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Title: Femtosecond laser patterning, synthesis, defect formation, and structural modification of atomic layered materials

This article summarizes recent research on laser-based processing of twodimensional (2D) atomic layered materials, including graphene and transition metal dichalcogenides (TMDCs). Ultrafast lasers offer unique processing routes that take advantage of distinct interaction mechanisms with 2D materials to enable extremely localized energy deposition. Experiments have shown that ablative direct patterning of graphene by ultrafast lasers can achieve resolutions of tens of nanometers, as well as single-step pattern transfer. Ultrafast lasers also induce non-thermal excitation mechanisms that are useful for the thinning of TMDCs to tune the 2D material bandgap. Laser-assisted site-specific doping was recently demonstrated where ultrafast laser radiation under ambient air environment could be used for the direct writing of high-quality graphene patterns on insulating substrates. This article concludes with an outlook towards developing further advanced laser processing with scalability, in situ monitoring strategies and potential applications.
 [1] ;  [2] ;  [3]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  2. Samsung Electronics, Suwon (South Korea)
  3. State Univ. of New York (SUNY), Stony Brook, NY (United States)
Publication Date:
Report Number(s):
Journal ID: ISSN 0883-7694; applab; PII: S0883769416002487; TRN: US1702473
Grant/Contract Number:
AC52-07NA27344; EEC-1449305
Accepted Manuscript
Journal Name:
MRS Bulletin
Additional Journal Information:
Journal Volume: 41; Journal Issue: 12; Journal ID: ISSN 0883-7694
Materials Research Society
Research Org:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org:
USDOE; National Science Foundation (NSF); Ministry of Land, Infrastructure and Transport of the Korean Government
Country of Publication:
United States
36 MATERIALS SCIENCE; 42 ENGINEERING; laser; machining; electronic material
OSTI Identifier: