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Title: Radiation Tolerant Interfaces: Influence of Local Stoichiometry at the Misfit Dislocation on Radiation Damage Resistance of Metal/Oxide Interfaces

Abstract

To understand how variations in interface properties such as misfit-dislocation density and local chemistry affect radiation-induced defect absorption and recombination, we have explored a model system of CrxV1-x alloy epitaxial films deposited on MgO single crystals. By controlling film composition, the lattice mismatch with MgO was adjusted so that the misfit-dislocation density varies at the interface. These interfaces were exposed to irradiation and in situ results show that the film with a semi-coherent interface (Cr) withstands irradiation while V film, which has similar semi-coherent interface like Cr, showed the largest damage. Theoretical calculations indicate that, unlike at metal/metal interfaces, the misfit dislocation density does not dominate radiation damage tolerance at metal/oxide interfaces. Rather, the stoichiometry, and the precise location of the misfit-dislocation density relative to the interface, drives defect behavior. Together, these results demonstrate the sensitivity of defect recombination to interfacial chemistry and provide new avenues for engineering radiation-tolerant nanomaterials.

Authors:
ORCiD logo [1];  [2];  [1];  [3];  [1];  [3];  [4];  [3];  [2];  [2];  [2];  [5]
  1. Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland WA 99352 USA
  2. Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos NM 87545 USA
  3. Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland WA 99352 USA
  4. Department of Nuclear Engineering, University of Tennessee, Knoxville TN 37996 USA
  5. Energy and Environment Directorate, Pacific Northwest National Laboratory, Richland WA 99352 USA
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Materials at Irradiation and Mechanical Extremes (CMIME); Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1378033
Report Number(s):
PNNL-SA-107725
Journal ID: ISSN 2196-7350; 47844; KP1704020
DOE Contract Number:  
AC05-76RL01830
Resource Type:
Journal Article
Journal Name:
Advanced Materials Interfaces
Additional Journal Information:
Journal Volume: 4; Journal Issue: 14; Journal ID: ISSN 2196-7350
Publisher:
Wiley-VCH
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 22 GENERAL STUDIES OF NUCLEAR REACTORS; Environmental Molecular Sciences Laboratory

Citation Formats

Shutthanandan, Vaithiyalingam, Choudhury, Samrat, Manandhar, Sandeep, Kaspar, Tiffany C., Wang, Chongmin, Devaraj, Arun, Wirth, Brian D., Thevuthasan, Suntharampilli, Hoagland, Richard G., Dholabhai, Pratik P., Uberuaga, Blas P., and Kurtz, Richard J. Radiation Tolerant Interfaces: Influence of Local Stoichiometry at the Misfit Dislocation on Radiation Damage Resistance of Metal/Oxide Interfaces. United States: N. p., 2017. Web. doi:10.1002/admi.201700037.
Shutthanandan, Vaithiyalingam, Choudhury, Samrat, Manandhar, Sandeep, Kaspar, Tiffany C., Wang, Chongmin, Devaraj, Arun, Wirth, Brian D., Thevuthasan, Suntharampilli, Hoagland, Richard G., Dholabhai, Pratik P., Uberuaga, Blas P., & Kurtz, Richard J. Radiation Tolerant Interfaces: Influence of Local Stoichiometry at the Misfit Dislocation on Radiation Damage Resistance of Metal/Oxide Interfaces. United States. doi:10.1002/admi.201700037.
Shutthanandan, Vaithiyalingam, Choudhury, Samrat, Manandhar, Sandeep, Kaspar, Tiffany C., Wang, Chongmin, Devaraj, Arun, Wirth, Brian D., Thevuthasan, Suntharampilli, Hoagland, Richard G., Dholabhai, Pratik P., Uberuaga, Blas P., and Kurtz, Richard J. Mon . "Radiation Tolerant Interfaces: Influence of Local Stoichiometry at the Misfit Dislocation on Radiation Damage Resistance of Metal/Oxide Interfaces". United States. doi:10.1002/admi.201700037.
@article{osti_1378033,
title = {Radiation Tolerant Interfaces: Influence of Local Stoichiometry at the Misfit Dislocation on Radiation Damage Resistance of Metal/Oxide Interfaces},
author = {Shutthanandan, Vaithiyalingam and Choudhury, Samrat and Manandhar, Sandeep and Kaspar, Tiffany C. and Wang, Chongmin and Devaraj, Arun and Wirth, Brian D. and Thevuthasan, Suntharampilli and Hoagland, Richard G. and Dholabhai, Pratik P. and Uberuaga, Blas P. and Kurtz, Richard J.},
abstractNote = {To understand how variations in interface properties such as misfit-dislocation density and local chemistry affect radiation-induced defect absorption and recombination, we have explored a model system of CrxV1-x alloy epitaxial films deposited on MgO single crystals. By controlling film composition, the lattice mismatch with MgO was adjusted so that the misfit-dislocation density varies at the interface. These interfaces were exposed to irradiation and in situ results show that the film with a semi-coherent interface (Cr) withstands irradiation while V film, which has similar semi-coherent interface like Cr, showed the largest damage. Theoretical calculations indicate that, unlike at metal/metal interfaces, the misfit dislocation density does not dominate radiation damage tolerance at metal/oxide interfaces. Rather, the stoichiometry, and the precise location of the misfit-dislocation density relative to the interface, drives defect behavior. Together, these results demonstrate the sensitivity of defect recombination to interfacial chemistry and provide new avenues for engineering radiation-tolerant nanomaterials.},
doi = {10.1002/admi.201700037},
journal = {Advanced Materials Interfaces},
issn = {2196-7350},
number = 14,
volume = 4,
place = {United States},
year = {2017},
month = {4}
}

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