Infrared absorption and visible transparency in heavily doped p-type BaSnO3
Abstract
The recent experimental work shows that perovskite BaSnO3 can be heavily doped by K to become a stable p-type semiconductor. Here, we find that p-type perovskite BaSnO3 retains transparency for visible light while absorbing strongly in the infrared below 1.5 eV. The origin of the remarkable optical transparency even with heavy doping is that the interband transitions that are enabled by empty states at the top of the valence band are concentrated mainly in the energy range from 0.5 to 1.5 eV, i.e., not extending past the near IR. In contrast to n-type, the Burstein-Moss shift is slightly negative, but very small reflecting the heavier valence bands relative to the conduction bands.
- Publication Date:
- Research Org.:
- Univ. of Missouri, Columbia, MO (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1399687
- Alternate Identifier(s):
- OSTI ID: 1351029
- Grant/Contract Number:
- SC0014607
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 110; Journal Issue: 5; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Transparent conductor
Citation Formats
Li, Yuwei, Sun, Jifeng, and Singh, David J. Infrared absorption and visible transparency in heavily doped p-type BaSnO3. United States: N. p., 2017.
Web. doi:10.1063/1.4975686.
Li, Yuwei, Sun, Jifeng, & Singh, David J. Infrared absorption and visible transparency in heavily doped p-type BaSnO3. United States. https://doi.org/10.1063/1.4975686
Li, Yuwei, Sun, Jifeng, and Singh, David J. Mon .
"Infrared absorption and visible transparency in heavily doped p-type BaSnO3". United States. https://doi.org/10.1063/1.4975686. https://www.osti.gov/servlets/purl/1399687.
@article{osti_1399687,
title = {Infrared absorption and visible transparency in heavily doped p-type BaSnO3},
author = {Li, Yuwei and Sun, Jifeng and Singh, David J.},
abstractNote = {The recent experimental work shows that perovskite BaSnO3 can be heavily doped by K to become a stable p-type semiconductor. Here, we find that p-type perovskite BaSnO3 retains transparency for visible light while absorbing strongly in the infrared below 1.5 eV. The origin of the remarkable optical transparency even with heavy doping is that the interband transitions that are enabled by empty states at the top of the valence band are concentrated mainly in the energy range from 0.5 to 1.5 eV, i.e., not extending past the near IR. In contrast to n-type, the Burstein-Moss shift is slightly negative, but very small reflecting the heavier valence bands relative to the conduction bands.},
doi = {10.1063/1.4975686},
journal = {Applied Physics Letters},
number = 5,
volume = 110,
place = {United States},
year = {Mon Jan 30 00:00:00 EST 2017},
month = {Mon Jan 30 00:00:00 EST 2017}
}
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