Water-Vapor-Mediated Close-Spaced Vapor Transport Growth of Epitaxial Gallium Indium Phosphide Films on Gallium Arsenide Substrates

Greenaway, Ann L.; Bachman, Benjamin F.; Boucher, Jason W.; Funch, Christopher J.; Aloni, Shaul; Boettcher, Shannon W.

doi:10.1021/acsaem.7b00199

Title: Water-Vapor-Mediated Close-Spaced Vapor Transport Growth of Epitaxial Gallium Indium Phosphide Films on Gallium Arsenide Substrates

Abstract

Ga_1–xIn_xP is a technologically important III–V ternary semiconductor widely utilized in commercial and record-efficiency solar cells. We report the growth of Ga_1–xIn_xP by water-vapor-mediated close-spaced vapor transport. Because growth of III–V semiconductors in this system is controlled by diffusion of metal oxide species, we find that congruent transport from the mixed powder source requires complete annealing to form a single alloy phase. Growth from a fully alloyed source at water vapor concentrations of ~7000 ppm in H₂ at 850 °C affords smooth films with electron mobility of 1070 cm² V^–1 s^–1 and peak internal quantum efficiency of ~90% for carrier collection in a nonaqueous photoelectrochemical test cell.

Authors:

^[1]; Bachman, Benjamin F. ^[1]; Boucher, Jason W. ^[2]; Funch, Christopher J. ^[1]; Aloni, Shaul ^[3];

^[1]

Department of Chemistry and Biochemistry, University of Oregon, Eugene, Oregon 97403, United States
Department of Physics, University of Oregon, Eugene, Oregon 97403, United States
The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

Publication Date:: 2018-01-12

Research Org.:: Univ. of Oregon, Eugene, OR (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

OSTI Identifier:: 1418846

Grant/Contract Number:: EE0007361; AC02-05CH11231

Resource Type:: Accepted Manuscript

Journal Name:: ACS Applied Energy Materials

Additional Journal Information:: Journal Volume: 1; Journal Issue: 2; Journal ID: ISSN 2574-0962

Publisher:: American Chemical Society (ACS)

Country of Publication:: United States

Language:: English

Subject:: 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; epitaxy; Hall effect; III−V semiconductor; low-cost; photoelectrochemistry; photovoltaics

Citation Formats


                    Greenaway, Ann L., Bachman, Benjamin F., Boucher, Jason W., Funch, Christopher J., Aloni, Shaul, and Boettcher, Shannon W.. Water-Vapor-Mediated Close-Spaced Vapor Transport Growth of Epitaxial Gallium Indium Phosphide Films on Gallium Arsenide Substrates.  United States: N. p., 2018. 
Web.  doi:10.1021/acsaem.7b00199.

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                    Greenaway, Ann L., Bachman, Benjamin F., Boucher, Jason W., Funch, Christopher J., Aloni, Shaul, & Boettcher, Shannon W.. Water-Vapor-Mediated Close-Spaced Vapor Transport Growth of Epitaxial Gallium Indium Phosphide Films on Gallium Arsenide Substrates.  United States.  https://doi.org/10.1021/acsaem.7b00199

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                    Greenaway, Ann L., Bachman, Benjamin F., Boucher, Jason W., Funch, Christopher J., Aloni, Shaul, and Boettcher, Shannon W.. Fri .  
"Water-Vapor-Mediated Close-Spaced Vapor Transport Growth of Epitaxial Gallium Indium Phosphide Films on Gallium Arsenide Substrates".  United States.  https://doi.org/10.1021/acsaem.7b00199.  https://www.osti.gov/servlets/purl/1418846.

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@article{osti_1418846,

  title        = {Water-Vapor-Mediated Close-Spaced Vapor Transport Growth of Epitaxial Gallium Indium Phosphide Films on Gallium Arsenide Substrates},

  author       = {Greenaway, Ann L. and Bachman, Benjamin F. and Boucher, Jason W. and Funch, Christopher J. and Aloni, Shaul and Boettcher, Shannon W.},

  abstractNote = {Ga1–xInxP is a technologically important III–V ternary semiconductor widely utilized in commercial and record-efficiency solar cells. We report the growth of Ga1–xInxP by water-vapor-mediated close-spaced vapor transport. Because growth of III–V semiconductors in this system is controlled by diffusion of metal oxide species, we find that congruent transport from the mixed powder source requires complete annealing to form a single alloy phase. Growth from a fully alloyed source at water vapor concentrations of ~7000 ppm in H2 at 850 °C affords smooth films with electron mobility of 1070 cm2 V–1 s–1 and peak internal quantum efficiency of ~90% for carrier collection in a nonaqueous photoelectrochemical test cell.},

  doi          = {10.1021/acsaem.7b00199},

  journal      = {ACS Applied Energy Materials},

  number       = 2,

  volume       = 1,

  place        = {United States},

  year         = {2018},

  month        = {1}

}

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Figures / Tables:

Figure 1: A) Evolution of powder source θ/2θ XRD scans over the six growths from it. Grey areas highlight peaks indicative of a merged Ga_1-xIn_xP phase and distinct GaP phase. InP and GaP reference powder patterns are adapted from the International Crystal Structure Database. B) Evolution of [𝑰n]$src\atop{XRF}$ (open squares),more »

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