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Title: Heitler-London model for acceptor-acceptor interactions in doped semiconductors

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USDOE Office of Science (SC), Basic Energy Sciences (BES)
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Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 96 Journal Issue: 15; Journal ID: ISSN 2469-9950
American Physical Society
Country of Publication:
United States

Citation Formats

Durst, Adam C., Castoria, Kyle E., and Bhatt, R. N. Heitler-London model for acceptor-acceptor interactions in doped semiconductors. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.96.155208.
Durst, Adam C., Castoria, Kyle E., & Bhatt, R. N. Heitler-London model for acceptor-acceptor interactions in doped semiconductors. United States.
Durst, Adam C., Castoria, Kyle E., and Bhatt, R. N. Thu . "Heitler-London model for acceptor-acceptor interactions in doped semiconductors". United States.
title = {Heitler-London model for acceptor-acceptor interactions in doped semiconductors},
author = {Durst, Adam C. and Castoria, Kyle E. and Bhatt, R. N.},
abstractNote = {},
doi = {10.1103/PhysRevB.96.155208},
journal = {Physical Review B},
number = 15,
volume = 96,
place = {United States},
year = {2017},
month = {10}

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