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Title: Band alignment at epitaxial BaSnO{sub 3}/SrTiO{sub 3}(001) and BaSnO{sub 3}/LaAlO{sub 3}(001) heterojunctions

Abstract

We have spectroscopically determined the optical bandgaps and band offsets at epitaxial interfaces of BaSnO{sub 3} with SrTiO{sub 3}(001) and LaAlO{sub 3}(001). 28 u.c. BaSnO{sub 3} epitaxial films exhibit direct and indirect bandgaps of 3.56 ± 0.05 eV and 2.93 ± 0.05 eV, respectively. The lack of a significant Burstein-Moss shift corroborates the highly insulating, defect-free nature of the BaSnO{sub 3} films. The conduction band minimum is lower in electron energy in 5 u.c. films of BaSnO{sub 3} than in SrTiO{sub 3} and LaAlO{sub 3} by 0.4 ± 0.2 eV and 3.7 ± 0.2 eV, respectively. This result bodes well for the realization of oxide-based, high-mobility, two-dimensional electron systems that can operate at ambient temperature, since electrons generated in the SrTiO{sub 3} by modulation doping, or at the BaSnO{sub 3}/LaAlO{sub 3} interface by polarization doping, can be transferred to and at least partially confined in the BaSnO{sub 3} film.

Authors:
;  [1]; ;  [2];  [3]
  1. Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)
  2. Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455 (United States)
  3. Characterization Facility, University of Minnesota, Minneapolis, Minnesota 55455 (United States)
Publication Date:
OSTI Identifier:
22591561
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 15; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALIGNMENT; ALUMINATES; AMBIENT TEMPERATURE; EPITAXY; FILMS; HETEROJUNCTIONS; INTERFACES; LANTHANUM COMPOUNDS; MODULATION; OXIDES; POLARIZATION; STRONTIUM TITANATES

Citation Formats

Chambers, Scott A., E-mail: sa.chambers@pnnl.gov, E-mail: bjalan@umn.edu, Kaspar, Tiffany C., Prakash, Abhinav, Jalan, Bharat, E-mail: sa.chambers@pnnl.gov, E-mail: bjalan@umn.edu, and Haugstad, Greg. Band alignment at epitaxial BaSnO{sub 3}/SrTiO{sub 3}(001) and BaSnO{sub 3}/LaAlO{sub 3}(001) heterojunctions. United States: N. p., 2016. Web. doi:10.1063/1.4946762.
Chambers, Scott A., E-mail: sa.chambers@pnnl.gov, E-mail: bjalan@umn.edu, Kaspar, Tiffany C., Prakash, Abhinav, Jalan, Bharat, E-mail: sa.chambers@pnnl.gov, E-mail: bjalan@umn.edu, & Haugstad, Greg. Band alignment at epitaxial BaSnO{sub 3}/SrTiO{sub 3}(001) and BaSnO{sub 3}/LaAlO{sub 3}(001) heterojunctions. United States. doi:10.1063/1.4946762.
Chambers, Scott A., E-mail: sa.chambers@pnnl.gov, E-mail: bjalan@umn.edu, Kaspar, Tiffany C., Prakash, Abhinav, Jalan, Bharat, E-mail: sa.chambers@pnnl.gov, E-mail: bjalan@umn.edu, and Haugstad, Greg. Mon . "Band alignment at epitaxial BaSnO{sub 3}/SrTiO{sub 3}(001) and BaSnO{sub 3}/LaAlO{sub 3}(001) heterojunctions". United States. doi:10.1063/1.4946762.
@article{osti_22591561,
title = {Band alignment at epitaxial BaSnO{sub 3}/SrTiO{sub 3}(001) and BaSnO{sub 3}/LaAlO{sub 3}(001) heterojunctions},
author = {Chambers, Scott A., E-mail: sa.chambers@pnnl.gov, E-mail: bjalan@umn.edu and Kaspar, Tiffany C. and Prakash, Abhinav and Jalan, Bharat, E-mail: sa.chambers@pnnl.gov, E-mail: bjalan@umn.edu and Haugstad, Greg},
abstractNote = {We have spectroscopically determined the optical bandgaps and band offsets at epitaxial interfaces of BaSnO{sub 3} with SrTiO{sub 3}(001) and LaAlO{sub 3}(001). 28 u.c. BaSnO{sub 3} epitaxial films exhibit direct and indirect bandgaps of 3.56 ± 0.05 eV and 2.93 ± 0.05 eV, respectively. The lack of a significant Burstein-Moss shift corroborates the highly insulating, defect-free nature of the BaSnO{sub 3} films. The conduction band minimum is lower in electron energy in 5 u.c. films of BaSnO{sub 3} than in SrTiO{sub 3} and LaAlO{sub 3} by 0.4 ± 0.2 eV and 3.7 ± 0.2 eV, respectively. This result bodes well for the realization of oxide-based, high-mobility, two-dimensional electron systems that can operate at ambient temperature, since electrons generated in the SrTiO{sub 3} by modulation doping, or at the BaSnO{sub 3}/LaAlO{sub 3} interface by polarization doping, can be transferred to and at least partially confined in the BaSnO{sub 3} film.},
doi = {10.1063/1.4946762},
journal = {Applied Physics Letters},
number = 15,
volume = 108,
place = {United States},
year = {Mon Apr 11 00:00:00 EDT 2016},
month = {Mon Apr 11 00:00:00 EDT 2016}
}