AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers

Ren, Fan; Pearton, Stephen J.; Ahn, Shihyun; Lin, Yi-Hsuan; Machuca, Francisco; Weiss, Robert; Welsh, Alex; McCartney, Martha R.; Smith, David J.; Kravchenko, Ivan I.

doi:10.1149/2.0161711jss

Title: AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers

Abstract

AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated for structures grown on ZrTi metallic alloy buffer layers, which provided lattice matching of the in-plane lattice parameter (“a-parameter”) to hexagonal GaN. The quality of the GaN buffer layer and HEMT structure were confirmed with X-ray 2θ and rocking scans as well as cross-section transmission electron microscopy (TEM) images. The X-ray 2θ scans showed full widths at half maximum (FWHM) of 0.06°, 0.05° and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM of the lower section of the HEMT structure containing the GaN buffer layer and the AlN/ZrTi/AlN stack on the Si substrate showed that it was important to grow AlN on the top of ZrTi prior to growing the GaN buffer layer. Finally, the estimated threading dislocation (TD) density in the GaN channel layer of the HEMT structure was in the 10⁸ cm^-2 range.

Authors:

Ren, Fan ^[1]; Pearton, Stephen J. ^[2]; Ahn, Shihyun ^[1]; Lin, Yi-Hsuan ^[1]; Machuca, Francisco ^[3]; Weiss, Robert ^[3]; Welsh, Alex ^[3]; McCartney, Martha R. ^[4]; Smith, David J. ^[4]; Kravchenko, Ivan I. ^[5]

Univ. of Florida, Gainesville, FL (United States). Dept. of Chemical Engineering
Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science Engineering
Tivra Corporation, Oakland, CA (United States)
Tivra Corporation, Oakland, CA (United States); Arizona State Univ., Tempe, AZ (United States). Dept. of Physics
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)

Publication Date:: Tue Sep 26 00:00:00 EDT 2017

Research Org.:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Org.:: USDOE Office of Science (SC)

OSTI Identifier:: 1399403

Grant/Contract Number:: AC05-00OR22725; FA8650-15-M-1912; HC1047-05-D4005

Resource Type:: Accepted Manuscript

Journal Name:: ECS Journal of Solid State Science and Technology

Additional Journal Information:: Journal Volume: 6; Journal Issue: 11; Journal ID: ISSN 2162-8769

Publisher:: Electrochemical Society

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats


                    Ren, Fan, Pearton, Stephen J., Ahn, Shihyun, Lin, Yi-Hsuan, Machuca, Francisco, Weiss, Robert, Welsh, Alex, McCartney, Martha R., Smith, David J., and Kravchenko, Ivan I. AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers.  United States: N. p., 2017. 
Web.  doi:10.1149/2.0161711jss.

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                    Ren, Fan, Pearton, Stephen J., Ahn, Shihyun, Lin, Yi-Hsuan, Machuca, Francisco, Weiss, Robert, Welsh, Alex, McCartney, Martha R., Smith, David J., & Kravchenko, Ivan I. AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers.  United States.  https://doi.org/10.1149/2.0161711jss

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                    Ren, Fan, Pearton, Stephen J., Ahn, Shihyun, Lin, Yi-Hsuan, Machuca, Francisco, Weiss, Robert, Welsh, Alex, McCartney, Martha R., Smith, David J., and Kravchenko, Ivan I. Tue .  
"AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers".  United States.  https://doi.org/10.1149/2.0161711jss.  https://www.osti.gov/servlets/purl/1399403.

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@article{osti_1399403,

  title        = {AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers},

  author       = {Ren, Fan and Pearton, Stephen J. and Ahn, Shihyun and Lin, Yi-Hsuan and Machuca, Francisco and Weiss, Robert and Welsh, Alex and McCartney, Martha R. and Smith, David J. and Kravchenko, Ivan I.},

  abstractNote = {AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated for structures grown on ZrTi metallic alloy buffer layers, which provided lattice matching of the in-plane lattice parameter (“a-parameter”) to hexagonal GaN. The quality of the GaN buffer layer and HEMT structure were confirmed with X-ray 2θ and rocking scans as well as cross-section transmission electron microscopy (TEM) images. The X-ray 2θ scans showed full widths at half maximum (FWHM) of 0.06°, 0.05° and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM of the lower section of the HEMT structure containing the GaN buffer layer and the AlN/ZrTi/AlN stack on the Si substrate showed that it was important to grow AlN on the top of ZrTi prior to growing the GaN buffer layer. Finally, the estimated threading dislocation (TD) density in the GaN channel layer of the HEMT structure was in the 108 cm-2 range.},

  doi          = {10.1149/2.0161711jss},

  journal      = {ECS Journal of Solid State Science and Technology},

  number       = 11,

  volume       = 6,

  place        = {United States},

  year         = {Tue Sep 26 00:00:00 EDT 2017},

  month        = {Tue Sep 26 00:00:00 EDT 2017}

}

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Works referenced in this record:

Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE
journal, December 2001

Johnson, J. W.; Baca, A. G.; Briggs, R. D.
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AlGaN/GaN High Electron Mobility Transistors Grown on 150 mm Si(111) Substrates with High Uniformity
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Cheng, Kai; Leys, Maarten; Degroote, Stefan
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Wu, Y. -F.; Saxler, A.; Moore, M.
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Solid-State Electronics, Vol. 48, Issue 1
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Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates
journal, September 2016

Ren, Fan; Pearton, Stephen J.; Ahn, Shihyun
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 34, Issue 5
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High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE
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journal, January 2009

Sun, H. F.; Alt, A. R.; Benedickter, H.
Electronics Letters, Vol. 45, Issue 7
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GaN: Processing, defects, and devices
journal, July 1999

Pearton, S. J.; Zolper, J. C.; Shul, R. J.
Journal of Applied Physics, Vol. 86, Issue 1, p. 1-78
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Investigation of buffer traps in an AlGaN/GaN/Si high electron mobility transistor by backgating current deep level transient spectroscopy
journal, January 2003

Marso, M.; Wolter, M.; Javorka, P.
Applied Physics Letters, Vol. 82, Issue 4
DOI: 10.1063/1.1540239

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Similar Records

Title: AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers

Abstract

Citation Formats

Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE journal, December 2001

AlGaN/GaN High Electron Mobility Transistors Grown on 150 mm Si(111) Substrates with High Uniformity journal, March 2008

30-W/mm GaN HEMTs by Field Plate Optimization journal, March 2004

Epitaxial Growth of High Quality GaN Films on Lattice Matched Metallic Layers journal, April 2015

RF performance of HVPE-grown AlGaN/GaN HEMTs journal, January 2004

Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates journal, September 2016

High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE journal, January 2000

100 nm gate AlGaN/GaN HEMTs on silicon with fT=90 GHz journal, January 2009

GaN: Processing, defects, and devices journal, July 1999

Investigation of buffer traps in an AlGaN/GaN/Si high electron mobility transistor by backgating current deep level transient spectroscopy journal, January 2003

Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE
journal, December 2001

AlGaN/GaN High Electron Mobility Transistors Grown on 150 mm Si(111) Substrates with High Uniformity
journal, March 2008

30-W/mm GaN HEMTs by Field Plate Optimization
journal, March 2004

Epitaxial Growth of High Quality GaN Films on Lattice Matched Metallic Layers
journal, April 2015

RF performance of HVPE-grown AlGaN/GaN HEMTs
journal, January 2004

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journal, September 2016

High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE
journal, January 2000

100 nm gate AlGaN/GaN HEMTs on silicon with fT=90 GHz
journal, January 2009

GaN: Processing, defects, and devices
journal, July 1999

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journal, January 2003