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Title: La 1–x Bi 1+x S 3 ( x ≈ 0.08): An n-Type Semiconductor

Journal Article · · Inorganic Chemistry

The new bismuth chalcogenide LaBiS3 crystallizes in the monoclinic space group C2/m with a = 27.997(5) Å, b = 4.0663(4) Å, c = 14.747(3) Å, and β = 118.55(3)°. The structure of LaBiS3 is built up of NaCl-type Bi2S5 blocks, and BiS4 and LaS5 infinitely long chains forming a compact three-dimensional framework. Optical spectroscopy and resistivity measurements reveal a semiconducting behavior with a direct band gap of 1.08(2) eV and activation energy of 0.36(1) eV. Thermopower measurements suggest the majority carriers of LaBiS3 are electrons. Heat capacity measurement indicates no phase transition from 2 to 300 K. Band structure calculations at the density function level support the presence of a direct band gap in LaBiS3.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
DOE Contract Number:
AC02-06CH11357
OSTI ID:
1391947
Journal Information:
Inorganic Chemistry, Vol. 55, Issue 7; ISSN 0020-1669
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English

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Cited By (2)

Experimental Study of the Tl4PbTe3-Tl9TbTe6-Tl9BiTe6 Section of the Tl-Pb-Bi-Tb-Te System journal January 2018
Enhanced thermoelectric properties of Bi 2 S 3 polycrystals through an electroless nickel plating process journal January 2019

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