Synthesis, structure, and optoelectronic properties of II-IV-V2 materials

Martinez, Aaron D.; Fioretti, Angela N.; Toberer, Eric S.; Tamboli, Adele C.

doi:10.1039/C7TA00406K

Title: Synthesis, structure, and optoelectronic properties of II-IV-V₂ materials

Abstract

II-IV-V₂ materials offer the promise of enhanced functionality in optoelectronic devices due to their rich ternary chemistry. In this review, we consider the potential for new optoelectronic devices based on nitride, phosphide, and arsenide II-IV-V₂ materials. As ternary analogs to the III-V materials, these compounds share many of the attractive features that have made the III-Vs the basis of modern optoelectronic devices (e.g. high mobility, strong optical absorption). Control of cation order parameter in the II-IV-V₂ materials can produce significant changes in optoelectronic properties at fixed chemical composition, including decoupling band gap from lattice parameter. Recent progress has begun to resolve outstanding questions concerning the structure, dopability, and optical properties of the II-IV-V₂ materials. Furthermore, remaining research challenges include growth optimization and integration into heterostructures and devices.

Authors:

Martinez, Aaron D. ^[1]; Fioretti, Angela N. ^[1]; Toberer, Eric S. ^[1]; Tamboli, Adele C. ^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States); Colorado School of Mines, Golden, CO (United States)

Publication Date:: Tue Mar 07 00:00:00 EST 2017

Research Org.:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office; USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1364163

Report Number(s):: NREL/JA-5J00-67711
Journal ID: ISSN 2050-7488; JMCAET

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Materials Chemistry. A

Additional Journal Information:: Journal Volume: 5; Journal Issue: 23; Journal ID: ISSN 2050-7488

Publisher:: Royal Society of Chemistry

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; optoelectronic devices; ternary chemistry; nitride; phosphide; arsenide; structure; dopability; optical properties

Citation Formats


                    Martinez, Aaron D., Fioretti, Angela N., Toberer, Eric S., and Tamboli, Adele C. Synthesis, structure, and optoelectronic properties of II-IV-V2 materials.  United States: N. p., 2017. 
Web.  doi:10.1039/C7TA00406K.

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                    Martinez, Aaron D., Fioretti, Angela N., Toberer, Eric S., & Tamboli, Adele C. Synthesis, structure, and optoelectronic properties of II-IV-V2 materials.  United States.  https://doi.org/10.1039/C7TA00406K

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                    Martinez, Aaron D., Fioretti, Angela N., Toberer, Eric S., and Tamboli, Adele C. Tue .  
"Synthesis, structure, and optoelectronic properties of II-IV-V2 materials".  United States.  https://doi.org/10.1039/C7TA00406K.  https://www.osti.gov/servlets/purl/1364163.

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@article{osti_1364163,

  title        = {Synthesis, structure, and optoelectronic properties of II-IV-V2 materials},

  author       = {Martinez, Aaron D. and Fioretti, Angela N. and Toberer, Eric S. and Tamboli, Adele C.},

  abstractNote = {II-IV-V2 materials offer the promise of enhanced functionality in optoelectronic devices due to their rich ternary chemistry. In this review, we consider the potential for new optoelectronic devices based on nitride, phosphide, and arsenide II-IV-V2 materials. As ternary analogs to the III-V materials, these compounds share many of the attractive features that have made the III-Vs the basis of modern optoelectronic devices (e.g. high mobility, strong optical absorption). Control of cation order parameter in the II-IV-V2 materials can produce significant changes in optoelectronic properties at fixed chemical composition, including decoupling band gap from lattice parameter. Recent progress has begun to resolve outstanding questions concerning the structure, dopability, and optical properties of the II-IV-V2 materials. Furthermore, remaining research challenges include growth optimization and integration into heterostructures and devices.},

  doi          = {10.1039/C7TA00406K},

  journal      = {Journal of Materials Chemistry. A},

  number       = 23,

  volume       = 5,

  place        = {United States},

  year         = {Tue Mar 07 00:00:00 EST 2017},

  month        = {Tue Mar 07 00:00:00 EST 2017}

}

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Title: Synthesis, structure, and optoelectronic properties of II-IV-V2 materials

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Growth of II-IV-V2 chalcopyrite nitrides by molecular beam epitaxy journal, October 2005

Photoeffects in ZnSiP2 journal, May 1974

Epitaxial growth of germanium on II–IV–V2 substrates journal, November 1969

Synthesis, lattice structure, and band gap of ZnSnN 2 journal, June 2013

Organometallic chemical vapor deposition and characterization of ZnGe−xSixP2-Ge alloys on GaP substrates journal, August 1991

Band gap and electronic structure of MgSiN 2 determined using soft X-ray spectroscopy and density functional theory : Band gap and electronic structure of MgSiN journal, March 2015

Synthesis and Properties of ZnGeN[sub 2] journal, January 1974

Vacuum growth of thin films of ZnSnP2 journal, June 1987

Characterization and control of ZnGeN2 cation lattice ordering journal, March 2017

Growth and physical properties of ZnGeAs2 journal, October 1983

On the order-disorder phase transition in ternary compounds journal, November 1987

Preparation and properties of CdSnP 2 /InP heterojunctions grown by LPE from Sn solution journal, March 1974

Synthesis of photoactive ZnSnP 2 semiconductor nanowires journal, July 2015

Preparation and properties of CdSnAs2 journal, January 1961

Preparation and Photoelectrochemical Characterization of ZnSiAs2 Crystals journal, April 1997

Thin film tandem photovoltaic cell from II-IV-V chalcopyrites journal, April 2010

High-pressure synthesis of ZnSiP2 and ZnGeP2 journal, January 1992

Structural and Optoelectronic Characterization of RF Sputtered ZnSnN 2 journal, February 2013

High-pressure synthesis of new compounds, ZnSiN2 and ZnGeN2 with distorted wurtzite structure journal, January 1992

Semiconducting AIIBIVC2V Compounds journal, January 1967

Stabilization of orthorhombic phase in single-crystal ZnSnN 2 films journal, July 2016

Epitaxial growth of solid solutions of ZnSiP2 in Si journal, July 1972

Energy band genesis from sublattice states in MgSiN2 and MgGeN2 crystals journal, December 2010

Synthesis of ZnSnN 2 crystals via a high-pressure metathesis reaction : Synthesis of ZnSnN journal, February 2016

Band gap of sphalerite and chalcopyrite phases of epitaxial ZnSnP2 journal, June 2010

Electroluminescence in ZnSiP2 schottky diodes journal, May 1977

Compositional Studies Related to Sputtered Cd-Si-As Films journal, January 1981

Local order in ZnGeP 2 :Mn crystals journal, July 2007

Preparation and characteristics of ZnSnP2 journal, March 1968

Formation energies and chemical potential diagrams of II-Ge-N 2 semiconductors journal, August 2016

Order–Disorder Phenomena and Their Effects on Bandgap in ZnSnP 2 journal, January 2017

First-principles calculation of the order-disorder transition in chalcopyrite semiconductors journal, February 1992

Epitaxial Growth and Structural Characterization of Single Crystalline ZnGeN 2 journal, January 1999

Organometallic chemical vapor deposition of epitaxial ZnGeP2 films on (001) GaP substrates journal, February 1989

Bandgap engineering of ZnSnP 2 for high-efficiency solar cells journal, June 2012

Molecular beam epitaxial growth of II–V semiconductor Zn3As2 and II–IV–V chalcopyrite ZnGeAs2 journal, February 1987

Phase stability, mechanical and thermodynamic properties of orthorhombic and trigonal MgSiN 2 : an ab initio study journal, October 2015

Fingerprints of CuPt ordering in III-V semiconductor alloys: Valence-band splittings, band-gap reduction, and x-ray structure factors journal, April 1998

Title: Synthesis, structure, and optoelectronic properties of II-IV-V₂ materials

Concerning growth of single crystal of the II-IV-V diamond-like compounds ZnSiP2, CdSiP2, ZnGeP2, and CdSnP2 and standard enthalpies of formation for ZnSiP2 and CdSiP2
journal, April 1971

Applications of extended X-ray absorption fine-structure spectroscopy to studies of bimetallic nanoparticle catalysts
journal, January 2012

Disorder effects on the band structure of ${ZnGeN}_{2}$ : Role of exchange defects
journal, November 2016

Quantitative determination of the order parameter in epitaxial layers of ZnSnP2
journal, April 2000

Vibrational modes in ${ZnGeN}_{2}$ : Raman study and theory
journal, June 2008

Prospective investigations of orthorhombic ZnGeN2: synthesis, lattice dynamics and optical properties
journal, May 2001

Effect of Cation Sublattice Ordering on Structure and Raman Scattering of ZnGeN ₂
journal, January 2013

Vapor-liquid-solid mechanism of single crystal growth
journal, March 1964

In situ measurement of CuPt alloy ordering using strain anisotropy
journal, February 2014

Band Structure of ZnGe $P_{2}$ and ZnSi $P_{2}$ — Ternary Compounds with Pseudodirect Energy Gaps
journal, May 1973

Metal–nonmetal transition in the sphalerite-type solid solution [ZnSnSb2]1−x[2(InSb)]x
journal, June 2009

Design of nitride semiconductors for solar energy conversion
journal, January 2016

Order–disorder transition in epitaxial ZnSnP2
journal, April 1999

Sphalerite−Chalcopyrite Polymorphism in Semimetallic ZnSnSb ₂
journal, November 2005

Bandgap Tunability in Zn(Sn,Ge)N ₂ Semiconductor Alloys
journal, December 2013

Electron and hole mobility in ZnSiP2
journal, May 1976

Analysis of hall measurements on ZnSiP2
journal, February 1974

Direct-indirect crossover in Ga _x In _1-x P alloys
journal, December 2011

Bulk crystal growth and characterization of ZnSnP ₂ compound semiconductor by flux method : Bulk crystal growth and characterization of ZnSnP
journal, March 2015

Synthesis, Structure, and Luminescence of A ² B ⁴ C ⁵ Nitrides
journal, January 2000

Photoconductivity of ZnSiP2 near the absorption edge
journal, July 1975

Optical absorption edges of compound semiconductors in the ZnSiP ₂ -ZnSiAs ₂ range
journal, July 1973

Semi-insulating ZnSip2
journal, August 1973

Growth of ZnSnN2 by Molecular Beam Epitaxy
journal, January 2014

Synthesis and characterization of ZnGeN2 grown from elemental Zn and Ge sources
journal, March 2008

Synthesis of CuInS ₂ nanocrystals from a molecular complex – characterization of the orthorhombic domain structure
journal, January 2015

Control of the Electrical Properties in Spinel Oxides by Manipulating the Cation Disorder
journal, October 2013

Photovoltaic effect of ZnSiP2 crystals from Zn melt
journal, October 1979

A novel route for preparing MgSiN2 powder by combustion synthesis
journal, April 2005

Preparation et proprietes de ZnGeN2
journal, September 1970

Phase Stability and Defect Physics of a Ternary ZnSnN ₂ Semiconductor: First Principles Insights
journal, October 2013

The Structure and Properties of the Semiconducting Compound ZnSnP2
journal, January 1968

Electronic structure of wide-band-gap ternary pnictides with the chalcopyrite structure
journal, February 1994

Cathodoluminescence of ZnSiP2 and CdSnP2
journal, January 1970

Growth, disorder, and physical properties of ZnSnN ₂
journal, July 2013

Preparation and Some Physical Properties of ZnGeP2
journal, January 1969

On the ternary compound MgSiP2 grown from antimony solution
journal, June 1975

Sharp-Line Photoluminescence in ZnSi $P_{2}$
journal, June 1970

Epitaxial growth and characterization of ZnGeN2 by metalorganic vapor phase epitaxy
journal, January 2004

Growth of II-IV-V2 chalcopyrite nitrides by molecular beam epitaxy
journal, October 2005

Photoeffects in ZnSiP2
journal, May 1974

Epitaxial growth of germanium on II–IV–V2 substrates
journal, November 1969

Synthesis, lattice structure, and band gap of ZnSnN ₂
journal, June 2013

Organometallic chemical vapor deposition and characterization of ZnGe−xSixP2-Ge alloys on GaP substrates
journal, August 1991

Band gap and electronic structure of MgSiN ₂ determined using soft X-ray spectroscopy and density functional theory : Band gap and electronic structure of MgSiN
journal, March 2015

Synthesis and Properties of ZnGeN[sub 2]
journal, January 1974

Vacuum growth of thin films of ZnSnP2
journal, June 1987

Characterization and control of ZnGeN2 cation lattice ordering
journal, March 2017

Growth and physical properties of ZnGeAs2
journal, October 1983

On the order-disorder phase transition in ternary compounds
journal, November 1987

Preparation and properties of CdSnP ₂ /InP heterojunctions grown by LPE from Sn solution
journal, March 1974

Synthesis of photoactive ZnSnP ₂ semiconductor nanowires
journal, July 2015

Preparation and properties of CdSnAs2
journal, January 1961

Preparation and Photoelectrochemical Characterization of ZnSiAs₂ Crystals
journal, April 1997

Thin film tandem photovoltaic cell from II-IV-V chalcopyrites
journal, April 2010

High-pressure synthesis of ZnSiP2 and ZnGeP2
journal, January 1992

Structural and Optoelectronic Characterization of RF Sputtered ZnSnN ₂
journal, February 2013

High-pressure synthesis of new compounds, ZnSiN2 and ZnGeN2 with distorted wurtzite structure
journal, January 1992

Semiconducting AIIBIVC2V Compounds
journal, January 1967

Stabilization of orthorhombic phase in single-crystal ZnSnN ₂ films
journal, July 2016

Epitaxial growth of solid solutions of ZnSiP2 in Si
journal, July 1972

Energy band genesis from sublattice states in MgSiN2 and MgGeN2 crystals
journal, December 2010

Synthesis of ZnSnN ₂ crystals via a high-pressure metathesis reaction : Synthesis of ZnSnN
journal, February 2016

Band gap of sphalerite and chalcopyrite phases of epitaxial ZnSnP2
journal, June 2010

Electroluminescence in ZnSiP2 schottky diodes
journal, May 1977

Compositional Studies Related to Sputtered Cd-Si-As Films
journal, January 1981

Local order in ZnGeP ₂ :Mn crystals
journal, July 2007

Preparation and characteristics of ZnSnP2
journal, March 1968

Formation energies and chemical potential diagrams of II-Ge-N ₂ semiconductors
journal, August 2016

Order–Disorder Phenomena and Their Effects on Bandgap in ZnSnP ₂
journal, January 2017

First-principles calculation of the order-disorder transition in chalcopyrite semiconductors
journal, February 1992

Epitaxial Growth and Structural Characterization of Single Crystalline ZnGeN ₂
journal, January 1999

Organometallic chemical vapor deposition of epitaxial ZnGeP2 films on (001) GaP substrates
journal, February 1989

Bandgap engineering of ZnSnP ₂ for high-efficiency solar cells
journal, June 2012

Molecular beam epitaxial growth of II–V semiconductor Zn3As2 and II–IV–V chalcopyrite ZnGeAs2
journal, February 1987

Phase stability, mechanical and thermodynamic properties of orthorhombic and trigonal MgSiN ₂ : an ab initio study
journal, October 2015

Fingerprints of CuPt ordering in III-V semiconductor alloys: Valence-band splittings, band-gap reduction, and x-ray structure factors
journal, April 1998

MBE growth of MgGeAs ₂ :Mn on GaAs substrate
journal, January 2007

Defect Tolerant Semiconductors for Solar Energy Conversion
journal, March 2014