The influence of surface preparation on low temperature HfO{sub 2} ALD on InGaAs (001) and (110) surfaces
- Materials Science and Engineering Department, University of California, San Diego, California 9500 (United States)
- Materials Science and Engineering Department, Stanford University, Stanford, California 94305 (United States)
- Materials Department, University of California, Santa Barbara, California 93106 (United States)
- Global Foundries, 2600 Great America Way, Santa Clara, California 95054 (United States)
- Department of Physics, Texas State University, San Marcos, Texas 78666 (United States)
Current logic devices rely on 3D architectures, such as the tri-gate field effect transistor (finFET), which utilize the (001) and (110) crystal faces simultaneously thus requiring passivation methods for the (110) face in order to ensure a pristine 3D surface prior to further processing. Scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS), and correlated electrical measurement on MOSCAPs were utilized to compare the effects of a previously developed in situ pre-atomic layer deposition (ALD) surface clean on the InGaAs (001) and (110) surfaces. Ex situ wet cleans are very effective on the (001) surface but not the (110) surface. Capacitance voltage indicated the (001) surface with no buffered oxide etch had a higher C{sub max} hypothesized to be a result of poor nucleation of HfO{sub 2} on the native oxide. An in situ pre-ALD surface clean employing both atomic H and trimethylaluminum (TMA) pre-pulsing, developed by Chobpattana et al. and Carter et al. for the (001) surface, was demonstrated to be effective on the (110) surface for producing low D{sub it} high C{sub ox} MOSCAPs. Including TMA in the pre-ALD surface clean resulted in reduction of the magnitude of the interface state capacitance. The XPS studies show the role of atomic H pre-pulsing is to remove both carbon and oxygen while STM shows the role of TMA pre-pulsing is to eliminate H induced etching. Devices fabricated at 120 °C and 300 °C were compared.
- OSTI ID:
- 22493180
- Journal Information:
- Journal of Chemical Physics, Vol. 143, Issue 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-9606
- Country of Publication:
- United States
- Language:
- English
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