Elemental Topological Dirac Semimetal: -Sn on InSb(111)
Abstract
Three-dimensional (3D) topological Dirac semimetals (TDSs) are rare but important as a versatile platform for exploring exotic electronic properties and topological phase transitions. A quintessential feature of TDSs is 3D Dirac fermions associated with bulk electronic states near the Fermi level. We have observed such bulk Dirac cones in epitaxially grown α-Sn films on InSb(111), the first such TDS system realized in an elemental form, using angle-resolved photoemission spectroscopy. First-principles calculations confirm that epitaxial strain is key to the formation of the TDS phase. A phase diagram is established that connects the 3D TDS phase through a singular point of a zero-gap semimetal phase to a topological insulator phase. The nature of the Dirac cone crosses over from 3D to 2D as the film thickness is reduced.
- Authors:
-
- Univ. of Illinois, Urbana-Champaign, IL (United States). Dept. of Physics, Frederick Seitz Materials Research Lab.; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source
- Inst. of Atomic and Molecular Sciences, Taipei (Taiwan)
- Univ. of Toronto, ON (Canada). Dept. of Physics
- Univ. of Illinois, Urbana-Champaign, IL (United States). Dept. of Physics, Frederick Seitz Materials Research Lab.; Univ. of Science and Technology, Nanjing (China). College of Science
- European Synchrotron Radiation Facility (ESRF), Grenoble (France). Structure of Materials Group
- Univ. of Illinois, Urbana-Champaign, IL (United States). Dept. of Physics, Frederick Seitz Materials Research Lab.
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source
- Inst. of Atomic and Molecular Sciences, Taipei (Taiwan); Georgia Inst. of Technology, Atlanta, GA (United States). School of Physics; National Taiwan Univ., Taipei (Taiwan). Dept. of Physics
- Univ. of Illinois, Urbana-Champaign, IL (United States). Dept. of Physics, Frederick Seitz Materials Research Lab.; National Taiwan Univ., Taipei (Taiwan). Dept. of Physics
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1379797
- Alternate Identifier(s):
- OSTI ID: 1349973
- Grant/Contract Number:
- AC02-05CH11231; FG02-97ER45632; FG02-07ER46383
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Letters
- Additional Journal Information:
- Journal Volume: 118; Journal Issue: 14; Journal ID: ISSN 0031-9007
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Xu, Cai-Zhi, Chan, Yang-Hao, Chen, Yige, Chen, Peng, Wang, Xiaoxiong, Dejoie, Catherine, Wong, Man-Hong, Hlevyack, Joseph Andrew, Ryu, Hyejin, Kee, Hae-Young, Tamura, Nobumichi, Chou, Mei-Yin, Hussain, Zahid, Mo, Sung-Kwan, and Chiang, Tai-Chang. Elemental Topological Dirac Semimetal: α -Sn on InSb(111). United States: N. p., 2017.
Web. doi:10.1103/PhysRevLett.118.146402.
Xu, Cai-Zhi, Chan, Yang-Hao, Chen, Yige, Chen, Peng, Wang, Xiaoxiong, Dejoie, Catherine, Wong, Man-Hong, Hlevyack, Joseph Andrew, Ryu, Hyejin, Kee, Hae-Young, Tamura, Nobumichi, Chou, Mei-Yin, Hussain, Zahid, Mo, Sung-Kwan, & Chiang, Tai-Chang. Elemental Topological Dirac Semimetal: α -Sn on InSb(111). United States. https://doi.org/10.1103/PhysRevLett.118.146402
Xu, Cai-Zhi, Chan, Yang-Hao, Chen, Yige, Chen, Peng, Wang, Xiaoxiong, Dejoie, Catherine, Wong, Man-Hong, Hlevyack, Joseph Andrew, Ryu, Hyejin, Kee, Hae-Young, Tamura, Nobumichi, Chou, Mei-Yin, Hussain, Zahid, Mo, Sung-Kwan, and Chiang, Tai-Chang. Tue .
"Elemental Topological Dirac Semimetal: α -Sn on InSb(111)". United States. https://doi.org/10.1103/PhysRevLett.118.146402. https://www.osti.gov/servlets/purl/1379797.
@article{osti_1379797,
title = {Elemental Topological Dirac Semimetal: α -Sn on InSb(111)},
author = {Xu, Cai-Zhi and Chan, Yang-Hao and Chen, Yige and Chen, Peng and Wang, Xiaoxiong and Dejoie, Catherine and Wong, Man-Hong and Hlevyack, Joseph Andrew and Ryu, Hyejin and Kee, Hae-Young and Tamura, Nobumichi and Chou, Mei-Yin and Hussain, Zahid and Mo, Sung-Kwan and Chiang, Tai-Chang},
abstractNote = {Three-dimensional (3D) topological Dirac semimetals (TDSs) are rare but important as a versatile platform for exploring exotic electronic properties and topological phase transitions. A quintessential feature of TDSs is 3D Dirac fermions associated with bulk electronic states near the Fermi level. We have observed such bulk Dirac cones in epitaxially grown α-Sn films on InSb(111), the first such TDS system realized in an elemental form, using angle-resolved photoemission spectroscopy. First-principles calculations confirm that epitaxial strain is key to the formation of the TDS phase. A phase diagram is established that connects the 3D TDS phase through a singular point of a zero-gap semimetal phase to a topological insulator phase. The nature of the Dirac cone crosses over from 3D to 2D as the film thickness is reduced.},
doi = {10.1103/PhysRevLett.118.146402},
journal = {Physical Review Letters},
number = 14,
volume = 118,
place = {United States},
year = {Tue Apr 04 00:00:00 EDT 2017},
month = {Tue Apr 04 00:00:00 EDT 2017}
}
Web of Science
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