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Title: Cation ratio fluctuations in Cu 2 ZnSnS 4 at the 20 nm length scale investigated by analytical electron microscopy

Abstract

Kesterite Cu 2 ZnSn(S,Se) 4 (CZTSSe) is a sustainable material for thin‐film photovoltaics with device efficiencies greater than 12% have been demonstrated. Despite similar crystal structure and polycrystalline film microstructures, there is widespread evidence for larger‐amplitude potential and bandgap fluctuations in CZTS than in the analogous Cu(In,Ga)Se 2 (CIGSe) chalcopyrite material. This disorder is believed to account for a sizable part of the larger open‐circuit voltage ( V OC ) deficit in CZTS devices, yet the detailed origins and length scales of these fluctuations have not been fully elucidated. Herein, we present a transmission electron microscopy study focusing on composition variation within bulk multicrystals of CZTS grown by the travelling heater method (THM). In these slow‐cooled, solution grown crystals we find direct evidence for spatial composition fluctuations of amplitude <1 at.% (∼5 × 10 20  cm −3 ) and thus, explainable by point defects. However, rather than being homogeneously‐distributed we find a characteristic 20 nm length scale for these fluctuations, which sets a definite length scale for band gap and potential fluctuations. At Σ3 grain boundaries, we find no evidence of composition variation compared to the bulk. The finding highlights such variations reported at grain boundaries in polycrystalline thin‐films are direct consequences of processingmore » methods and not intrinsic properties of CZTS itself.« less

Authors:
 [1];  [2];  [3];  [4];  [5];  [1];  [1];  [6]
  1. National Renewable Energy Laboratory Golden CO 80401 USA
  2. Department of Electrical and Computer Engineering University of Utah UT 84112 USA
  3. Department of Materials Science and Engineering University of Utah UT 84112 USA
  4. Department of Materials Science and Engineering University of Utah UT 84112 USA, Department of Applied Physics and Electronic Engineering University of Miyazaki Miyazaki 889 2192 Japan
  5. Department of Applied Physics and Electronic Engineering University of Miyazaki Miyazaki 889 2192 Japan
  6. Department of Electrical and Computer Engineering University of Utah UT 84112 USA, Department of Materials Science and Engineering University of Utah UT 84112 USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1400554
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physica Status Solidi. A, Applications and Materials Science
Additional Journal Information:
Journal Name: Physica Status Solidi. A, Applications and Materials Science Journal Volume: 213 Journal Issue: 9; Journal ID: ISSN 1862-6300
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Aguiar, Jeffery A., Erkan, Mehmet E., Pruzan, Dennis S., Nagaoka, Akira, Yoshino, Kenji, Moutinho, Helio, Al‐Jassim, Mowafak, and Scarpulla, Michael A. Cation ratio fluctuations in Cu 2 ZnSnS 4 at the 20 nm length scale investigated by analytical electron microscopy. Germany: N. p., 2016. Web. doi:10.1002/pssa.201600060.
Aguiar, Jeffery A., Erkan, Mehmet E., Pruzan, Dennis S., Nagaoka, Akira, Yoshino, Kenji, Moutinho, Helio, Al‐Jassim, Mowafak, & Scarpulla, Michael A. Cation ratio fluctuations in Cu 2 ZnSnS 4 at the 20 nm length scale investigated by analytical electron microscopy. Germany. https://doi.org/10.1002/pssa.201600060
Aguiar, Jeffery A., Erkan, Mehmet E., Pruzan, Dennis S., Nagaoka, Akira, Yoshino, Kenji, Moutinho, Helio, Al‐Jassim, Mowafak, and Scarpulla, Michael A. Tue . "Cation ratio fluctuations in Cu 2 ZnSnS 4 at the 20 nm length scale investigated by analytical electron microscopy". Germany. https://doi.org/10.1002/pssa.201600060.
@article{osti_1400554,
title = {Cation ratio fluctuations in Cu 2 ZnSnS 4 at the 20 nm length scale investigated by analytical electron microscopy},
author = {Aguiar, Jeffery A. and Erkan, Mehmet E. and Pruzan, Dennis S. and Nagaoka, Akira and Yoshino, Kenji and Moutinho, Helio and Al‐Jassim, Mowafak and Scarpulla, Michael A.},
abstractNote = {Kesterite Cu 2 ZnSn(S,Se) 4 (CZTSSe) is a sustainable material for thin‐film photovoltaics with device efficiencies greater than 12% have been demonstrated. Despite similar crystal structure and polycrystalline film microstructures, there is widespread evidence for larger‐amplitude potential and bandgap fluctuations in CZTS than in the analogous Cu(In,Ga)Se 2 (CIGSe) chalcopyrite material. This disorder is believed to account for a sizable part of the larger open‐circuit voltage ( V OC ) deficit in CZTS devices, yet the detailed origins and length scales of these fluctuations have not been fully elucidated. Herein, we present a transmission electron microscopy study focusing on composition variation within bulk multicrystals of CZTS grown by the travelling heater method (THM). In these slow‐cooled, solution grown crystals we find direct evidence for spatial composition fluctuations of amplitude <1 at.% (∼5 × 10 20  cm −3 ) and thus, explainable by point defects. However, rather than being homogeneously‐distributed we find a characteristic 20 nm length scale for these fluctuations, which sets a definite length scale for band gap and potential fluctuations. At Σ3 grain boundaries, we find no evidence of composition variation compared to the bulk. The finding highlights such variations reported at grain boundaries in polycrystalline thin‐films are direct consequences of processing methods and not intrinsic properties of CZTS itself.},
doi = {10.1002/pssa.201600060},
journal = {Physica Status Solidi. A, Applications and Materials Science},
number = 9,
volume = 213,
place = {Germany},
year = {Tue Apr 05 00:00:00 EDT 2016},
month = {Tue Apr 05 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
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https://doi.org/10.1002/pssa.201600060

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Cited by: 11 works
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Works referenced in this record:

A low-temperature order-disorder transition in Cu 2 ZnSnS 4 thin films
journal, January 2014

  • Scragg, Jonathan J. S.; Choubrac, Léo; Lafond, Alain
  • Applied Physics Letters, Vol. 104, Issue 4
  • DOI: 10.1063/1.4863685

Electrically Benign Behavior of Grain Boundaries in Polycrystalline CuInSe 2 Films
journal, December 2007


Transmission Electron Microscopy
book, January 2009


How grain boundaries in Cu(In,Ga)Se 2 thin films are charged: Revisit
journal, July 2012

  • Jiang, C. -S.; Contreras, M. A.; Repins, I.
  • Applied Physics Letters, Vol. 101, Issue 3
  • DOI: 10.1063/1.4737406

Enhanced Conversion Efficiencies of Cu 2 ZnSnS 4 -Based Thin Film Solar Cells by Using Preferential Etching Technique
journal, April 2008

  • Katagiri, Hironori; Jimbo, Kazuo; Yamada, Satoru
  • Applied Physics Express, Vol. 1
  • DOI: 10.1143/APEX.1.041201

Engineering Grain Boundaries in Cu 2 ZnSnSe 4 for Better Cell Performance: A First-Principle Study
journal, August 2013

  • Yin, Wan-Jian; Wu, Yelong; Wei, Su-Huai
  • Advanced Energy Materials, Vol. 4, Issue 1
  • DOI: 10.1002/aenm.201300712

Structural and elemental characterization of high efficiency Cu2ZnSnS4 solar cells
journal, January 2011

  • Wang, Kejia; Shin, Byungha; Reuter, Kathleen B.
  • Applied Physics Letters, Vol. 98, Issue 5
  • DOI: 10.1063/1.3543621

Thermally evaporated Cu2ZnSnS4 solar cells
journal, October 2010

  • Wang, K.; Gunawan, O.; Todorov, T.
  • Applied Physics Letters, Vol. 97, Issue 14
  • DOI: 10.1063/1.3499284

New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%
journal, January 2011

  • Jackson, Philip; Hariskos, Dimitrios; Lotter, Erwin
  • Progress in Photovoltaics: Research and Applications, Vol. 19, Issue 7
  • DOI: 10.1002/pip.1078

The crystal structure of kesterite type compounds: A neutron and X-ray diffraction study
journal, June 2011


Growth of Cu2ZnSnS4 Single Crystal by Traveling Heater Method
journal, November 2011

  • Nagaoka, Akira; Yoshino, Kenji; Taniguchi, Hiroki
  • Japanese Journal of Applied Physics, Vol. 50, Issue 12R
  • DOI: 10.1143/JJAP.50.128001

Development of CZTS-based thin film solar cells
journal, February 2009

  • Katagiri, Hironori; Jimbo, Kazuo; Maw, Win Shwe
  • Thin Solid Films, Vol. 517, Issue 7, p. 2455-2460
  • DOI: 10.1016/j.tsf.2008.11.002

Contrasting the Material Chemistry of Cu 2 ZnSnSe 4 and Cu 2 ZnSnS (4- x ) Se x
journal, February 2016

  • Aguiar, Jeffery A.; Patel, Maulik; Aoki, Toshihiro
  • Advanced Science, Vol. 3, Issue 6
  • DOI: 10.1002/advs.201500320

Evidence for a Neutral Grain-Boundary Barrier in Chalcopyrites
journal, October 2006


A neutron diffraction study of the stannite-kesterite solid solution series [A neutron diffraction study of the stannite-kesterite solid solution series]
journal, February 2007


Synthesis of Cu 2 ZnSnS 4 Nanocrystal Ink and Its Use for Solar Cells
journal, August 2009

  • Guo, Qijie; Hillhouse, Hugh W.; Agrawal, Rakesh
  • Journal of the American Chemical Society, Vol. 131, Issue 33
  • DOI: 10.1021/ja904981r

Phase equilibria in the Cu2S–ZnS–SnS2 system
journal, April 2004


Effects of sodium on electrical properties in Cu 2 ZnSnS 4 single crystal
journal, April 2014

  • Nagaoka, Akira; Miyake, Hideto; Taniyama, Tomoyasu
  • Applied Physics Letters, Vol. 104, Issue 15
  • DOI: 10.1063/1.4871208

Multiwavelength excitation Raman scattering study of polycrystalline kesterite Cu 2 ZnSnS 4 thin films
journal, January 2014

  • Dimitrievska, M.; Fairbrother, A.; Fontané, X.
  • Applied Physics Letters, Vol. 104, Issue 2
  • DOI: 10.1063/1.4861593

Defect physics of the CuInSe 2 chalcopyrite semiconductor
journal, April 1998


Epitaxial growth of CZTS on Si substrates investigated with electron backscatter diffraction
conference, June 2014

  • Moutinho, H. R.; Young, M.; Harvey, S.
  • 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC), 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)
  • DOI: 10.1109/PVSC.2014.6925405

Device characteristics of a 10.1% hydrazine-processed Cu2ZnSn(Se,S)4 solar cell: Characteristics of a 10.1% efficient kesterite solar cell
journal, September 2011

  • Barkhouse, D. Aaron R.; Gunawan, Oki; Gokmen, Tayfun
  • Progress in Photovoltaics: Research and Applications, Vol. 20, Issue 1
  • DOI: 10.1002/pip.1160

Preparation of Cu2ZnSnS4 single crystals from Sn solutions
journal, February 2012


Chemical Insights into the Instability of Cu 2 ZnSnS 4 Films during Annealing
journal, October 2011

  • Scragg, Jonathan J.; Ericson, Tove; Kubart, Tomas
  • Chemistry of Materials, Vol. 23, Issue 20
  • DOI: 10.1021/cm202379s

Interplay between surface preparation and device performance in CZTSSe solar cells: Effects of KCN and NH4OH etching
journal, May 2015


Symmetry-dependence of electronic grain boundary properties in polycrystalline CuInSe 2 thin films
journal, October 2011

  • Baier, Robert; Abou-Ras, Daniel; Rissom, Thorsten
  • Applied Physics Letters, Vol. 99, Issue 17
  • DOI: 10.1063/1.3652915

Growth of Cu2ZnSnSe4 single crystals from Sn solutions
journal, September 2012


Chemical etching of Cu2ZnSn(S,Se)4 monograin powder
conference, June 2010

  • Timmo, K.; Altosaar, M.; Raudoja, J.
  • 2010 35th IEEE Photovoltaic Specialists Conference (PVSC)
  • DOI: 10.1109/PVSC.2010.5616411

Strategic review of secondary phases, defects and defect-complexes in kesterite CZTS–Se solar cells
journal, January 2015

  • Kumar, Mukesh; Dubey, Ashish; Adhikari, Nirmal
  • Energy & Environmental Science, Vol. 8, Issue 11
  • DOI: 10.1039/C5EE02153G

Kesterites-a challenging material for solar cells: Kesterites-a challenging material for solar cells
journal, February 2012

  • Siebentritt, Susanne; Schorr, Susan
  • Progress in Photovoltaics: Research and Applications, Vol. 20, Issue 5
  • DOI: 10.1002/pip.2156

High-resolution work function imaging of single grains of semiconductor surfaces
journal, April 2002

  • Sadewasser, S.; Glatzel, Th.; Rusu, M.
  • Applied Physics Letters, Vol. 80, Issue 16
  • DOI: 10.1063/1.1471375

Direct observation of Cu, Zn cation disorder in Cu 2 ZnSnS 4 solar cell absorber material using aberration corrected scanning transmission electron microscopy : Aberration corrected STEM in Cu, Zn cation disorder in CZTS
journal, September 2012

  • Mendis, Budhika G.; Shannon, Mervyn D.; Goodman, Max CJ
  • Progress in Photovoltaics: Research and Applications, Vol. 22, Issue 1
  • DOI: 10.1002/pip.2279

Entropy-Driven Clustering in Tetrahedrally Bonded Multinary Materials
journal, March 2015


Thermodynamic Aspects of the Synthesis of Thin-Film Materials for Solar Cells
journal, April 2012

  • Scragg, Jonathan J.; Dale, Phillip J.; Colombara, Diego
  • ChemPhysChem, Vol. 13, Issue 12
  • DOI: 10.1002/cphc.201200067

Band tailing and efficiency limitation in kesterite solar cells
journal, September 2013

  • Gokmen, Tayfun; Gunawan, Oki; Todorov, Teodor K.
  • Applied Physics Letters, Vol. 103, Issue 10
  • DOI: 10.1063/1.4820250

Classification of Lattice Defects in the Kesterite Cu 2 ZnSnS 4 and Cu 2 ZnSnSe 4 Earth-Abundant Solar Cell Absorbers
journal, February 2013


Defect formation and phase stability of Cu 2 ZnSnS 4 photovoltaic material
journal, March 2010


Growth and Raman scattering characterization of Cu2ZnSnS4 thin films
journal, February 2009


The path towards a high-performance solution-processed kesterite solar cell
journal, June 2011

  • Mitzi, David B.; Gunawan, Oki; Todorov, Teodor K.
  • Solar Energy Materials and Solar Cells, Vol. 95, Issue 6, p. 1421-1436
  • DOI: 10.1016/j.solmat.2010.11.028

Cu-Zn disorder and band gap fluctuations in Cu 2 ZnSn(S,Se) 4 : Theoretical and experimental investigations (Phys. Status Solidi B 2/2016)
journal, February 2016

  • Scragg, Jonathan J. S.; Larsen, Jes K.; Kumar, Mukesh
  • physica status solidi (b), Vol. 253, Issue 2
  • DOI: 10.1002/pssb.201670508