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Title: High Photoluminescence Quantum Yield in Band Gap Tunable Bromide Containing Mixed Halide Perovskites

Abstract

Hybrid organic-inorganic halide perovskite based semiconductor materials are attractive for use in a wide range of optoelectronic devices because they combine the advantages of suitable optoelectronic attributes and simultaneously low-cost solution processability. Here, we present a two-step low-pressure vapor-assisted solution process to grow high quality homogeneous CH3NH3PbI3-xBrx perovskite films over the full band gap range of 1.6-2.3 eV. Photoluminescence light-in versus light-out characterization techniques are used to provide new insights into the optoelectronic properties of Br-containing hybrid organic-inorganic perovskites as a function of optical carrier injection by employing pump-powers over a 6 orders of magnitude dynamic range. The internal luminescence quantum yield of wide band gap perovskites reaches impressive values up to 30%. This high quantum yield translates into substantial quasi-Fermi level splitting and high "luminescence or optically implied" open-circuit voltage. Most importantly, both attributes, high internal quantum yield and high optically implied open-circuit voltage, are demonstrated over the entire band gap range (1.6 eV ≤ Eg ≤ 2.3 eV). These results establish the versatility of Br-containing perovskite semiconductors for a variety of applications and especially for the use as high-quality top cell in tandem photovoltaic devices in combination with industry dominant Si bottom cells. (Figure Presented).

Authors:
 [1];  [2];  [1];  [1];  [2];  [1];  [2];  [1]
+ Show Author Affiliations
  1. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1393011
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 16; Journal Issue: 1; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Sutter-Fella, Carolin M., Li, Yanbo, Amani, Matin, Ager, Joel W., Toma, Francesca M., Yablonovitch, Eli, Sharp, Ian D., and Javey, Ali. High Photoluminescence Quantum Yield in Band Gap Tunable Bromide Containing Mixed Halide Perovskites. United States: N. p., 2015. Web. doi:10.1021/acs.nanolett.5b04884.
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Sutter-Fella, Carolin M., Li, Yanbo, Amani, Matin, Ager, Joel W., Toma, Francesca M., Yablonovitch, Eli, Sharp, Ian D., & Javey, Ali. High Photoluminescence Quantum Yield in Band Gap Tunable Bromide Containing Mixed Halide Perovskites. United States. https://doi.org/10.1021/acs.nanolett.5b04884
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Sutter-Fella, Carolin M., Li, Yanbo, Amani, Matin, Ager, Joel W., Toma, Francesca M., Yablonovitch, Eli, Sharp, Ian D., and Javey, Ali. Mon . "High Photoluminescence Quantum Yield in Band Gap Tunable Bromide Containing Mixed Halide Perovskites". United States. https://doi.org/10.1021/acs.nanolett.5b04884. https://www.osti.gov/servlets/purl/1393011.
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@article{osti_1393011,
title = {High Photoluminescence Quantum Yield in Band Gap Tunable Bromide Containing Mixed Halide Perovskites},
author = {Sutter-Fella, Carolin M. and Li, Yanbo and Amani, Matin and Ager, Joel W. and Toma, Francesca M. and Yablonovitch, Eli and Sharp, Ian D. and Javey, Ali},
abstractNote = {Hybrid organic-inorganic halide perovskite based semiconductor materials are attractive for use in a wide range of optoelectronic devices because they combine the advantages of suitable optoelectronic attributes and simultaneously low-cost solution processability. Here, we present a two-step low-pressure vapor-assisted solution process to grow high quality homogeneous CH3NH3PbI3-xBrx perovskite films over the full band gap range of 1.6-2.3 eV. Photoluminescence light-in versus light-out characterization techniques are used to provide new insights into the optoelectronic properties of Br-containing hybrid organic-inorganic perovskites as a function of optical carrier injection by employing pump-powers over a 6 orders of magnitude dynamic range. The internal luminescence quantum yield of wide band gap perovskites reaches impressive values up to 30%. This high quantum yield translates into substantial quasi-Fermi level splitting and high "luminescence or optically implied" open-circuit voltage. Most importantly, both attributes, high internal quantum yield and high optically implied open-circuit voltage, are demonstrated over the entire band gap range (1.6 eV ≤ Eg ≤ 2.3 eV). These results establish the versatility of Br-containing perovskite semiconductors for a variety of applications and especially for the use as high-quality top cell in tandem photovoltaic devices in combination with industry dominant Si bottom cells. (Figure Presented).},
doi = {10.1021/acs.nanolett.5b04884},
journal = {Nano Letters},
number = 1,
volume = 16,
place = {United States},
year = {Mon Dec 21 00:00:00 EST 2015},
month = {Mon Dec 21 00:00:00 EST 2015}
}
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https://doi.org/10.1021/acs.nanolett.5b04884
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    • University of Wuppertal
    • DOI: 10.25926/emvc-jr58

    Quantification of re-Absorption and re-emission processes to determine photon recycling efficiency in perovskite single crystals
    text, January 2017

    • Q., Dong,; H., Wei,; Y., Fang,
    • The University of North Carolina at Chapel Hill University Libraries
    • DOI: 10.17615/57bk-3140

    A Highly Emissive Surface Layer in Mixed-Halide Multication Perovskites.
    text, January 2019

    • Andaji-Garmaroudi, Zahra; Abdi-Jalebi, Mojtaba; Guo, Dengyang
    • Apollo - University of Cambridge Repository
    • DOI: 10.17863/cam.43272

    Temperature-dependent studies of exciton binding energy and phase-transition suppression in (Cs,FA,MA)Pb(I,Br)$_{3}$ perovskites
    text, January 2019

    • Ruf, Fabian; Aygüler, Meltem F.; Giesbrecht, Nadja
    • American Institute of Physics (AIP)
    • DOI: 10.5445/ir/1000093765

    Anion Distribution, Structural Distortion, and Symmetry-Driven Optical Band Gap Bowing in Mixed Halide Cs 2 SnX 6 Vacancy Ordered Double Perovskites
    journal, November 2019

    Perovskite Nanowire Extrusion
    journal, October 2017

    Defective TiO2 with high photoconductive gain for efficient and stable planar heterojunction perovskite solar cells
    journal, August 2016

    • Li, Yanbo; Cooper, Jason K.; Liu, Wenjun
    • Nature Communications, Vol. 7, Issue 1
    • DOI: 10.1038/ncomms12446

    Quantification of re-absorption and re-emission processes to determine photon recycling efficiency in perovskite single crystals
    journal, February 2017

    • Fang, Yanjun; Wei, Haotong; Dong, Qingfeng
    • Nature Communications, Vol. 8, Issue 1
    • DOI: 10.1038/ncomms14417

    Microscopic insight into non-radiative decay in perovskite semiconductors from temperature-dependent luminescence blinking
    journal, April 2019

    Methodologies for high efficiency perovskite solar cells
    journal, June 2016

    Dedoping of Lead Halide Perovskites Incorporating Monovalent Cations.
    journalarticle, January 2018

    • Abdi-Jalebi, Mojtaba; Pazoki, Meysam; Philippe, Bertrand
    • American Chemical Society (ACS)
    • DOI: 10.17863/cam.25141

    X-ray Scintillation in Lead Halide Perovskite Crystals
    text, January 2016

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