LDQ10: a compact ultra low-power radiation-hard 4 × 10 Gb/s driver array

Zeng, Z.; Zhang, T.; Wang, G.; Gui, P.; Kulis, S.; Moreira, P.

doi:10.1088/1748-0221/12/02/P02020

Title: LDQ10: a compact ultra low-power radiation-hard 4 × 10 Gb/s driver array

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Abstract

Here, a High-speed and low-power VCSEL driver is an important component of the Versatile Link for the high-luminosity LHC (HL-LHC) experiments. A compact low-power radiation-hard 4 × 10 Gb/s VCSEL driver array (LDQ10) has been developed in 65 nm CMOS technology. Each channel in LDQ10 can provide a modulation current up to 8 mA and bias current up to 12 mA. Edge pre-emphasis is employed to compensate for the bandwidth limitations due to parasitic and the turn-on delay of VCSEL devices. LDQ10 occupies a chip area of 1900 μm × 1700 μm and consumes 130 mW power for typical current settings. The modulation amplitude degrades less than 5% after 300 Mrad total ionizing dose. LDQ10 can be directly wire-bonded to the VCSEL array and it is a suitable candidate for the Versatile Link.

Authors:

Zeng, Z. ^[1]; Zhang, T. ^[1]; Wang, G. ^[1]; Gui, P. ^[1]; Kulis, S. ^[2]; Moreira, P. ^[2]

Southern Methodist Univ., Dallas, TX (United States)
European Organization for Nuclear Research (CERN), Geneva (Switzerland)

Publication Date:: Tue Feb 28 00:00:00 EST 2017

Research Org.:: Southern Methodist Univ., Dallas, TX (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1374394

Grant/Contract Number:: SC0007830

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Instrumentation

Additional Journal Information:: Journal Volume: 12; Journal Issue: 02; Journal ID: ISSN 1748-0221

Publisher:: Institute of Physics (IOP)

Country of Publication:: United States

Language:: English

Subject:: 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 42 ENGINEERING; analogue electronic circuits; VLSI circuits

Citation Formats


                    Zeng, Z., Zhang, T., Wang, G., Gui, P., Kulis, S., and Moreira, P. LDQ10: a compact ultra low-power radiation-hard 4 × 10 Gb/s driver array.  United States: N. p., 2017. 
Web.  doi:10.1088/1748-0221/12/02/P02020.

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                    Zeng, Z., Zhang, T., Wang, G., Gui, P., Kulis, S., & Moreira, P. LDQ10: a compact ultra low-power radiation-hard 4 × 10 Gb/s driver array.  United States.  https://doi.org/10.1088/1748-0221/12/02/P02020

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                    Zeng, Z., Zhang, T., Wang, G., Gui, P., Kulis, S., and Moreira, P. Tue .  
"LDQ10: a compact ultra low-power radiation-hard 4 × 10 Gb/s driver array".  United States.  https://doi.org/10.1088/1748-0221/12/02/P02020.  https://www.osti.gov/servlets/purl/1374394.

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@article{osti_1374394,

  title        = {LDQ10: a compact ultra low-power radiation-hard 4 × 10 Gb/s driver array},

  author       = {Zeng, Z. and Zhang, T. and Wang, G. and Gui, P. and Kulis, S. and Moreira, P.},

  abstractNote = {Here, a High-speed and low-power VCSEL driver is an important component of the Versatile Link for the high-luminosity LHC (HL-LHC) experiments. A compact low-power radiation-hard 4 × 10 Gb/s VCSEL driver array (LDQ10) has been developed in 65 nm CMOS technology. Each channel in LDQ10 can provide a modulation current up to 8 mA and bias current up to 12 mA. Edge pre-emphasis is employed to compensate for the bandwidth limitations due to parasitic and the turn-on delay of VCSEL devices. LDQ10 occupies a chip area of 1900 μm × 1700 μm and consumes 130 mW power for typical current settings. The modulation amplitude degrades less than 5% after 300 Mrad total ionizing dose. LDQ10 can be directly wire-bonded to the VCSEL array and it is a suitable candidate for the Versatile Link.},

  doi          = {10.1088/1748-0221/12/02/P02020},

  journal      = {Journal of Instrumentation},

  number       = 02,

  volume       = 12,

  place        = {United States},

  year         = {Tue Feb 28 00:00:00 EST 2017},

  month        = {Tue Feb 28 00:00:00 EST 2017}

}

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