Heitler-London model for acceptor-acceptor interactions in doped semiconductors
Abstract
Not provided.
- Authors:
- Publication Date:
- Research Org.:
- Princeton Univ., NJ (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1540717
- DOE Contract Number:
- SC0002140
- Resource Type:
- Journal Article
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 96; Journal Issue: 15; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- Materials Science; Physics
Citation Formats
Durst, Adam C., Castoria, Kyle E., and Bhatt, R. N. Heitler-London model for acceptor-acceptor interactions in doped semiconductors. United States: N. p., 2017.
Web. doi:10.1103/physrevb.96.155208.
Durst, Adam C., Castoria, Kyle E., & Bhatt, R. N. Heitler-London model for acceptor-acceptor interactions in doped semiconductors. United States. https://doi.org/10.1103/physrevb.96.155208
Durst, Adam C., Castoria, Kyle E., and Bhatt, R. N. 2017.
"Heitler-London model for acceptor-acceptor interactions in doped semiconductors". United States. https://doi.org/10.1103/physrevb.96.155208.
@article{osti_1540717,
title = {Heitler-London model for acceptor-acceptor interactions in doped semiconductors},
author = {Durst, Adam C. and Castoria, Kyle E. and Bhatt, R. N.},
abstractNote = {Not provided.},
doi = {10.1103/physrevb.96.155208},
url = {https://www.osti.gov/biblio/1540717},
journal = {Physical Review B},
issn = {2469-9950},
number = 15,
volume = 96,
place = {United States},
year = {Sun Oct 01 00:00:00 EDT 2017},
month = {Sun Oct 01 00:00:00 EDT 2017}
}
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