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Title: Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor Nanowires

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1393730
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Name: Physical Review Letters Journal Volume: 119 Journal Issue: 12; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Luo, Jun-Wei, Li, Shu-Shen, and Zunger, Alex. Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor Nanowires. United States: N. p., 2017. Web. doi:10.1103/PhysRevLett.119.126401.
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Luo, Jun-Wei, Li, Shu-Shen, & Zunger, Alex. Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor Nanowires. United States. https://doi.org/10.1103/PhysRevLett.119.126401
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Luo, Jun-Wei, Li, Shu-Shen, and Zunger, Alex. Thu . "Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor Nanowires". United States. https://doi.org/10.1103/PhysRevLett.119.126401.
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@article{osti_1393730,
title = {Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor Nanowires},
author = {Luo, Jun-Wei and Li, Shu-Shen and Zunger, Alex},
abstractNote = {},
doi = {10.1103/PhysRevLett.119.126401},
journal = {Physical Review Letters},
number = 12,
volume = 119,
place = {United States},
year = {Thu Sep 21 00:00:00 EDT 2017},
month = {Thu Sep 21 00:00:00 EDT 2017}
}
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Journal Article:
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https://doi.org/10.1103/PhysRevLett.119.126401
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