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Title: Water-Vapor-Mediated Close-Spaced Vapor Transport Growth of Epitaxial Gallium Indium Phosphide Films on Gallium Arsenide Substrates

Ga 1–xIn xP is a technologically important III–V ternary semiconductor widely utilized in commercial and record-efficiency solar cells. We report the growth of Ga 1–xIn xP by water-vapor-mediated close-spaced vapor transport. Because growth of III–V semiconductors in this system is controlled by diffusion of metal oxide species, we find that congruent transport from the mixed powder source requires complete annealing to form a single alloy phase. Growth from a fully alloyed source at water vapor concentrations of ~7000 ppm in H 2 at 850 °C affords smooth films with electron mobility of 1070 cm 2 V –1 s –1 and peak internal quantum efficiency of ~90% for carrier collection in a nonaqueous photoelectrochemical test cell.
Authors:
ORCiD logo [1] ;  [1] ;  [2] ;  [1] ;  [3] ; ORCiD logo [1]
  1. Department of Chemistry and Biochemistry, University of Oregon, Eugene, Oregon 97403, United States
  2. Department of Physics, University of Oregon, Eugene, Oregon 97403, United States
  3. The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
Publication Date:
Grant/Contract Number:
EE0007361; AC02-05CH11231
Type:
Accepted Manuscript
Journal Name:
ACS Applied Energy Materials
Additional Journal Information:
Journal Volume: 1; Journal Issue: 2; Journal ID: ISSN 2574-0962
Publisher:
American Chemical Society (ACS)
Research Org:
Univ. of Oregon, Eugene, OR (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; epitaxy; Hall effect; III−V semiconductor; low-cost; photoelectrochemistry; photovoltaics
OSTI Identifier:
1418846

Greenaway, Ann L., Bachman, Benjamin F., Boucher, Jason W., Funch, Christopher J., Aloni, Shaul, and Boettcher, Shannon W.. Water-Vapor-Mediated Close-Spaced Vapor Transport Growth of Epitaxial Gallium Indium Phosphide Films on Gallium Arsenide Substrates. United States: N. p., Web. doi:10.1021/acsaem.7b00199.
Greenaway, Ann L., Bachman, Benjamin F., Boucher, Jason W., Funch, Christopher J., Aloni, Shaul, & Boettcher, Shannon W.. Water-Vapor-Mediated Close-Spaced Vapor Transport Growth of Epitaxial Gallium Indium Phosphide Films on Gallium Arsenide Substrates. United States. doi:10.1021/acsaem.7b00199.
Greenaway, Ann L., Bachman, Benjamin F., Boucher, Jason W., Funch, Christopher J., Aloni, Shaul, and Boettcher, Shannon W.. 2018. "Water-Vapor-Mediated Close-Spaced Vapor Transport Growth of Epitaxial Gallium Indium Phosphide Films on Gallium Arsenide Substrates". United States. doi:10.1021/acsaem.7b00199.
@article{osti_1418846,
title = {Water-Vapor-Mediated Close-Spaced Vapor Transport Growth of Epitaxial Gallium Indium Phosphide Films on Gallium Arsenide Substrates},
author = {Greenaway, Ann L. and Bachman, Benjamin F. and Boucher, Jason W. and Funch, Christopher J. and Aloni, Shaul and Boettcher, Shannon W.},
abstractNote = {Ga1–xInxP is a technologically important III–V ternary semiconductor widely utilized in commercial and record-efficiency solar cells. We report the growth of Ga1–xInxP by water-vapor-mediated close-spaced vapor transport. Because growth of III–V semiconductors in this system is controlled by diffusion of metal oxide species, we find that congruent transport from the mixed powder source requires complete annealing to form a single alloy phase. Growth from a fully alloyed source at water vapor concentrations of ~7000 ppm in H2 at 850 °C affords smooth films with electron mobility of 1070 cm2 V–1 s–1 and peak internal quantum efficiency of ~90% for carrier collection in a nonaqueous photoelectrochemical test cell.},
doi = {10.1021/acsaem.7b00199},
journal = {ACS Applied Energy Materials},
number = 2,
volume = 1,
place = {United States},
year = {2018},
month = {1}
}