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Title: A 5-μ m pitch charge-coupled device optimized for resonant inelastic soft X-ray scattering

Abstract

Here, we have developed a charge-coupled device (CCD) with 5 μm × 45 μm pixels on high-resistivity silicon. The fully depleted 200 μm-thick silicon detector is back-illuminated through a 10 nm-thick in situ doped polysilicon window and is thus highly efficient for soft through > 8 keV hard X-rays. The device described here is a 1.5 megapixel CCD with 2496 × 620 pixels. The pixel and camera geometry was optimized for Resonant Inelastic X-ray Scattering (RIXS) and is particularly advantageous for spectrometers with limited arm lengths. In this article, we describe the device architecture, construction and operation, and its performance during tests at the Advance Light Source (ALS) 8.0.1 RIXS beamline. The improved spectroscopic performance, when compared with a current standard commercial camera, is demonstrated with a ~280 eV (CK) X-ray beam on a graphite sample. Readout noise is typically 3-6 electrons and the point spread function for soft CK X-rays in the 5 μm direction is 4.0 μm ± 0.2 μm. Finally, the measured quantum efficiency of the CCD is greater than 75% in the range from 200 eV to 1 keV.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1]
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  1. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1436156
Alternate Identifier(s):
OSTI ID: 1374227
Grant/Contract Number:  
AC02-05CH11231; SC0011269
Resource Type:
Accepted Manuscript
Journal Name:
Review of Scientific Instruments
Additional Journal Information:
Journal Volume: 88; Journal Issue: 8; Journal ID: ISSN 0034-6748
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Andresen, N. C., Denes, P., Goldschmidt, A., Joseph, J., Karcher, A., and Tindall, C. S. A 5-μ m pitch charge-coupled device optimized for resonant inelastic soft X-ray scattering. United States: N. p., 2017. Web. doi:10.1063/1.4997727.
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Andresen, N. C., Denes, P., Goldschmidt, A., Joseph, J., Karcher, A., & Tindall, C. S. A 5-μ m pitch charge-coupled device optimized for resonant inelastic soft X-ray scattering. United States. https://doi.org/10.1063/1.4997727
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Andresen, N. C., Denes, P., Goldschmidt, A., Joseph, J., Karcher, A., and Tindall, C. S. Tue . "A 5-μ m pitch charge-coupled device optimized for resonant inelastic soft X-ray scattering". United States. https://doi.org/10.1063/1.4997727. https://www.osti.gov/servlets/purl/1436156.
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@article{osti_1436156,
title = {A 5-μ m pitch charge-coupled device optimized for resonant inelastic soft X-ray scattering},
author = {Andresen, N. C. and Denes, P. and Goldschmidt, A. and Joseph, J. and Karcher, A. and Tindall, C. S.},
abstractNote = {Here, we have developed a charge-coupled device (CCD) with 5 μm × 45 μm pixels on high-resistivity silicon. The fully depleted 200 μm-thick silicon detector is back-illuminated through a 10 nm-thick in situ doped polysilicon window and is thus highly efficient for soft through > 8 keV hard X-rays. The device described here is a 1.5 megapixel CCD with 2496 × 620 pixels. The pixel and camera geometry was optimized for Resonant Inelastic X-ray Scattering (RIXS) and is particularly advantageous for spectrometers with limited arm lengths. In this article, we describe the device architecture, construction and operation, and its performance during tests at the Advance Light Source (ALS) 8.0.1 RIXS beamline. The improved spectroscopic performance, when compared with a current standard commercial camera, is demonstrated with a ~280 eV (CK) X-ray beam on a graphite sample. Readout noise is typically 3-6 electrons and the point spread function for soft CK X-rays in the 5 μm direction is 4.0 μm ± 0.2 μm. Finally, the measured quantum efficiency of the CCD is greater than 75% in the range from 200 eV to 1 keV.},
doi = {10.1063/1.4997727},
journal = {Review of Scientific Instruments},
number = 8,
volume = 88,
place = {United States},
year = {Tue Aug 08 00:00:00 EDT 2017},
month = {Tue Aug 08 00:00:00 EDT 2017}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1063/1.4997727
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Cited by: 4 works
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Figures / Tables:

FIG. 1 FIG. 1: CCD architecture. Holes accumulate in and travel through the buried p-channels (in light blue). The polysilicon gate structure provides 3-clock phases ($\varphi$1, $\varphi$2, and $\varphi$3 shown in colors over six of the pixels) that shift charges along the column in opposite directions for adjacent columns. At the fourmore » corners, the pixels’ charges are measured and sub-sequentially discarded. No channel stops are used in order to reduce the pixel width to the minimum.« less
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Works referenced in this record:

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    FIG. 1 (p. 4)figure
    FIG. 2 (p. 4)figure
    FIG. 3 (p. 6)figure
    FIG. 4 (p. 6)figure
    FIG. 5 (p. 6)figure
    FIG. 6 (p. 7)figure
    FIG. 7 (p. 7)figure
    FIG. 8 (p. 8)figure
    FIG. 9 (p. 8)figure
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