Interfacial Charge Engineering in Ferroelectric-Controlled Mott Transistors
Abstract
Heteroepitaxial coupling at complex oxide interfaces introduces a powerful tool for engineering the charge degree of freedom in strongly correlated materials, which can be utilized to achieve tailored functionalities that are inaccessible in the bulk form. In this work, the charge-transfer effect between two strongly correlated oxides, Sm0.5Nd0.5NiO3 (SNNO) and La0.67Sr0.33MnO3 (LSMO), is exploited to realize a giant enhancement of the ferroelectric field effect in a prototype Mott field-effect transistor. By switching the polarization field of a ferroelectric Pb(Zr,Ti)O3 (PZT) gate, nonvolatile resistance modulation in the Mott transistors with single-layer SNNO and bilayer SNNO/LSMO channels is induced. For the same channel thickness, the bilayer channels exhibit up to two orders of magnitude higher resistance-switching ratio at 300 K, which is attributed to the intricate interplay between the charge screening at the PZT/SNNO interface and the charge transfer at the SNNO/LSMO interface. X-ray absorption spectroscopy and X-ray photoelectron spectroscopy studies of SNNO/LSMO heterostructures reveal about 0.1 electron per 2D unit cell transferred between the interfacial Mn and Ni layers, which is corroborated by first-principles density functional theory calculations. The study points to an effective strategy to design functional complex oxide interfaces for developing high-performance nanoelectronic and spintronic applications.
- Authors:
-
[1]
- Univ. of Nebraska, Lincoln, NE (United States)
- Columbia Univ., New York, NY (United States); New York Univ. Shanghai (China); New York Univ. (NYU), NY (United States)
- Publication Date:
- Research Org.:
- Univ. of Nebraska, Lincoln, NE (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Advanced Scientific Computing Research (ASCR); USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
- OSTI Identifier:
- 1596912
- Alternate Identifier(s):
- OSTI ID: 1375058
- Grant/Contract Number:
- SC0016153; DMR‐1420645; DMR‐1148783
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Materials
- Additional Journal Information:
- Journal Volume: 29; Journal Issue: 31; Journal ID: ISSN 0935-9648
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; charge transfer; complex oxide interfaces; ferroelectric field effect; Mott insulators; strongly correlated oxides
Citation Formats
Chen, Xuegang, Zhang, Xin, Koten, Mark A., Chen, Hanghui, Xiao, Zhiyong, Zhang, Le, Shield, Jeffrey E., Dowben, Peter A., and Hong, Xia. Interfacial Charge Engineering in Ferroelectric-Controlled Mott Transistors. United States: N. p., 2017.
Web. doi:10.1002/adma.201701385.
Chen, Xuegang, Zhang, Xin, Koten, Mark A., Chen, Hanghui, Xiao, Zhiyong, Zhang, Le, Shield, Jeffrey E., Dowben, Peter A., & Hong, Xia. Interfacial Charge Engineering in Ferroelectric-Controlled Mott Transistors. United States. https://doi.org/10.1002/adma.201701385
Chen, Xuegang, Zhang, Xin, Koten, Mark A., Chen, Hanghui, Xiao, Zhiyong, Zhang, Le, Shield, Jeffrey E., Dowben, Peter A., and Hong, Xia. Mon .
"Interfacial Charge Engineering in Ferroelectric-Controlled Mott Transistors". United States. https://doi.org/10.1002/adma.201701385. https://www.osti.gov/servlets/purl/1596912.
@article{osti_1596912,
title = {Interfacial Charge Engineering in Ferroelectric-Controlled Mott Transistors},
author = {Chen, Xuegang and Zhang, Xin and Koten, Mark A. and Chen, Hanghui and Xiao, Zhiyong and Zhang, Le and Shield, Jeffrey E. and Dowben, Peter A. and Hong, Xia},
abstractNote = {Heteroepitaxial coupling at complex oxide interfaces introduces a powerful tool for engineering the charge degree of freedom in strongly correlated materials, which can be utilized to achieve tailored functionalities that are inaccessible in the bulk form. In this work, the charge-transfer effect between two strongly correlated oxides, Sm0.5Nd0.5NiO3 (SNNO) and La0.67Sr0.33MnO3 (LSMO), is exploited to realize a giant enhancement of the ferroelectric field effect in a prototype Mott field-effect transistor. By switching the polarization field of a ferroelectric Pb(Zr,Ti)O3 (PZT) gate, nonvolatile resistance modulation in the Mott transistors with single-layer SNNO and bilayer SNNO/LSMO channels is induced. For the same channel thickness, the bilayer channels exhibit up to two orders of magnitude higher resistance-switching ratio at 300 K, which is attributed to the intricate interplay between the charge screening at the PZT/SNNO interface and the charge transfer at the SNNO/LSMO interface. X-ray absorption spectroscopy and X-ray photoelectron spectroscopy studies of SNNO/LSMO heterostructures reveal about 0.1 electron per 2D unit cell transferred between the interfacial Mn and Ni layers, which is corroborated by first-principles density functional theory calculations. The study points to an effective strategy to design functional complex oxide interfaces for developing high-performance nanoelectronic and spintronic applications.},
doi = {10.1002/adma.201701385},
journal = {Advanced Materials},
number = 31,
volume = 29,
place = {United States},
year = {Mon Jun 19 00:00:00 EDT 2017},
month = {Mon Jun 19 00:00:00 EDT 2017}
}
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