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Title: Spectral hole-burning and gain saturation in semiconductor lasers: Strong-signal theory

Abstract

The nonlinear susceptibility of semiconductor gain media is obtained by including the effect of intraband carrier relaxation within the density-matrix formalism. The result is used to obtain the approximate analytic expressions showing how the optical gain and the refractive index change with an increase in the laser power. The index change is generally small but can be positive or negative depending on which side of the gain peak the lasing mode is located. By contrast, the gain is always reduced because of spectral hole-burning. The implications of gain saturation on the dynamic response of semiconductor lasers are discussed together with the possibility of experimental verification.

Authors:
Publication Date:
Research Org.:
ATandT Bell Laboratories, Murray Hill, New Jersey 07974
OSTI Identifier:
5525560
Resource Type:
Journal Article
Journal Name:
J. Appl. Phys.; (United States)
Additional Journal Information:
Journal Volume: 63:4
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SEMICONDUCTOR LASERS; GAIN; MATHEMATICAL MODELS; POWER; REFRACTIVITY; THEORETICAL DATA; AMPLIFICATION; DATA; INFORMATION; LASERS; NUMERICAL DATA; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; 420300* - Engineering- Lasers- (-1989)

Citation Formats

Agrawal, G P. Spectral hole-burning and gain saturation in semiconductor lasers: Strong-signal theory. United States: N. p., 1988. Web. doi:10.1063/1.339990.
Agrawal, G P. Spectral hole-burning and gain saturation in semiconductor lasers: Strong-signal theory. United States. https://doi.org/10.1063/1.339990
Agrawal, G P. 1988. "Spectral hole-burning and gain saturation in semiconductor lasers: Strong-signal theory". United States. https://doi.org/10.1063/1.339990.
@article{osti_5525560,
title = {Spectral hole-burning and gain saturation in semiconductor lasers: Strong-signal theory},
author = {Agrawal, G P},
abstractNote = {The nonlinear susceptibility of semiconductor gain media is obtained by including the effect of intraband carrier relaxation within the density-matrix formalism. The result is used to obtain the approximate analytic expressions showing how the optical gain and the refractive index change with an increase in the laser power. The index change is generally small but can be positive or negative depending on which side of the gain peak the lasing mode is located. By contrast, the gain is always reduced because of spectral hole-burning. The implications of gain saturation on the dynamic response of semiconductor lasers are discussed together with the possibility of experimental verification.},
doi = {10.1063/1.339990},
url = {https://www.osti.gov/biblio/5525560}, journal = {J. Appl. Phys.; (United States)},
number = ,
volume = 63:4,
place = {United States},
year = {Mon Feb 15 00:00:00 EST 1988},
month = {Mon Feb 15 00:00:00 EST 1988}
}