A Compact Low-Power Driver Array for VCSELs in 65-nm CMOS Technology

Zeng, Zhiyao; Sun, Kexu; Wang, Guanhua; Zhang, Tao; Kulis, Szymon; Gui, Ping; Moreira, Paulo

doi:10.1109/TNS.2017.2702064

Title: A Compact Low-Power Driver Array for VCSELs in 65-nm CMOS Technology

Abstract

This article presents a compact low-power 4 x 10 Gb/s quad-driver module for Vertical-Cavity Surface-Emitting Laser (VCSEL) arrays in a 65 nm CMOS technology. The side-by-side drivers can be directly wire bonded to the VCSEL diode array, supporting up to 4 channels. To increase the bandwidth of the driver, an internal feed-forward path is added for pole-zero cancellation, without increasing the power consumption. An edge-configurable pre-emphasis technique is proposed to achieve high bandwidth and minimize the asymmetry of the fall and rise times of the driver output current. Measurement results demonstrate a RMS jitter of 0.68 ps for 10 Gb/s operation. Tests demonstrate negligible crosstalk between channels. Under irradiation, the modulation amplitude degrades less than 5% up to 300 Mrad ionizing dose. Finally, the area of the quaddriver array is 500 μm by 1000 μm and the total power consumption for the entire driver array chip is 130 mW for the typical current setting.

Authors:

Zeng, Zhiyao ^[1]; Sun, Kexu ^[1];

^[1]; Zhang, Tao ^[1]; Kulis, Szymon ^[2]; Gui, Ping ^[1]; Moreira, Paulo ^[2]

Southern Methodist Univ., Dallas, TX (United States)
European Organization for Nuclear Research (CERN), Geneva (Switzerland)

Publication Date:: Mon May 08 00:00:00 EDT 2017

Research Org.:: Southern Methodist Univ., Dallas, TX (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1374395

Grant/Contract Number:: SC0007830

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Transactions on Nuclear Science

Additional Journal Information:: Journal Volume: 64; Journal Issue: 6; Journal ID: ISSN 0018-9499

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 24 POWER TRANSMISSION AND DISTRIBUTION; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; high-speed data link; laser driver array; vertical-cavity surface-emitting laser (VCSEL)

Citation Formats


                    Zeng, Zhiyao, Sun, Kexu, Wang, Guanhua, Zhang, Tao, Kulis, Szymon, Gui, Ping, and Moreira, Paulo. A Compact Low-Power Driver Array for VCSELs in 65-nm CMOS Technology.  United States: N. p., 2017. 
Web.  doi:10.1109/TNS.2017.2702064.

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                    Zeng, Zhiyao, Sun, Kexu, Wang, Guanhua, Zhang, Tao, Kulis, Szymon, Gui, Ping, & Moreira, Paulo. A Compact Low-Power Driver Array for VCSELs in 65-nm CMOS Technology.  United States.  https://doi.org/10.1109/TNS.2017.2702064

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                    Zeng, Zhiyao, Sun, Kexu, Wang, Guanhua, Zhang, Tao, Kulis, Szymon, Gui, Ping, and Moreira, Paulo. Mon .  
"A Compact Low-Power Driver Array for VCSELs in 65-nm CMOS Technology".  United States.  https://doi.org/10.1109/TNS.2017.2702064.  https://www.osti.gov/servlets/purl/1374395.

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@article{osti_1374395,

  title        = {A Compact Low-Power Driver Array for VCSELs in 65-nm CMOS Technology},

  author       = {Zeng, Zhiyao and Sun, Kexu and Wang, Guanhua and Zhang, Tao and Kulis, Szymon and Gui, Ping and Moreira, Paulo},

  abstractNote = {This article presents a compact low-power 4 x 10 Gb/s quad-driver module for Vertical-Cavity Surface-Emitting Laser (VCSEL) arrays in a 65 nm CMOS technology. The side-by-side drivers can be directly wire bonded to the VCSEL diode array, supporting up to 4 channels. To increase the bandwidth of the driver, an internal feed-forward path is added for pole-zero cancellation, without increasing the power consumption. An edge-configurable pre-emphasis technique is proposed to achieve high bandwidth and minimize the asymmetry of the fall and rise times of the driver output current. Measurement results demonstrate a RMS jitter of 0.68 ps for 10 Gb/s operation. Tests demonstrate negligible crosstalk between channels. Under irradiation, the modulation amplitude degrades less than 5% up to 300 Mrad ionizing dose. Finally, the area of the quaddriver array is 500 μm by 1000 μm and the total power consumption for the entire driver array chip is 130 mW for the typical current setting.},

  doi          = {10.1109/TNS.2017.2702064},

  journal      = {IEEE Transactions on Nuclear Science},

  number       = 6,

  volume       = 64,

  place        = {United States},

  year         = {Mon May 08 00:00:00 EDT 2017},

  month        = {Mon May 08 00:00:00 EDT 2017}

}

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Works referencing / citing this record:

Power Efficient Current Driver Based on Negative Boosting for High-Speed Lasers
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Title: A Compact Low-Power Driver Array for VCSELs in 65-nm CMOS Technology

Abstract

Citation Formats

Power Efficient Current Driver Based on Negative Boosting for High-Speed Lasers journal, November 2019

Power Efficient Current Driver Based on Negative Boosting for High-Speed Lasers
journal, November 2019