Quasi-two-dimensional electron gas at the interface of γ-Al2O3/SrTiO3 heterostructures grown by atomic layer deposition

Ngo, Thong Q.; Goble, Nicholas J.; Posadas, Agham; Kormondy, Kristy J.; Lu, Sirong; McDaniel, Martin D.; Jordan-Sweet, Jean; Smith, David J.; Gao, Xuan P. A.; Demkov, Alexander A.; Ekerdt, John G.

doi:10.1063/1.4930575

Title: Quasi-two-dimensional electron gas at the interface of γ-Al₂O₃/SrTiO₃ heterostructures grown by atomic layer deposition

Abstract

We report the formation of a quasi-two-dimensional electron gas (2-DEG) at the interface of γ-Al₂O₃/TiO₂-terminated SrTiO₃ (STO) grown by atomic layer deposition (ALD). The ALD growth of Al₂O₃ on STO(001) single crystal substrates was performed at temperatures in the range of 200–345 °C. Trimethylaluminum and water were used as co-reactants. In situ reflection high energy electron diffraction, ex situ x-ray diffraction, and ex situ cross-sectional transmission electron microscopy were used to determine the crystallinity of the Al₂O₃ films. As-deposited Al₂O₃ films grown above 300 °C were crystalline with the γ-Al₂O₃ phase. In situ x-ray photoelectron spectroscopy was used to characterize the Al₂O₃/STO interface, indicating that a Ti³⁺ feature in the Ti 2p spectrum of STO was formed after 2–3 ALD cycles of Al₂O₃ at 345 °C and even after the exposure to trimethylaluminum alone at 300 and 345 °C. The interface quasi-2-DEG is metallic and exhibits mobility values of ~4 and 3000 cm² V^–1 s^–1 at room temperature and 15 K, respectively. The interfacial conductivity depended on the thickness of the Al₂O₃ layer. In conclusion, the Ti³⁺ signal originated from the near-interfacial region and vanished after annealing in an oxygen environment.

Authors:

Ngo, Thong Q. ^[1]; Goble, Nicholas J. ^[2]; Posadas, Agham ^[1];

^[1]; Lu, Sirong ^[3]; McDaniel, Martin D. ^[1]; Jordan-Sweet, Jean ^[4]; Smith, David J. ^[3]; Gao, Xuan P. A. ^[2]; Demkov, Alexander A. ^[1]; Ekerdt, John G. ^[1]

Univ. of Texas, Austin, TX (United States)
Case Western Reserve Univ., Cleveland, OH (United States)
Arizona State Univ., Tempe, AZ (United States)
IBM T.J. Watson Research Center, Yorktown Heights, NY (United States)

Publication Date:: Tue Sep 15 00:00:00 EDT 2015

Research Org.:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1354507

Report Number(s):: BNL-113024-2016-JA
Journal ID: ISSN 0021-8979

Grant/Contract Number:: SC00112704; N00014-10-10489; FA9550-12-10494; FA9550-12-1-0441; AC02-98CH10886

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 118; Journal Issue: 11; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 74 ATOMIC AND MOLECULAR PHYSICS; Two-dimensional electron gas; Transition metal oxides; X-ray diffraction; Crystal structure; Transmission electron microscopy; Electron diffraction; Atomic layer deposition; X-ray photoelectron spectroscopy; Heterostructures; Thin films

Citation Formats


                    Ngo, Thong Q., Goble, Nicholas J., Posadas, Agham, Kormondy, Kristy J., Lu, Sirong, McDaniel, Martin D., Jordan-Sweet, Jean, Smith, David J., Gao, Xuan P. A., Demkov, Alexander A., and Ekerdt, John G. Quasi-two-dimensional electron gas at the interface of γ-Al2O3/SrTiO3 heterostructures grown by atomic layer deposition.  United States: N. p., 2015. 
Web.  doi:10.1063/1.4930575.

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                    Ngo, Thong Q., Goble, Nicholas J., Posadas, Agham, Kormondy, Kristy J., Lu, Sirong, McDaniel, Martin D., Jordan-Sweet, Jean, Smith, David J., Gao, Xuan P. A., Demkov, Alexander A., & Ekerdt, John G. Quasi-two-dimensional electron gas at the interface of γ-Al2O3/SrTiO3 heterostructures grown by atomic layer deposition.  United States.  https://doi.org/10.1063/1.4930575

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                    Ngo, Thong Q., Goble, Nicholas J., Posadas, Agham, Kormondy, Kristy J., Lu, Sirong, McDaniel, Martin D., Jordan-Sweet, Jean, Smith, David J., Gao, Xuan P. A., Demkov, Alexander A., and Ekerdt, John G. Tue .  
"Quasi-two-dimensional electron gas at the interface of γ-Al2O3/SrTiO3 heterostructures grown by atomic layer deposition".  United States.  https://doi.org/10.1063/1.4930575.  https://www.osti.gov/servlets/purl/1354507.

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@article{osti_1354507,

  title        = {Quasi-two-dimensional electron gas at the interface of γ-Al2O3/SrTiO3 heterostructures grown by atomic layer deposition},

  author       = {Ngo, Thong Q. and Goble, Nicholas J. and Posadas, Agham and Kormondy, Kristy J. and Lu, Sirong and McDaniel, Martin D. and Jordan-Sweet, Jean and Smith, David J. and Gao, Xuan P. A. and Demkov, Alexander A. and Ekerdt, John G.},

  abstractNote = {We report the formation of a quasi-two-dimensional electron gas (2-DEG) at the interface of γ-Al2O3/TiO2-terminated SrTiO3 (STO) grown by atomic layer deposition (ALD). The ALD growth of Al2O3 on STO(001) single crystal substrates was performed at temperatures in the range of 200–345 °C. Trimethylaluminum and water were used as co-reactants. In situ reflection high energy electron diffraction, ex situ x-ray diffraction, and ex situ cross-sectional transmission electron microscopy were used to determine the crystallinity of the Al2O3 films. As-deposited Al2O3 films grown above 300 °C were crystalline with the γ-Al2O3 phase. In situ x-ray photoelectron spectroscopy was used to characterize the Al2O3/STO interface, indicating that a Ti3+ feature in the Ti 2p spectrum of STO was formed after 2–3 ALD cycles of Al2O3 at 345 °C and even after the exposure to trimethylaluminum alone at 300 and 345 °C. The interface quasi-2-DEG is metallic and exhibits mobility values of ~4 and 3000 cm2 V–1 s–1 at room temperature and 15 K, respectively. The interfacial conductivity depended on the thickness of the Al2O3 layer. In conclusion, the Ti3+ signal originated from the near-interfacial region and vanished after annealing in an oxygen environment.},

  doi          = {10.1063/1.4930575},

  journal      = {Journal of Applied Physics},

  number       = 11,

  volume       = 118,

  place        = {United States},

  year         = {Tue Sep 15 00:00:00 EDT 2015},

  month        = {Tue Sep 15 00:00:00 EDT 2015}

}

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Title: Quasi-two-dimensional electron gas at the interface of γ-Al2O3/SrTiO3 heterostructures grown by atomic layer deposition

Abstract

Citation Formats

Quantum oscillations and subband properties of the two-dimensional electron gas at the LaAlO 3 /SrTiO 3 interface journal, February 2014

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Impact of structural transitions on electron transport at LaAlO 3 /SrTiO 3 heterointerfaces journal, February 2012

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Intrinsic Mobility Limiting Mechanisms in Lanthanum-Doped Strontium Titanate journal, May 2014

Atomic Layer Deposition: An Overview journal, January 2010

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Title: Quasi-two-dimensional electron gas at the interface of γ-Al₂O₃/SrTiO₃ heterostructures grown by atomic layer deposition

Quantum oscillations and subband properties of the two-dimensional electron gas at the LaAlO ₃ /SrTiO ₃ interface
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Structures and transformation mechanisms of the η, γ and θ transition aluminas
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Room Temperature Formation of High-Mobility Two-Dimensional Electron Gases at Crystalline Complex Oxide Interfaces
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Quasi-two-dimensional electron gas at γ-Al ₂ O ₃ /SrTiO ₃ heterointerfaces fabricated by spin coating method
journal, October 2018

Metallic conduction and ferromagnetism in M Al ₂ O ₄ /SrTiO ₃ spinel/perovskite heterostructures ( M = Fe, Co, Ni)
journal, December 2018

Orbital-adapted electronic structure and anisotropic transport in $γ − {Al}_{2} O_{3} / {SrTiO}_{3}$ heterostructure
journal, January 2020