Heitler-London model for acceptor-acceptor interactions in doped semiconductors
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1405050
- Grant/Contract Number:
- SC0002140
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Name: Physical Review B Journal Volume: 96 Journal Issue: 15; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Durst, Adam C., Castoria, Kyle E., and Bhatt, R. N. Heitler-London model for acceptor-acceptor interactions in doped semiconductors. United States: N. p., 2017.
Web. doi:10.1103/PhysRevB.96.155208.
Durst, Adam C., Castoria, Kyle E., & Bhatt, R. N. Heitler-London model for acceptor-acceptor interactions in doped semiconductors. United States. https://doi.org/10.1103/PhysRevB.96.155208
Durst, Adam C., Castoria, Kyle E., and Bhatt, R. N. Thu .
"Heitler-London model for acceptor-acceptor interactions in doped semiconductors". United States. https://doi.org/10.1103/PhysRevB.96.155208.
@article{osti_1405050,
title = {Heitler-London model for acceptor-acceptor interactions in doped semiconductors},
author = {Durst, Adam C. and Castoria, Kyle E. and Bhatt, R. N.},
abstractNote = {},
doi = {10.1103/PhysRevB.96.155208},
journal = {Physical Review B},
number = 15,
volume = 96,
place = {United States},
year = {2017},
month = {10}
}
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https://doi.org/10.1103/PhysRevB.96.155208
https://doi.org/10.1103/PhysRevB.96.155208
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Cited by: 3 works
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