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Title: Application of copper thiocyanate for high open‐circuit voltages of CdTe solar cells

Abstract

Abstract Copper thiocyanate (CuSCN) has proven to be a low‐cost, efficient hole‐transporting material for the emerging organic–inorganic perovskite solar cells. Herein, we report that CuSCN can also be applied to CdTe thin‐film solar cells to achieve high open‐circuit voltages ( V OC s). By optimizing the thickness of the thermally evaporated CuSCN films, CdTe cells fabricated by close space sublimation in the superstrate configuration have achieved V OC s as high as 872 mV, which is about 20–25 mV higher than the highest V OC for the reference cells using the standard Cu/Au back contacts. CuSCN is a wide bandgap p ‐type conductor with a conduction band higher than that of CdTe, leading to a conduction band offset that reflects electrons in CdTe, partially explaining the improved V OC s. However, due to the low conductivity of CuSCN, CdTe cells using CuSCN/Au back contacts exhibited slightly lower fill factors than the cells using Cu/Au back contacts. With optimized CdS:O window layers, the power conversion efficiency of the best CdTe cell, using CuSCN/Au back contact, is 14.7%: slightly lower than that of the best cell (15.2%) using Cu/Au back contact. Copyright © 2015 John Wiley & Sons, Ltd.

Authors:
 [1];  [1]
  1. Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization University of Toledo Toledo OH 43606 USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1401147
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Progress in Photovoltaics
Additional Journal Information:
Journal Name: Progress in Photovoltaics Journal Volume: 24 Journal Issue: 1; Journal ID: ISSN 1062-7995
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Paudel, Naba R., and Yan, Yanfa. Application of copper thiocyanate for high open‐circuit voltages of CdTe solar cells. United Kingdom: N. p., 2015. Web. doi:10.1002/pip.2660.
Paudel, Naba R., & Yan, Yanfa. Application of copper thiocyanate for high open‐circuit voltages of CdTe solar cells. United Kingdom. https://doi.org/10.1002/pip.2660
Paudel, Naba R., and Yan, Yanfa. Wed . "Application of copper thiocyanate for high open‐circuit voltages of CdTe solar cells". United Kingdom. https://doi.org/10.1002/pip.2660.
@article{osti_1401147,
title = {Application of copper thiocyanate for high open‐circuit voltages of CdTe solar cells},
author = {Paudel, Naba R. and Yan, Yanfa},
abstractNote = {Abstract Copper thiocyanate (CuSCN) has proven to be a low‐cost, efficient hole‐transporting material for the emerging organic–inorganic perovskite solar cells. Herein, we report that CuSCN can also be applied to CdTe thin‐film solar cells to achieve high open‐circuit voltages ( V OC s). By optimizing the thickness of the thermally evaporated CuSCN films, CdTe cells fabricated by close space sublimation in the superstrate configuration have achieved V OC s as high as 872 mV, which is about 20–25 mV higher than the highest V OC for the reference cells using the standard Cu/Au back contacts. CuSCN is a wide bandgap p ‐type conductor with a conduction band higher than that of CdTe, leading to a conduction band offset that reflects electrons in CdTe, partially explaining the improved V OC s. However, due to the low conductivity of CuSCN, CdTe cells using CuSCN/Au back contacts exhibited slightly lower fill factors than the cells using Cu/Au back contacts. With optimized CdS:O window layers, the power conversion efficiency of the best CdTe cell, using CuSCN/Au back contact, is 14.7%: slightly lower than that of the best cell (15.2%) using Cu/Au back contact. Copyright © 2015 John Wiley & Sons, Ltd.},
doi = {10.1002/pip.2660},
journal = {Progress in Photovoltaics},
number = 1,
volume = 24,
place = {United Kingdom},
year = {Wed Jul 22 00:00:00 EDT 2015},
month = {Wed Jul 22 00:00:00 EDT 2015}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1002/pip.2660

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