Mon Dec 19 00:00:00 EST 2016},

  month        = {Mon Dec 19 00:00:00 EST 2016}

}

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Title: Application of a Focused, Pulsed X-Ray Beam to the Investigation of Single-Event Transients in Al0.3Ga0.7N/GaN HEMTs

Abstract

Citation Formats

Title: Application of a Focused, Pulsed X-Ray Beam to the Investigation of Single-Event Transients in Al_0.3Ga_0.7N/GaN HEMTs