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Title: Single-Crystal Thin Films of Cesium Lead Bromide Perovskite Epitaxially Grown on Metal Oxide Perovskite (SrTiO 3)

High-quality metal halide perovskite single crystals have low defect densities and excellent photophysical properties, yet thin films are the most sought after material geometry for optoelectronic devices. Perovskite single-crystal thin films (SCTFs) would be highly desirable for high-performance devices, but their growth remains challenging, particularly for inorganic metal halide perovskites. Herein, we report the facile vapor-phase epitaxial growth of cesium lead bromide perovskite (CsPbBr 3) continuous SCTFs with controllable micrometer thickness, as well as nanoplate arrays, on traditional oxide perovskite SrTiO 3(100) substrates. Heteroepitaxial single-crystal growth is enabled by the serendipitous incommensurate lattice match between these two perovskites, and overcoming the limitation of island-forming Volmer–Weber crystal growth is critical for growing large-area continuous thin films. Time-resolved photoluminescence, transient reflection spectroscopy, and electrical transport measurements show that the CsPbBr 3 epitaxial thin film has a slow charge carrier recombination rate, low surface recombination velocity (10 4 cm s –1), and low defect density of 10 12 cm –3, which are comparable to those of CsPbBr 3 single crystals. This work suggests a general approach using oxide perovskites as substrates for heteroepitaxial growth of halide perovskites. Furthermore, the high-quality halide perovskite SCTFs epitaxially integrated with multifunctional oxide perovskites could open up opportunitiesmore » for a variety of high-performance optoelectronics devices.« less
Authors:
ORCiD logo [1] ; ORCiD logo [2] ; ORCiD logo [2] ;  [3] ;  [2] ;  [2] ; ORCiD logo [2] ;  [2] ;  [3] ;  [2] ;  [2] ;  [4] ; ORCiD logo [4] ; ORCiD logo [3] ;  [2] ; ORCiD logo [2]
  1. Univ. of Wisconsin-Madison, Madison, WI (United States); Xi'an Jiaotong Univ., Shaanxi (People's Republic of China)
  2. Univ. of Wisconsin-Madison, Madison, WI (United States)
  3. Hunan Univ., Changsha (People's Republic of China)
  4. Xi'an Jiaotong Univ., Shaanxi (People's Republic of China)
Publication Date:
Grant/Contract Number:
FG02-09ER46664; SC0002162
Type:
Published Article
Journal Name:
Journal of the American Chemical Society
Additional Journal Information:
Journal Volume: 139; Journal Issue: 38; Journal ID: ISSN 0002-7863
Publisher:
American Chemical Society (ACS)
Research Org:
Univ. of Wisconsin-Madison, Madison, WI (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
OSTI Identifier:
1390338
Alternate Identifier(s):
OSTI ID: 1417657