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Title: High Photoluminescence Quantum Yield in Band Gap Tunable Bromide Containing Mixed Halide Perovskites

Hybrid organic-inorganic halide perovskite based semiconductor materials are attractive for use in a wide range of optoelectronic devices because they combine the advantages of suitable optoelectronic attributes and simultaneously low-cost solution processability. Here, we present a two-step low-pressure vapor-assisted solution process to grow high quality homogeneous CH 3NH 3PbI 3-xBr x perovskite films over the full band gap range of 1.6-2.3 eV. Photoluminescence light-in versus light-out characterization techniques are used to provide new insights into the optoelectronic properties of Br-containing hybrid organic-inorganic perovskites as a function of optical carrier injection by employing pump-powers over a 6 orders of magnitude dynamic range. The internal luminescence quantum yield of wide band gap perovskites reaches impressive values up to 30%. This high quantum yield translates into substantial quasi-Fermi level splitting and high "luminescence or optically implied" open-circuit voltage. Most importantly, both attributes, high internal quantum yield and high optically implied open-circuit voltage, are demonstrated over the entire band gap range (1.6 eV ≤ E g ≤ 2.3 eV). These results establish the versatility of Br-containing perovskite semiconductors for a variety of applications and especially for the use as high-quality top cell in tandem photovoltaic devices in combination with industry dominant Si bottom cells.more » (Figure Presented).« less
Authors:
 [1] ;  [2] ;  [1] ;  [1] ;  [2] ;  [1] ;  [2] ;  [1]
  1. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Publication Date:
Grant/Contract Number:
AC02-05CH11231
Type:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 16; Journal Issue: 1; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Research Org:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1393011

Sutter-Fella, Carolin M., Li, Yanbo, Amani, Matin, Ager, Joel W., Toma, Francesca M., Yablonovitch, Eli, Sharp, Ian D., and Javey, Ali. High Photoluminescence Quantum Yield in Band Gap Tunable Bromide Containing Mixed Halide Perovskites. United States: N. p., Web. doi:10.1021/acs.nanolett.5b04884.
Sutter-Fella, Carolin M., Li, Yanbo, Amani, Matin, Ager, Joel W., Toma, Francesca M., Yablonovitch, Eli, Sharp, Ian D., & Javey, Ali. High Photoluminescence Quantum Yield in Band Gap Tunable Bromide Containing Mixed Halide Perovskites. United States. doi:10.1021/acs.nanolett.5b04884.
Sutter-Fella, Carolin M., Li, Yanbo, Amani, Matin, Ager, Joel W., Toma, Francesca M., Yablonovitch, Eli, Sharp, Ian D., and Javey, Ali. 2015. "High Photoluminescence Quantum Yield in Band Gap Tunable Bromide Containing Mixed Halide Perovskites". United States. doi:10.1021/acs.nanolett.5b04884. https://www.osti.gov/servlets/purl/1393011.
@article{osti_1393011,
title = {High Photoluminescence Quantum Yield in Band Gap Tunable Bromide Containing Mixed Halide Perovskites},
author = {Sutter-Fella, Carolin M. and Li, Yanbo and Amani, Matin and Ager, Joel W. and Toma, Francesca M. and Yablonovitch, Eli and Sharp, Ian D. and Javey, Ali},
abstractNote = {Hybrid organic-inorganic halide perovskite based semiconductor materials are attractive for use in a wide range of optoelectronic devices because they combine the advantages of suitable optoelectronic attributes and simultaneously low-cost solution processability. Here, we present a two-step low-pressure vapor-assisted solution process to grow high quality homogeneous CH3NH3PbI3-xBrx perovskite films over the full band gap range of 1.6-2.3 eV. Photoluminescence light-in versus light-out characterization techniques are used to provide new insights into the optoelectronic properties of Br-containing hybrid organic-inorganic perovskites as a function of optical carrier injection by employing pump-powers over a 6 orders of magnitude dynamic range. The internal luminescence quantum yield of wide band gap perovskites reaches impressive values up to 30%. This high quantum yield translates into substantial quasi-Fermi level splitting and high "luminescence or optically implied" open-circuit voltage. Most importantly, both attributes, high internal quantum yield and high optically implied open-circuit voltage, are demonstrated over the entire band gap range (1.6 eV ≤ Eg ≤ 2.3 eV). These results establish the versatility of Br-containing perovskite semiconductors for a variety of applications and especially for the use as high-quality top cell in tandem photovoltaic devices in combination with industry dominant Si bottom cells. (Figure Presented).},
doi = {10.1021/acs.nanolett.5b04884},
journal = {Nano Letters},
number = 1,
volume = 16,
place = {United States},
year = {2015},
month = {12}
}