Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; Kravchenko, I. I.; Zhang, Ming-Lan

doi:10.1116/1.4918715

Title: Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

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Abstract

Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 10⁹ and 5 × 10⁸ cm^₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersion observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.

Authors:

Ahn, Shihyun ^[1]; Zhu, Weidi ^[1]; Dong, Chen ^[1]; Le, Lingcong ^[1]; Hwang, Ya-Hsi ^[1]; Kim, Byung-Jae ^[1]; Ren, Fan ^[1]; Pearton, Stephen J. ^[2]; Lind, Aaron G. ^[2]; Jones, Kevin S. ^[3]; Kravchenko, I. I. ^[4]; Zhang, Ming-Lan ^[5]

Univ. of Florida, Gainesville, FL (United States). Dept. of Chemical Engineering
Univ. of Florida, Gainesville, FL (United States). Dept. of Material Science and Engineering
Department of Material Science and Engineering, Univ. of Florida, Gainesville, FL (United States). Dept. of Material Science and Engineering
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
Hebei Univ. of Technology, Tianjing (China). Det. of Electronic Science and Technology

Publication Date:: Tue Apr 21 00:00:00 EDT 2015

Research Org.:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Org.:: USDOE Office of Science (SC)

OSTI Identifier:: 1265477

Grant/Contract Number:: AC05-00OR22725; ECCS-1445720; 1-11-1-0020

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics

Additional Journal Information:: Journal Volume: 33; Journal Issue: 3; Journal ID: ISSN 2166-2746

Publisher:: American Vacuum Society/AIP

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Ahn, Shihyun, Zhu, Weidi, Dong, Chen, Le, Lingcong, Hwang, Ya-Hsi, Kim, Byung-Jae, Ren, Fan, Pearton, Stephen J., Lind, Aaron G., Jones, Kevin S., Kravchenko, I. I., and Zhang, Ming-Lan. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors.  United States: N. p., 2015. 
Web.  doi:10.1116/1.4918715.

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                    Ahn, Shihyun, Zhu, Weidi, Dong, Chen, Le, Lingcong, Hwang, Ya-Hsi, Kim, Byung-Jae, Ren, Fan, Pearton, Stephen J., Lind, Aaron G., Jones, Kevin S., Kravchenko, I. I., & Zhang, Ming-Lan. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors.  United States.  https://doi.org/10.1116/1.4918715

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                    Ahn, Shihyun, Zhu, Weidi, Dong, Chen, Le, Lingcong, Hwang, Ya-Hsi, Kim, Byung-Jae, Ren, Fan, Pearton, Stephen J., Lind, Aaron G., Jones, Kevin S., Kravchenko, I. I., and Zhang, Ming-Lan. Tue .  
"Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors".  United States.  https://doi.org/10.1116/1.4918715.  https://www.osti.gov/servlets/purl/1265477.

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@article{osti_1265477,

  title        = {Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors},

  author       = {Ahn, Shihyun and Zhu, Weidi and Dong, Chen and Le, Lingcong and Hwang, Ya-Hsi and Kim, Byung-Jae and Ren, Fan and Pearton, Stephen J. and Lind, Aaron G. and Jones, Kevin S. and Kravchenko, I. I. and Zhang, Ming-Lan},

  abstractNote = {Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersion observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.},

  doi          = {10.1116/1.4918715},

  journal      = {Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics},

  number       = 3,

  volume       = 33,

  place        = {United States},

  year         = {Tue Apr 21 00:00:00 EDT 2015},

  month        = {Tue Apr 21 00:00:00 EDT 2015}

}

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