The Effect of the Gate-Connected Field Plate on Single-Event Transients in AlGaN/GaN Schottky-Gate HEMTs

Khachatrian, A.; Buchner, S.; Koehler, A.; Affouda, C.; McMorrow, D.; LaLumondiere, S. D.; Dillingham, E. C.; Bonsall, J. P.; Scofield, A. C.; Brewe, D. L.

doi:10.1109/TNS.2019.2910493

Title: The Effect of the Gate-Connected Field Plate on Single-Event Transients in AlGaN/GaN Schottky-Gate HEMTs

Full Record
Other Related Research

Abstract

A focused pulsed X-ray beam is used to determine how the redistribution of the electric field by the gate-connected field plate affects single-event transient (SET) susceptibility of an AlGaN/GaN Schottky-gate HEMT on SiC. SETs generated by scanning the X-ray beam across the HEMT depend strongly on the presence of the field plate, radiation strike location, bias conditions, and X-ray photon energy. Furthermore, for the particular HEMT we tested, the gate-connected field plate reduces the electric-field strength near the edge of the gate by a factor of approximately 2, which results in faster decaying transients and less collected charge.

Authors:

^[1];

^[1]; McMorrow, D. ^[1];

^[2]; Dillingham, E. C. ^[2]; Bonsall, J. P. ^[2]; Scofield, A. C. ^[2];

^[3]

U.S. Naval Research Lab., Washington, D.C. (United States)
The Aerospace Corp., El Segundo, CA (United States)
Argonne National Lab. (ANL), Lemont, IL (United States)

Publication Date:: Tue May 07 00:00:00 EDT 2019

Research Org.:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:: US Department of the Navy, Office of Naval Research (ONR); USDOE

OSTI Identifier:: 1577096

Grant/Contract Number:: AC02-06CH11357

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Transactions on Nuclear Science

Additional Journal Information:: Journal Volume: 66; Journal Issue: 7; Journal ID: ISSN 0018-9499

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 73 NUCLEAR PHYSICS AND RADIATION PHYSICS; GaN; HEMT; X-rays; charge generation; gate-connected field plate; single-event transients (SETs); single-photon absorption

Citation Formats


                    Khachatrian, A., Buchner, S., Koehler, A., Affouda, C., McMorrow, D., LaLumondiere, S. D., Dillingham, E. C., Bonsall, J. P., Scofield, A. C., and Brewe, D. L. The Effect of the Gate-Connected Field Plate on Single-Event Transients in AlGaN/GaN Schottky-Gate HEMTs.  United States: N. p., 2019. 
Web.  doi:10.1109/TNS.2019.2910493.

Copy to clipboard


                    Khachatrian, A., Buchner, S., Koehler, A., Affouda, C., McMorrow, D., LaLumondiere, S. D., Dillingham, E. C., Bonsall, J. P., Scofield, A. C., & Brewe, D. L. The Effect of the Gate-Connected Field Plate on Single-Event Transients in AlGaN/GaN Schottky-Gate HEMTs.  United States.  https://doi.org/10.1109/TNS.2019.2910493

Copy to clipboard


                    Khachatrian, A., Buchner, S., Koehler, A., Affouda, C., McMorrow, D., LaLumondiere, S. D., Dillingham, E. C., Bonsall, J. P., Scofield, A. C., and Brewe, D. L. Tue .  
"The Effect of the Gate-Connected Field Plate on Single-Event Transients in AlGaN/GaN Schottky-Gate HEMTs".  United States.  https://doi.org/10.1109/TNS.2019.2910493.  https://www.osti.gov/servlets/purl/1577096.

Copy to clipboard


                    
@article{osti_1577096,

  title        = {The Effect of the Gate-Connected Field Plate on Single-Event Transients in AlGaN/GaN Schottky-Gate HEMTs},

  author       = {Khachatrian, A. and Buchner, S. and Koehler, A. and Affouda, C. and McMorrow, D. and LaLumondiere, S. D. and Dillingham, E. C. and Bonsall, J. P. and Scofield, A. C. and Brewe, D. L.},

  abstractNote = {A focused pulsed X-ray beam is used to determine how the redistribution of the electric field by the gate-connected field plate affects single-event transient (SET) susceptibility of an AlGaN/GaN Schottky-gate HEMT on SiC. SETs generated by scanning the X-ray beam across the HEMT depend strongly on the presence of the field plate, radiation strike location, bias conditions, and X-ray photon energy. Furthermore, for the particular HEMT we tested, the gate-connected field plate reduces the electric-field strength near the edge of the gate by a factor of approximately 2, which results in faster decaying transients and less collected charge.},

  doi          = {10.1109/TNS.2019.2910493},

  journal      = {IEEE Transactions on Nuclear Science},

  number       = 7,

  volume       = 66,

  place        = {United States},

  year         = {Tue May 07 00:00:00 EDT 2019},

  month        = {Tue May 07 00:00:00 EDT 2019}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1109/TNS.2019.2910493

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 7 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

Investigation of Single-Event Transients in AlGaN/GaN MIS-Gate HEMTs Using a Focused X-Ray Beam

Journal Article Khachatrian, Ani ; Roche, Nicolas Jean-Henri ; Buchner, Steven P. ; ... - IEEE Transactions on Nuclear Science

Focused, pulsed X-rays are implemented to generate single-event transients (SETs) in metal-insulator-semiconductor (MIS)-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) in order to examine the mechanisms responsible for SETs. Unlike Schottky-gate GaN HEMTs, where current flows between gate and drain when the device is biased "OFF," for the MIS-gate HEMTs, current flows between the source and drain. The presence of the SiNx insulating layer under the gate effectively blocks electrons on the gate from moving into the semiconductor. Short-duration SETs at the gate are caused by the collection of holes injected by the X-rays. SETs collected at the source and drain have anmore »« less
Cited by 5
https://doi.org/10.1109/TNS.2018.2885824

Full Text Available
Gate metal dependent electrical characteristics of AlGaN/GaN HEMTs

Journal Article Koo, Sang-Mo ; Kang, Min-Seok - Materials Research Bulletin

Highlights: • We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors. • We demonstrate the effect of the barrier height of Schottky gate metals. • The conduction mechanisms examine by comparing the experimental results with numerical simulations. • 2-DEG concentration depends on the barrier height of Schottky gate metals. - Abstract: We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) and the effect of the barrier height of Schottky gate metals. It is found that the threshold voltage of the HEMT structures with the Ni Schottky contact shows a positive shift compared to that of the Timore »« less
https://doi.org/10.1016/J.MATERRESBULL.2014.05.001
Application of a Focused, Pulsed X-Ray Beam to the Investigation of Single-Event Transients in Al_0.3Ga_0.7N/GaN HEMTs

Journal Article Khachatrian, Ani ; Roche, Nicolas J. -H. ; Buchner, Stephen P. ; ... - IEEE Transactions on Nuclear Science

A focused, pulsed x-ray beam was used to compare SET characteristics in pristine and proton-irradiated Al_0.3Ga_0.7N/GaN HEMTs. Measured SET amplitudes and trailing-edge decay times were analyzed as was the collected charge, obtained by integrating the SET pulses over time. SETs generated in proton-irradiated HEMTs differed significantly from those in pristine HEMTs with regard to the decay times and collected charge. The decay times have previously been shown to be attributed to charge trapping by defect states that are caused either by imperfect material growth conditions or by protoninduced displacement damage. The longer decay times observed for proton-irradiated HEMTs are attributedmore »« less
Cited by 8
https://doi.org/10.1109/TNS.2016.2641678

Full Text Available
I2 basal stacking fault as a degradation mechanism in reverse gate-biased AlGaN/GaN HEMTs

Journal Article Lang, A. C. ; Hart, J. L. ; Wen, J. G. ; ... - Applied Physics Letters

Here, we present the observation of a bias-induced, degradation-enhancing defect process in plasma-assisted molecular beam epitaxy grown reverse gate-biased AlGaN/GaN high electron mobility transistors (HEMTs), which is compatible with the current theoretical framework of HEMT degradation. Specifically, we utilize both conventional transmission electron microscopy and aberration-corrected transmission electron microscopy to analyze microstructural changes in not only high strained regions in degraded AlGaN/GaN HEMTs but also the extended gate-drain access region. We find a complex defect structure containing an I2 basal stacking fault and offer a potential mechanism for device degradation based on this defect structure. This work supports the realitymore »« less
Cited by 3
https://doi.org/10.1063/1.4963156
Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

Journal Article Li, Baikui ; Tang, Xi ; Chen, Kevin J., E-mail: eekjchen@ust.hk - Applied Physics Letters

In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode (SoH-LED) which is seamlessly integrated with the AlGaN/GaN high electron mobility transistor (HEMT), we studied the effect of on-chip light illumination on the de-trapping processes of electrons from both surface and bulk traps. Surface trapping was generated by applying OFF-state drain bias stress, while bulk trapping was generated by applying positive substrate bias stress. The de-trapping processes of surface and/or bulk traps were monitored by measuring the recovery of dynamic on-resistance R{sub on} and/or threshold voltage V{sub th} of the HEMT. The results show that the recovery processes ofmore »« less
https://doi.org/10.1063/1.4914455

Similar Records