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Title: Radiation Tolerant Interfaces: Influence of Local Stoichiometry at the Misfit Dislocation on Radiation Damage Resistance of Metal/Oxide Interfaces

Journal Article · · Advanced Materials Interfaces
ORCiD logo [1];  [2];  [1];  [3];  [1];  [3];  [4];  [3];  [2];  [2];  [2];  [5]
  1. Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab.
  2. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  3. Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Physical and Computational Sciences Directorate
  4. Univ. of Tennessee, Knoxville, TN (United States). Dept. of Nuclear Engineering
  5. Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Energy and Environment Directorate

The interaction of radiation with materials controls the performance, reliability, and safety of many structures in nuclear power systems. Revolutionary improvements in radiation damage resistance may be attainable if methods can be found to manipulate interface properties to give optimal interface stability and point defect recombination capability. To understand how variations in interface properties such as misfit dislocation density and local chemistry affect radiation‐induced defect absorption and recombination, a model system of metallic Cr x V 1− x (0 ≤ x ≤ 1) epitaxial films deposited on MgO(001) single crystal substrates has been explored. By controlling film composition, the lattice mismatch between the film and MgO is adjusted to vary the misfit dislocation density at the metal/oxide interface. The stability of these interfaces under various irradiation conditions is studied experimentally and theoretically. The results indicate that, unlike at metal/metal interfaces, the misfit dislocation density does not dominate radiation damage tolerance at metal/oxide interfaces. Rather, the stoichiometry and the location of the misfit dislocation extra half‐plane (in the metal or the oxide) drive radiation‐induced defect behavior. Together, these results demonstrate the sensitivity of defect recombination to interfacial chemistry and provide new avenues for engineering radiation‐tolerant nanomaterials for next‐generation nuclear power plants.

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States); Energy Frontier Research Centers (EFRC) (United States). Center for Materials at Irradiation and Mechanical Extremes (CMIME)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Biological and Environmental Research (BER); USDOE National Nuclear Security Administration (NNSA)
Contributing Organization:
Univ. of Tennessee, Knoxville, TN (United States)
Grant/Contract Number:
AC52-06NA25396; AC05-76RL01830
OSTI ID:
1369199
Alternate ID(s):
OSTI ID: 1401301
Report Number(s):
LA-UR-17-21394
Journal Information:
Advanced Materials Interfaces, Vol. 4, Issue 14; ISSN 2196-7350
Publisher:
Wiley-VCHCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 14 works
Citation information provided by
Web of Science

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Cited By (3)

Influence of Chemistry and Misfit Dislocation Structure on Dopant Segregation at Complex Oxide Heterointerfaces journal September 2018
Beyond Coherent Oxide Heterostructures: Atomic‐Scale Structure of Misfit Dislocations journal June 2019
Semicoherent oxide heterointerfaces: Structure, properties, and implications journal October 2019