Water-Vapor-Mediated Close-Spaced Vapor Transport Growth of Epitaxial Gallium Indium Phosphide Films on Gallium Arsenide Substrates

Greenaway, Ann L.; Bachman, Benjamin F.; Boucher, Jason W.; Funch, Christopher J.; Aloni, Shaul; Boettcher, Shannon W.

doi:10.1021/acsaem.7b00199

Title: Water-Vapor-Mediated Close-Spaced Vapor Transport Growth of Epitaxial Gallium Indium Phosphide Films on Gallium Arsenide Substrates

Abstract

Ga_1–xIn_xP is a technologically important III–V ternary semiconductor widely utilized in commercial and record-efficiency solar cells. We report the growth of Ga_1–xIn_xP by water-vapor-mediated close-spaced vapor transport. Because growth of III–V semiconductors in this system is controlled by diffusion of metal oxide species, we find that congruent transport from the mixed powder source requires complete annealing to form a single alloy phase. Growth from a fully alloyed source at water vapor concentrations of ~7000 ppm in H₂ at 850 °C affords smooth films with electron mobility of 1070 cm² V^–1 s^–1 and peak internal quantum efficiency of ~90% for carrier collection in a nonaqueous photoelectrochemical test cell.

Authors:

^[1]; Bachman, Benjamin F. ^[1]; Boucher, Jason W. ^[2]; Funch, Christopher J. ^[1]; Aloni, Shaul ^[3];

^[1]

Department of Chemistry and Biochemistry, University of Oregon, Eugene, Oregon 97403, United States
Department of Physics, University of Oregon, Eugene, Oregon 97403, United States
The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

Publication Date:: Fri Jan 12 00:00:00 EST 2018

Research Org.:: Univ. of Oregon, Eugene, OR (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

OSTI Identifier:: 1418846

Grant/Contract Number:: EE0007361; AC02-05CH11231

Resource Type:: Accepted Manuscript

Journal Name:: ACS Applied Energy Materials

Additional Journal Information:: Journal Volume: 1; Journal Issue: 2; Journal ID: ISSN 2574-0962

Publisher:: American Chemical Society (ACS)

Country of Publication:: United States

Language:: English

Subject:: 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; epitaxy; Hall effect; III−V semiconductor; low-cost; photoelectrochemistry; photovoltaics

Citation Formats


                    Greenaway, Ann L., Bachman, Benjamin F., Boucher, Jason W., Funch, Christopher J., Aloni, Shaul, and Boettcher, Shannon W. Water-Vapor-Mediated Close-Spaced Vapor Transport Growth of Epitaxial Gallium Indium Phosphide Films on Gallium Arsenide Substrates.  United States: N. p., 2018. 
Web.  doi:10.1021/acsaem.7b00199.

Copy to clipboard


                    Greenaway, Ann L., Bachman, Benjamin F., Boucher, Jason W., Funch, Christopher J., Aloni, Shaul, & Boettcher, Shannon W. Water-Vapor-Mediated Close-Spaced Vapor Transport Growth of Epitaxial Gallium Indium Phosphide Films on Gallium Arsenide Substrates.  United States.  https://doi.org/10.1021/acsaem.7b00199

Copy to clipboard


                    Greenaway, Ann L., Bachman, Benjamin F., Boucher, Jason W., Funch, Christopher J., Aloni, Shaul, and Boettcher, Shannon W. Fri .  
"Water-Vapor-Mediated Close-Spaced Vapor Transport Growth of Epitaxial Gallium Indium Phosphide Films on Gallium Arsenide Substrates".  United States.  https://doi.org/10.1021/acsaem.7b00199.  https://www.osti.gov/servlets/purl/1418846.

Copy to clipboard


                    
@article{osti_1418846,

  title        = {Water-Vapor-Mediated Close-Spaced Vapor Transport Growth of Epitaxial Gallium Indium Phosphide Films on Gallium Arsenide Substrates},

  author       = {Greenaway, Ann L. and Bachman, Benjamin F. and Boucher, Jason W. and Funch, Christopher J. and Aloni, Shaul and Boettcher, Shannon W.},

  abstractNote = {Ga1–xInxP is a technologically important III–V ternary semiconductor widely utilized in commercial and record-efficiency solar cells. We report the growth of Ga1–xInxP by water-vapor-mediated close-spaced vapor transport. Because growth of III–V semiconductors in this system is controlled by diffusion of metal oxide species, we find that congruent transport from the mixed powder source requires complete annealing to form a single alloy phase. Growth from a fully alloyed source at water vapor concentrations of ~7000 ppm in H2 at 850 °C affords smooth films with electron mobility of 1070 cm2 V–1 s–1 and peak internal quantum efficiency of ~90% for carrier collection in a nonaqueous photoelectrochemical test cell.},

  doi          = {10.1021/acsaem.7b00199},

  journal      = {ACS Applied Energy Materials},

  number       = 2,

  volume       = 1,

  place        = {United States},

  year         = {Fri Jan 12 00:00:00 EST 2018},

  month        = {Fri Jan 12 00:00:00 EST 2018}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1021/acsaem.7b00199

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 2 works

Citation information provided by
Web of Science

Figures / Tables:

Figure 1: A) Evolution of powder source θ/2θ XRD scans over the six growths from it. Grey areas highlight peaks indicative of a merged Ga_1-xIn_xP phase and distinct GaP phase. InP and GaP reference powder patterns are adapted from the International Crystal Structure Database. B) Evolution of [𝑰n]$src\atop{XRF}$ (open squares),more »

All figures and tables (5 total)

Save / Share:

Export Metadata

Save to My Library

Figures / Tables found in this record:

Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.

Similar Records in DOE PAGES and OSTI.GOV collections:

Final Report: Vapor Transport Deposition for Thin Film III-V Photovoltaics

Technical Report Boettcher, Shannon ; Greenaway, Ann ; Boucher, Jason ; ...

Silicon, the dominant photovoltaic (PV) technology, is reaching its fundamental performance limits as a single absorber/junction technology. Higher efficiency devices are needed to reduce cost further because the balance of systems account for about two-thirds of the overall cost of the solar electricity. III-V semiconductors such as GaAs are used to make the highest-efficiency photovoltaic devices, but the costs of manufacture are much too high for non-concentrated terrestrial applications. The cost of III-V’s is driven by two factors: (1) metal-organic chemical vapor deposition (MOCVD), the dominant growth technology, employs expensive, toxic and pyrophoric gas-phase precursors, and (2) the growth substratesmore »« less
https://doi.org/10.2172/1237455

Full Text Available
Low-Cost III-V Photovoltaic Materials by Chloride Vapor Transport Deposition Using Safe Solid Precursors

Technical Report Boettcher, Shannon ; Aloni, Shaul ; Weiss, Robert

Si-based photovoltaic devices dominate the market. As photovoltaic (PV) manufacturing costs have plummeted, technologies which increase efficiency have become critical. Si cell efficiencies are nearing theoretical limits and Si-based PV modules are unlikely to reach the 25-30% efficiency range. The use of III-V semiconductors is an obvious technical solution to improve efficiency, especially if they can be integrated directly with existing Si technology as tandems. High coefficients of light absorption along with tunable bandgaps and lattice constants have resulted in record conversion efficiencies for both one-sun and concentrator PV applications. GaAs, for example, has been used to manufacture single-junction photovoltaicsmore »« less
https://doi.org/10.2172/1455018

Full Text Available
Gallium phosphide/gallium arsenide phosphide strained-layer superlattice electrodes. Effect of the terminating layer on photoelectrochemical properties

Journal Article Zuhoski, S P ; Johnson, P B ; Ellis, A B ; ... - J. Phys. Chem.; (United States)

Pairs of strained-layer superlattices (SLS's) have been studied as photoanodes in photoelectrochemical cells (PEC's) employing aqueous ditelluride electrolyte. The SLS's are comprised of alternating layers of n-GaP and a n-GaAs/sub 1-x/P/sub x/ alloy (x approx. 0.6) with a total of 25 periods; the pairs are grown under matched conditions with one member terminating in the alloy composition and its counterpart in GaP. The pairs possess common bulk properties but different surfaces. While all samples examined gave good efficiencies for the conversion of 458- and 514-nm ultraband gap (E/sub g/ approx. 2.1 eV) monochromatic light to electricity (in some cases approx.more »« less
https://doi.org/10.1021/j100324a054
Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy

Journal Article Metaferia, Wondwosen ; Schulte, Kevin L. ; Simon, John ; ... - Nature Communications

Abstract We report gallium arsenide (GaAs) growth rates exceeding 300 µm h ⁻¹ using dynamic hydride vapor phase epitaxy. We achieved these rates by maximizing the gallium to gallium monochloride conversion efficiency, and by utilizing a mass-transport-limited growth regime with fast kinetics. We also demonstrate gallium indium phosphide growth at rates exceeding 200 µm h ⁻¹ using similar growth conditions. We grew GaAs solar cell devices by incorporating the high growth rate of GaAs and evaluated its material quality at these high rates. Solar cell growth rates ranged from 35 to 309 µm h ⁻¹ with open circuit voltages ranging from 1.04 to 1.07 V. Themore »« less
Cited by 56
https://doi.org/10.1038/s41467-019-11341-3
Solution Phase Synthesis of Indium Gallium Phosphide Alloy Nanowires

Journal Article Kornienko, Nikolay ; Whitmore, Desiré D. ; Yu, Yi ; ... - ACS Nano

The tunable physical and electronic structure of III–V semiconductor alloys renders them uniquely useful for a variety of applications, including biological imaging, transistors, and solar energy conversion. However, their fabrication typically requires complex gas phase instrumentation or growth from high-temperature melts, which consequently limits their prospects for widespread implementation. Furthermore, the need for lattice matched growth substrates in many cases confines the composition of the materials to a narrow range that can be epitaxially grown. In this work, we present a solution phase synthesis for indium gallium phosphide (In_xGa_1–xP) alloy nanowires, whose indium/gallium ratio, and consequently, physical and electronic structure,more »« less
Cited by 39
https://doi.org/10.1021/nn507335j

Full Text Available

Similar Records