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Title: Current enhancement of CdTe-based solar cells

Abstract

We report on the realization of CdTe solar cell photocurrent enhancement using an n-type CdSe heterojunction partner sputtered on commercial SnO 2/SnO 2:F coated soda-lime glass substrates. With high-temperature close-space sublimation CdTe deposition followed by CdCl 2 activation, this thin-film stack allows for substantial interdiffusion at the CdSe/CdTe interface facilitating a CdSe xTe 1-x alloy formation. The bowing effect causes a reduced optical bandgap of the alloyed absorber layer and, therefore, leads to current enhancement in the long-wavelength region and a decrease in open-circuit voltage (V OC). To overcome the V OC loss and maintain a high short-circuit current (J SC), the CdTe cell configuration has been modified using combined CdS:O/CdSe window layers. The new device structure has demonstrated enhanced collection from both short-and long-wavelength regions as well as a V OC improvement. With an optimized synthesis process, a small-area cell using CdS:O/CdSe window layer showed an efficiency of 15.2% with a V OC of 831 mV, a J SC of 26.3 mA/cm 2, and a fill factor of 69.5%, measured under an AM1.5 illumination without antireflection coating. Furthermore, the results provide new directions for further improvement of CdTe-based solar cells.

Authors:
 [1];  [2];  [2];  [1]
  1. Univ. of Toledo, Toledo, OH (United States)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Laboratory Directed Research and Development (LDRD) Program
OSTI Identifier:
1238008
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article
Journal Name:
IEEE Journal of Photovoltaics
Additional Journal Information:
Journal Volume: 5; Journal Issue: 5; Journal ID: ISSN 2156-3381
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; CdSe; close-space sublimation (CSS); thin film; window layer

Citation Formats

Paudel, Naba R., Poplawsky, Jonathan D., More, Karren Leslie, and Yan, Yanfa. Current enhancement of CdTe-based solar cells. United States: N. p., 2015. Web. doi:10.1109/JPHOTOV.2015.2458040.
Paudel, Naba R., Poplawsky, Jonathan D., More, Karren Leslie, & Yan, Yanfa. Current enhancement of CdTe-based solar cells. United States. doi:10.1109/JPHOTOV.2015.2458040.
Paudel, Naba R., Poplawsky, Jonathan D., More, Karren Leslie, and Yan, Yanfa. Thu . "Current enhancement of CdTe-based solar cells". United States. doi:10.1109/JPHOTOV.2015.2458040.
@article{osti_1238008,
title = {Current enhancement of CdTe-based solar cells},
author = {Paudel, Naba R. and Poplawsky, Jonathan D. and More, Karren Leslie and Yan, Yanfa},
abstractNote = {We report on the realization of CdTe solar cell photocurrent enhancement using an n-type CdSe heterojunction partner sputtered on commercial SnO2/SnO2:F coated soda-lime glass substrates. With high-temperature close-space sublimation CdTe deposition followed by CdCl2 activation, this thin-film stack allows for substantial interdiffusion at the CdSe/CdTe interface facilitating a CdSexTe1-x alloy formation. The bowing effect causes a reduced optical bandgap of the alloyed absorber layer and, therefore, leads to current enhancement in the long-wavelength region and a decrease in open-circuit voltage (VOC). To overcome the VOC loss and maintain a high short-circuit current (JSC), the CdTe cell configuration has been modified using combined CdS:O/CdSe window layers. The new device structure has demonstrated enhanced collection from both short-and long-wavelength regions as well as a VOC improvement. With an optimized synthesis process, a small-area cell using CdS:O/CdSe window layer showed an efficiency of 15.2% with a VOC of 831 mV, a JSC of 26.3 mA/cm2, and a fill factor of 69.5%, measured under an AM1.5 illumination without antireflection coating. Furthermore, the results provide new directions for further improvement of CdTe-based solar cells.},
doi = {10.1109/JPHOTOV.2015.2458040},
journal = {IEEE Journal of Photovoltaics},
issn = {2156-3381},
number = 5,
volume = 5,
place = {United States},
year = {2015},
month = {7}
}