Search Menu
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information
Search Scholarly Publications

Title: La1–xBi1+xS3 ( x ≈ 0.08): An n-Type Semiconductor

Abstract

We study the new bismuth chalcogenide La0.92Bi1.08S3 which crystallizes in the monoclinic space group C2/m with a = 28.0447(19) Å, b = 4.0722(2) Å, c = 14.7350(9) Å, and β = 118.493(5)°. The structure of La0.92Bi1.08S3 is built of NaCl-type Bi2S5 blocks and BiS4 and LaS5 infinitely long chains, forming a compact three-dimensional framework with parallel tunnels. Optical spectroscopy and resistivity measurements reveal a semiconducting behavior with a band gap of ~1 eV and activation energy for transport of 0.36(1) eV. Thermopower measurements suggest the majority carriers of La0.92Bi1.08S3 are electrons. Heat capacity measurements indicate no phase transitions from 2 to 300 K. Lastly, band structure calculations at the density functional theory level confirm the semiconducting nature and the indirect gap of La0.92Bi1.08S3.

Authors:
 [1];  [2];  [3];  [1];  [1];  [2];  [3]
+ Show Author Affiliations
  1. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  2. Nanjing Univ. (China). National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures
  3. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Northwestern Univ., Evanston, IL (United States). Department of Chemistry
Publication Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); Natural National Science Foundation of China (NSFC)
OSTI Identifier:
1352577
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Inorganic Chemistry
Additional Journal Information:
Journal Volume: 55; Journal Issue: 7; Journal ID: ISSN 0020-1669
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Han, Fei, Liu, Huimei, Malliakas, Christos D., Sturza, Mihai, Chung, Duck Young, Wan, Xiangang, and Kanatzidis, Mercouri G. La1–xBi1+xS3 ( x ≈ 0.08): An n-Type Semiconductor. United States: N. p., 2016. Web. doi:10.1021/acs.inorgchem.6b00025.
Copy to clipboard
Han, Fei, Liu, Huimei, Malliakas, Christos D., Sturza, Mihai, Chung, Duck Young, Wan, Xiangang, & Kanatzidis, Mercouri G. La1–xBi1+xS3 ( x ≈ 0.08): An n-Type Semiconductor. United States. https://doi.org/10.1021/acs.inorgchem.6b00025
Copy to clipboard
Han, Fei, Liu, Huimei, Malliakas, Christos D., Sturza, Mihai, Chung, Duck Young, Wan, Xiangang, and Kanatzidis, Mercouri G. Mon . "La1–xBi1+xS3 ( x ≈ 0.08): An n-Type Semiconductor". United States. https://doi.org/10.1021/acs.inorgchem.6b00025. https://www.osti.gov/servlets/purl/1352577.
Copy to clipboard
@article{osti_1352577,
title = {La1–xBi1+xS3 ( x ≈ 0.08): An n-Type Semiconductor},
author = {Han, Fei and Liu, Huimei and Malliakas, Christos D. and Sturza, Mihai and Chung, Duck Young and Wan, Xiangang and Kanatzidis, Mercouri G.},
abstractNote = {We study the new bismuth chalcogenide La0.92Bi1.08S3 which crystallizes in the monoclinic space group C2/m with a = 28.0447(19) Å, b = 4.0722(2) Å, c = 14.7350(9) Å, and β = 118.493(5)°. The structure of La0.92Bi1.08S3 is built of NaCl-type Bi2S5 blocks and BiS4 and LaS5 infinitely long chains, forming a compact three-dimensional framework with parallel tunnels. Optical spectroscopy and resistivity measurements reveal a semiconducting behavior with a band gap of ~1 eV and activation energy for transport of 0.36(1) eV. Thermopower measurements suggest the majority carriers of La0.92Bi1.08S3 are electrons. Heat capacity measurements indicate no phase transitions from 2 to 300 K. Lastly, band structure calculations at the density functional theory level confirm the semiconducting nature and the indirect gap of La0.92Bi1.08S3.},
doi = {10.1021/acs.inorgchem.6b00025},
journal = {Inorganic Chemistry},
number = 7,
volume = 55,
place = {United States},
year = {Mon Mar 21 00:00:00 EDT 2016},
month = {Mon Mar 21 00:00:00 EDT 2016}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1021/acs.inorgchem.6b00025
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal
Citation Metrics:
Cited by: 6 works
Citation information provided by
Web of Science
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

Transport properties of p-type Bi2Te3Sb2Te3 alloys in the temperature range 80–370°K
journal, September 1962

  • Testardi, L. R.; Bierly, J. N.; Donahoe, F. J.
  • Journal of Physics and Chemistry of Solids, Vol. 23, Issue 9
  • DOI: 10.1016/0022-3697(62)90168-3

THERMOELECTRIC PROPERTIES OF Bi 2 Te 3 –Sb 2 Te 3 ALLOYS
journal, April 1965

  • Champness, C. H.; Chiang, P. T.; Parekh, P.
  • Canadian Journal of Physics, Vol. 43, Issue 4
  • DOI: 10.1139/p65-060

THERMOELECTRIC PROPERTIES OF n-TYPE Bi 2 Te 3 –Bi 2 Se 3 ALLOYS
journal, November 1967

  • Champness, C. H.; Muir, W. B.; Chiang, P. T.
  • Canadian Journal of Physics, Vol. 45, Issue 11
  • DOI: 10.1139/p67-304

Electrical and thermoelectrical properties of undoped Bi2Te3-Sb2Te3 and Bi2Te3-Sb2Te3-Sb2Se3 single crystals
journal, January 1991

  • Jeon, Hyung-Wook; Ha, Heon-Phil; Hyun, Dow-Bin
  • Journal of Physics and Chemistry of Solids, Vol. 52, Issue 4
  • DOI: 10.1016/0022-3697(91)90151-O

Materials for thermoelectric energy conversion
journal, April 1988

High Performance Thermoelectric Tl 9 BiTe 6 with an Extremely Low Thermal Conductivity
journal, May 2001

Oligomerization Versus Polymerization of Te x n - in the Polytelluride Compound BaBiTe 3 . Structural Characterization, Electronic Structure, and Thermoelectric Properties
journal, March 1997

  • Chung, Duck-Young; Jobic, Stéphane; Hogan, Tim
  • Journal of the American Chemical Society, Vol. 119, Issue 10
  • DOI: 10.1021/ja9636496

A New Thermoelectric Material: CsBi 4 Te 6
journal, May 2004

  • Chung, Duck-Young; Hogan, Tim P.; Rocci-Lane, Melissa
  • Journal of the American Chemical Society, Vol. 126, Issue 20
  • DOI: 10.1021/ja039885f

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
journal, May 2009

  • Zhang, Haijun; Liu, Chao-Xing; Qi, Xiao-Liang
  • Nature Physics, Vol. 5, Issue 6, p. 438-442
  • DOI: 10.1038/nphys1270

Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
journal, May 2009

  • Xia, Y.; Qian, D.; Hsieh, D.
  • Nature Physics, Vol. 5, Issue 6, p. 398-402
  • DOI: 10.1038/nphys1274

Atom-specific spin mapping and buried topological states in a homologous series of topological insulators
journal, January 2012

  • Eremeev, Sergey V.; Landolt, Gabriel; Menshchikova, Tatiana V.
  • Nature Communications, Vol. 3, Issue 1
  • DOI: 10.1038/ncomms1638

Dirac fermions and superconductivity in the homologous structures ( Ag x Pb 1 − x Se ) 5 ( Bi 2 Se 3 ) 3 m ( m = 1 , 2 )
journal, July 2014

Manipulation of Topological States and the Bulk Band Gap Using Natural Heterostructures of a Topological Insulator
journal, December 2012

A 2 Bi 8 Se 13 (A = Rb, Cs), CsBi 3.67 Se 6 , and BaBi 2 Se 4 :  New Ternary Semiconducting Bismuth Selenides
journal, January 2001

  • Iordanidis, Lykourgos; Brazis, Paul W.; Kyratsi, Theodora
  • Chemistry of Materials, Vol. 13, Issue 2
  • DOI: 10.1021/cm000734a

Chemistry in Molten Alkali Metal Polyselenophosphate Fluxes. Influence of Flux Composition on Dimensionality. Layers and Chains in APbPSe4, A4Pb(PSe4)2 (A = Rb, Cs), and K4Eu(PSe4)2
journal, January 1996

  • Chondroudis, Konstantinos; McCarthy, Timothy J.; Kanatzidis, Mercouri G.
  • Inorganic Chemistry, Vol. 35, Issue 4
  • DOI: 10.1021/ic950479+

“Design” in Solid-State Chemistry Based on Phase Homologies. The Concept of Structural Evolution and the New Megaseries Am[M1+lSe2+l]2m[M2l+nSe2+3l+n]
journal, January 2003

  • Mrotzek, Antje; Kanatzidis, Mercouri G.
  • Accounts of Chemical Research, Vol. 36, Issue 2
  • DOI: 10.1021/ar020099+

Structural Evolution and Phase Homologies for “Design” and Prediction of Solid-State Compounds
journal, April 2005

  • Kanatzidis, Mercouri G.
  • Accounts of Chemical Research, Vol. 38, Issue 4
  • DOI: 10.1021/ar040176w

Superconductivity in Cu x Bi 2 Se 3 and its Implications for Pairing in the Undoped Topological Insulator
journal, February 2010

Superconductivity in Novel BiS 2 -Based Layered Superconductor LaO 1- x F x BiS 2
journal, November 2012

  • Mizuguchi, Yoshikazu; Demura, Satoshi; Deguchi, Keita
  • Journal of the Physical Society of Japan, Vol. 81, Issue 11
  • DOI: 10.1143/JPSJ.81.114725

Superconductivity appears in the vicinity of semiconducting-like behavior in CeO 1 − x F x BiS 2
journal, December 2012

New Member of BiS 2 -Based Superconductor NdO 1- x F x BiS 2
journal, March 2013

  • Demura, Satoshi; Mizuguchi, Yoshikazu; Deguchi, Keita
  • Journal of the Physical Society of Japan, Vol. 82, Issue 3
  • DOI: 10.7566/JPSJ.82.033708

Superconductivity in the Narrow-Gap Semiconductor CsBi 4 Te 6
journal, September 2013

  • Malliakas, Christos D.; Chung, Duck Young; Claus, Helmut
  • Journal of the American Chemical Society, Vol. 135, Issue 39
  • DOI: 10.1021/ja407530u

Possible highT c superconductivity in the Ba?La?Cu?O system
journal, June 1986

  • Bednorz, J. G.; M�ller, K. A.
  • Zeitschrift f�r Physik B Condensed Matter, Vol. 64, Issue 2
  • DOI: 10.1007/BF01303701

Superconductivity at 93 K in a new mixed-phase Y-Ba-Cu-O compound system at ambient pressure
journal, March 1987

A superconducting copper oxide compound with electrons as the charge carriers
journal, January 1989

  • Tokura, Y.; Takagi, H.; Uchida, S.
  • Nature, Vol. 337, Issue 6205
  • DOI: 10.1038/337345a0

Iron-Based Layered Superconductor La[O 1- x F x ]FeAs ( x = 0.05−0.12) with T c = 26 K
journal, March 2008

  • Kamihara, Yoichi; Watanabe, Takumi; Hirano, Masahiro
  • Journal of the American Chemical Society, Vol. 130, Issue 11
  • DOI: 10.1021/ja800073m

High-temperature superconductivity in iron-based materials
journal, August 2010

  • Paglione, Johnpierre; Greene, Richard L.
  • Nature Physics, Vol. 6, Issue 9
  • DOI: 10.1038/nphys1759

Systeme La2S3Bi2S3. Phases intermediaires diagramme de phase
journal, January 1988

Phase Diagrams of the Systems CuBiS2-LnBiS3 (Ln = La, Nd)
journal, September 2005

Phase equilibria in the La2S3-Bi2S3-La2O3 ternary system
journal, April 2010

  • Bakhtiyarly, I. B.; Neimatova, A. V.; Mamedov, F. M.
  • Russian Journal of Inorganic Chemistry, Vol. 55, Issue 4
  • DOI: 10.1134/S0036023610040200

A short history of SHELX
journal, December 2007

  • Sheldrick, George M.
  • Acta Crystallographica Section A Foundations of Crystallography, Vol. 64, Issue 1, p. 112-122
  • DOI: 10.1107/S0108767307043930

EXPGUI , a graphical user interface for GSAS
journal, April 2001

Heat Capacity Measurements on Small Samples at Low Temperatures
journal, February 1972

  • Bachmann, R.; DiSalvo, F. J.; Geballe, T. H.
  • Review of Scientific Instruments, Vol. 43, Issue 2
  • DOI: 10.1063/1.1685596

Measurement of Seebeck coefficient using a large thermal gradient
journal, June 1988

  • Wood, C.; Chmielewski, A.; Zoltan, D.
  • Review of Scientific Instruments, Vol. 59, Issue 6, p. 951-954
  • DOI: 10.1063/1.1139756

Accurate Band Gaps of Semiconductors and Insulators with a Semilocal Exchange-Correlation Potential
journal, June 2009

Synthesis and Thermoelectric Properties of the New Ternary Bismuth Sulfides KBi 6.33 S 10 and K 2 Bi 8 S 13
journal, January 1996

  • Kanatzidis, Mercouri G.; McCarthy, Timothy J.; Tanzer, Troy A.
  • Chemistry of Materials, Vol. 8, Issue 7
  • DOI: 10.1021/cm9600182

Molten salt synthesis and properties of three new solid-state ternary bismuth chalcogenides, .beta.-CsBiS2, .gamma.-CsBiS2, and K2Bi8Se13
journal, March 1993

  • McCarthy, Timothy J.; Ngeyi, Stanley Pierre; Liao, Ju Hsiou
  • Chemistry of Materials, Vol. 5, Issue 3
  • DOI: 10.1021/cm00027a016

Modular Construction of A 1+ x M 4 - 2 x M‘ 7+ x Se 15 (A = K, Rb; M = Pb, Sn; M‘ = Bi, Sb):  A New Class of Solid State Quaternary Thermoelectric Compounds
journal, March 2001

  • Choi, Kyoung-Shin; Chung, Duck-Young; Mrotzek, Antje
  • Chemistry of Materials, Vol. 13, Issue 3
  • DOI: 10.1021/cm0003323

Synthesis, Structure, and Electronic Structure of the Ternary Sulfide La 7 Sb 9 S 24
journal, February 2006

  • Assoud, Abdeljalil; Kleinke, Katja M.; Kleinke, Holger
  • Chemistry of Materials, Vol. 18, Issue 4
  • DOI: 10.1021/cm052254v

Tellurium-Free Thermoelectric: The Anisotropic n-Type Semiconductor Bi2S3
journal, March 2012

  • Biswas, Kanishka; Zhao, Li-Dong; Kanatzidis, Mercouri G.
  • Advanced Energy Materials, Vol. 2, Issue 6
  • DOI: 10.1002/aenm.201100775
    Sort by:
    [ × clear filter / sort ]

    Works referencing / citing this record:

    Experimental Study of the Tl4PbTe3-Tl9TbTe6-Tl9BiTe6 Section of the Tl-Pb-Bi-Tb-Te System
    journal, January 2018

    Enhanced thermoelectric properties of Bi 2 S 3 polycrystals through an electroless nickel plating process
    journal, January 2019

    • Chang, Yi; Yang, Qiong-Lian; Guo, Jun
    • RSC Advances, Vol. 9, Issue 40
    • DOI: 10.1039/c9ra04653d
      Sort by:
      [ × clear filter / sort ]

      Similar Records in DOE PAGES and OSTI.GOV collections: