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Title: Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor Nanowires

Authors:
; ;
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 119; Journal Issue: 12; Related Information: CHORUS Timestamp: 2017-09-21 15:55:04; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1393730

Luo, Jun-Wei, Li, Shu-Shen, and Zunger, Alex. Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor Nanowires. United States: N. p., Web. doi:10.1103/PhysRevLett.119.126401.
Luo, Jun-Wei, Li, Shu-Shen, & Zunger, Alex. Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor Nanowires. United States. doi:10.1103/PhysRevLett.119.126401.
Luo, Jun-Wei, Li, Shu-Shen, and Zunger, Alex. 2017. "Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor Nanowires". United States. doi:10.1103/PhysRevLett.119.126401.
@article{osti_1393730,
title = {Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor Nanowires},
author = {Luo, Jun-Wei and Li, Shu-Shen and Zunger, Alex},
abstractNote = {},
doi = {10.1103/PhysRevLett.119.126401},
journal = {Physical Review Letters},
number = 12,
volume = 119,
place = {United States},
year = {2017},
month = {9}
}