DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Order of magnitude enhancement of monolayer MoS2 photoluminescence due to near-field energy influx from nanocrystal films

Abstract

Two-dimensional transition metal dichalcogenides (TMDCs) like MoS2 are promising candidates for various optoelectronic applications. The typical photoluminescence (PL) of monolayer MoS2 is however known to suffer very low quantum yields. We demonstrate a 10-fold increase of MoS2 excitonic PL enabled by nonradiative energy transfer (NRET) from adjacent nanocrystal quantum dot (NQD) films. The understanding of this effect is facilitated by our application of transient absorption (TA) spectroscopy to monitor the energy influx into the monolayer MoS2 in the process of ET from photoexcited CdSe/ZnS nanocrystals. In contrast to PL spectroscopy, TA can detect even non-emissive excitons, and we register an order of magnitude enhancement of the MoS2 excitonic TA signatures in hybrids with NQDs. The appearance of ET-induced nanosecond-scale kinetics in TA features is consistent with PL dynamics of energy-accepting MoS2 and PL quenching data of the energy-donating NQDs. The observed enhancement is attributed to the reduction of recombination losses for excitons gradually transferred into MoS2 under quasi-resonant conditions as compared with their direct photoproduction. Furthermore, the TA and PL data clearly illustrate the efficacy of MoS2 and likely other TMDC materials as energy acceptors and the possibility of their practical utilization in NRET-coupled hybrid nanostructures.

Authors:
 [1];  [1];  [2];  [2];  [1];  [1];  [1];  [1]
  1. The Univ. of Texas at Dallas, Richardson, TX (United States)
  2. The Pennsylvania State Univ., University Park, PA (United States)
Publication Date:
Research Org.:
The Univ. of Texas at Dallas, Richardson, TX (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1347434
Grant/Contract Number:  
SC0010697
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 7; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; quantum dots; two-dimensional materials

Citation Formats

Guo, Tianle, Sampat, Siddharth, Zhang, Kehao, Robinson, Joshua A., Rupich, Sara M., Chabal, Yves J., Gartstein, Yuri N., and Malko, Anton V. Order of magnitude enhancement of monolayer MoS2 photoluminescence due to near-field energy influx from nanocrystal films. United States: N. p., 2017. Web. doi:10.1038/srep41967.
Guo, Tianle, Sampat, Siddharth, Zhang, Kehao, Robinson, Joshua A., Rupich, Sara M., Chabal, Yves J., Gartstein, Yuri N., & Malko, Anton V. Order of magnitude enhancement of monolayer MoS2 photoluminescence due to near-field energy influx from nanocrystal films. United States. https://doi.org/10.1038/srep41967
Guo, Tianle, Sampat, Siddharth, Zhang, Kehao, Robinson, Joshua A., Rupich, Sara M., Chabal, Yves J., Gartstein, Yuri N., and Malko, Anton V. Fri . "Order of magnitude enhancement of monolayer MoS2 photoluminescence due to near-field energy influx from nanocrystal films". United States. https://doi.org/10.1038/srep41967. https://www.osti.gov/servlets/purl/1347434.
@article{osti_1347434,
title = {Order of magnitude enhancement of monolayer MoS2 photoluminescence due to near-field energy influx from nanocrystal films},
author = {Guo, Tianle and Sampat, Siddharth and Zhang, Kehao and Robinson, Joshua A. and Rupich, Sara M. and Chabal, Yves J. and Gartstein, Yuri N. and Malko, Anton V.},
abstractNote = {Two-dimensional transition metal dichalcogenides (TMDCs) like MoS2 are promising candidates for various optoelectronic applications. The typical photoluminescence (PL) of monolayer MoS2 is however known to suffer very low quantum yields. We demonstrate a 10-fold increase of MoS2 excitonic PL enabled by nonradiative energy transfer (NRET) from adjacent nanocrystal quantum dot (NQD) films. The understanding of this effect is facilitated by our application of transient absorption (TA) spectroscopy to monitor the energy influx into the monolayer MoS2 in the process of ET from photoexcited CdSe/ZnS nanocrystals. In contrast to PL spectroscopy, TA can detect even non-emissive excitons, and we register an order of magnitude enhancement of the MoS2 excitonic TA signatures in hybrids with NQDs. The appearance of ET-induced nanosecond-scale kinetics in TA features is consistent with PL dynamics of energy-accepting MoS2 and PL quenching data of the energy-donating NQDs. The observed enhancement is attributed to the reduction of recombination losses for excitons gradually transferred into MoS2 under quasi-resonant conditions as compared with their direct photoproduction. Furthermore, the TA and PL data clearly illustrate the efficacy of MoS2 and likely other TMDC materials as energy acceptors and the possibility of their practical utilization in NRET-coupled hybrid nanostructures.},
doi = {10.1038/srep41967},
journal = {Scientific Reports},
number = ,
volume = 7,
place = {United States},
year = {Fri Feb 03 00:00:00 EST 2017},
month = {Fri Feb 03 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 12 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010


Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
journal, November 2012

  • Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras
  • Nature Nanotechnology, Vol. 7, Issue 11, p. 699-712
  • DOI: 10.1038/nnano.2012.193

Extraordinary attributes of 2-dimensional MoS2 nanosheets
journal, August 2014


Two-dimensional dichalcogenides for light-harvesting applications
journal, April 2015


Valley excitons in two-dimensional semiconductors
journal, December 2014

  • Yu, Hongyi; Cui, Xiaodong; Xu, Xiaodong
  • National Science Review, Vol. 2, Issue 1
  • DOI: 10.1093/nsr/nwu078

Emerging Photoluminescence in Monolayer MoS2
journal, April 2010

  • Splendiani, Andrea; Sun, Liang; Zhang, Yuanbo
  • Nano Letters, Vol. 10, Issue 4, p. 1271-1275
  • DOI: 10.1021/nl903868w

Electroluminescence in Single Layer MoS2
journal, March 2013

  • Sundaram, R. S.; Engel, M.; Lombardo, A.
  • Nano Letters, Vol. 13, Issue 4, p. 1416-1421
  • DOI: 10.1021/nl400516a

Ultrafast Dynamics of Defect-Assisted Electron–Hole Recombination in Monolayer MoS 2
journal, December 2014

  • Wang, Haining; Zhang, Changjian; Rana, Farhan
  • Nano Letters, Vol. 15, Issue 1
  • DOI: 10.1021/nl503636c

Photocarrier relaxation pathway in two-dimensional semiconducting transition metal dichalcogenides
journal, July 2014

  • Kozawa, Daichi; Kumar, Rajeev; Carvalho, Alexandra
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms5543

Near-unity photoluminescence quantum yield in MoS2
journal, November 2015


Hybrid Resonant Organic–Inorganic Nanostructures for Optoelectronic Applications
journal, September 2011

  • Agranovich, V. M.; Gartstein, Yu. N.; Litinskaya, M.
  • Chemical Reviews, Vol. 111, Issue 9
  • DOI: 10.1021/cr100156x

New light from hybrid inorganic–organic emitters
journal, April 2008


Silicon Surface Modification and Characterization for Emergent Photovoltaic Applications Based on Energy Transfer
journal, August 2015


Plasmonic Nanostructure Design for Efficient Light Coupling into Solar Cells
journal, December 2008

  • Ferry, Vivian E.; Sweatlock, Luke A.; Pacifici, Domenico
  • Nano Letters, Vol. 8, Issue 12
  • DOI: 10.1021/nl8022548

Plasmonics for improved photovoltaic devices
journal, February 2010

  • Atwater, Harry A.; Polman, Albert
  • Nature Materials, Vol. 9, Issue 3, p. 205-213
  • DOI: 10.1038/nmat2629

Controlled Deposition and Spectroscopic Signatures of Ordered Multilayer Nanocrystal Assemblies for Optoelectronic Applications
journal, December 2015

  • Rupich, Sara M.; Gartstein, Yuri N.; Malko, Anton V.
  • Advanced Optical Materials, Vol. 4, Issue 3
  • DOI: 10.1002/adom.201500492

Reduced Dielectric Screening and Enhanced Energy Transfer in Single- and Few-Layer MoS 2
journal, October 2014

  • Prins, Ferry; Goodman, Aaron J.; Tisdale, William A.
  • Nano Letters, Vol. 14, Issue 11
  • DOI: 10.1021/nl5019386

Electrical Control of near-Field Energy Transfer between Quantum Dots and Two-Dimensional Semiconductors
journal, June 2015


Exciton polaritons in transition-metal dichalcogenides and their direct excitation via energy transfer
journal, August 2015


Distance-dependent energy transfer between CdSe/CdS quantum dots and a two-dimensional semiconductor
journal, January 2016

  • Goodfellow, Kenneth M.; Chakraborty, Chitraleema; Sowers, Kelly
  • Applied Physics Letters, Vol. 108, Issue 2
  • DOI: 10.1063/1.4939845

Exciton and Trion Energy Transfer from Giant Semiconductor Nanocrystals to MoS 2 Monolayers
journal, March 2016


Energy Transfer from Quantum Dots to Graphene and MoS 2 : The Role of Absorption and Screening in Two-Dimensional Materials
journal, March 2016


Nonradiative Energy Transfer from Individual CdSe/ZnS Quantum Dots to Single-Layer and Few-Layer Tin Disulfide
journal, April 2016


Anisotropic Optical Properties of Thin-Film Thiacarbocyanine Dye Aggregates
journal, September 2013

  • Roodenko, K.; Nguyen, H. M.; Caillard, L.
  • The Journal of Physical Chemistry C, Vol. 117, Issue 39
  • DOI: 10.1021/jp407056t

Fluorescence near interfaces: The role of photonic mode density
journal, April 1998


Energy transfer with semiconductor nanocrystals
journal, January 2009

  • Rogach, Andrey L.; Klar, Thomas A.; Lupton, John M.
  • J. Mater. Chem., Vol. 19, Issue 9
  • DOI: 10.1039/B812884G

Super-Efficient Exciton Funneling in Layer-by-Layer Semiconductor Nanocrystal Structures
journal, March 2005


Efficient Directed Energy Transfer through Size-Gradient Nanocrystal Layers into Silicon Substrates
journal, May 2014

  • De Benedetti, William J. I.; Nimmo, Michael T.; Rupich, Sara M.
  • Advanced Functional Materials, Vol. 24, Issue 31
  • DOI: 10.1002/adfm.201400667

Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures
journal, August 2014

  • Hong, Xiaoping; Kim, Jonghwan; Shi, Su-Fei
  • Nature Nanotechnology, Vol. 9, Issue 9
  • DOI: 10.1038/nnano.2014.167

Synthesis and Micrometer-Scale Assembly of Colloidal CdSe/CdS Nanorods Prepared by a Seeded Growth Approach
journal, October 2007

  • Carbone, Luigi; Nobile, Concetta; De Giorgi, Milena
  • Nano Letters, Vol. 7, Issue 10
  • DOI: 10.1021/nl0717661

Large-Scale Synthesis of Nearly Monodisperse CdSe/CdS Core/Shell Nanocrystals Using Air-Stable Reagents via Successive Ion Layer Adsorption and Reaction
journal, October 2003

  • Li, J. Jack; Wang, Y. Andrew; Guo, Wenzhuo
  • Journal of the American Chemical Society, Vol. 125, Issue 41, p. 12567-12575
  • DOI: 10.1021/ja0363563

Synthesis and Characterization of Highly Luminescent CdSe−Core CdS/Zn 0.5 Cd 0.5 S/ZnS Multishell Nanocrystals
journal, May 2005

  • Xie, Renguo; Kolb, Ute; Li, Jixue
  • Journal of the American Chemical Society, Vol. 127, Issue 20
  • DOI: 10.1021/ja042939g

Efficient Radiative and Nonradiative Energy Transfer from Proximal CdSe/ZnS Nanocrystals into Silicon Nanomembranes
journal, May 2012

  • Nguyen, Hue M.; Seitz, Oliver; Peng, Weina
  • ACS Nano, Vol. 6, Issue 6
  • DOI: 10.1021/nn301531b

Quantization of Multiparticle Auger Rates in Semiconductor Quantum Dots
journal, February 2000


Photo-Induced Bandgap Renormalization Governs the Ultrafast Response of Single-Layer MoS 2
journal, December 2015

  • Pogna, Eva A. A.; Marsili, Margherita; De Fazio, Domenico
  • ACS Nano, Vol. 10, Issue 1
  • DOI: 10.1021/acsnano.5b06488

Efficient Excitonic Photoluminescence in Direct and Indirect Band Gap Monolayer MoS 2
journal, September 2015


Local field effects for spherical quantum dot emitters in the proximity of a planar dielectric interface
journal, January 2014

  • Gordon, J. M.; Gartstein, Y. N.
  • Journal of the Optical Society of America B, Vol. 31, Issue 9
  • DOI: 10.1364/JOSAB.31.002029

Silicon Surface Modification and Characterization for Emergent Photovoltaic Applications Based on Energy Transfer
journal, August 2015


Efficient Excitonic Photoluminescence in Direct and Indirect Band Gap Monolayer MoS 2
journal, September 2015


Nonradiative Energy Transfer from Individual CdSe/ZnS Quantum Dots to Single-Layer and Few-Layer Tin Disulfide
journal, April 2016


Hybrid Resonant Organic–Inorganic Nanostructures for Optoelectronic Applications
journal, September 2011

  • Agranovich, V. M.; Gartstein, Yu. N.; Litinskaya, M.
  • Chemical Reviews, Vol. 111, Issue 9
  • DOI: 10.1021/cr100156x

Large-Scale Synthesis of Nearly Monodisperse CdSe/CdS Core/Shell Nanocrystals Using Air-Stable Reagents via Successive Ion Layer Adsorption and Reaction
journal, October 2003

  • Li, J. Jack; Wang, Y. Andrew; Guo, Wenzhuo
  • Journal of the American Chemical Society, Vol. 125, Issue 41, p. 12567-12575
  • DOI: 10.1021/ja0363563

Synthesis and Micrometer-Scale Assembly of Colloidal CdSe/CdS Nanorods Prepared by a Seeded Growth Approach
journal, October 2007

  • Carbone, Luigi; Nobile, Concetta; De Giorgi, Milena
  • Nano Letters, Vol. 7, Issue 10
  • DOI: 10.1021/nl0717661

Electroluminescence in Single Layer MoS2
journal, March 2013

  • Sundaram, R. S.; Engel, M.; Lombardo, A.
  • Nano Letters, Vol. 13, Issue 4, p. 1416-1421
  • DOI: 10.1021/nl400516a

Plasmonic Nanostructure Design for Efficient Light Coupling into Solar Cells
journal, December 2008

  • Ferry, Vivian E.; Sweatlock, Luke A.; Pacifici, Domenico
  • Nano Letters, Vol. 8, Issue 12
  • DOI: 10.1021/nl8022548

Emerging Photoluminescence in Monolayer MoS2
journal, April 2010

  • Splendiani, Andrea; Sun, Liang; Zhang, Yuanbo
  • Nano Letters, Vol. 10, Issue 4, p. 1271-1275
  • DOI: 10.1021/nl903868w

Efficient Radiative and Nonradiative Energy Transfer from Proximal CdSe/ZnS Nanocrystals into Silicon Nanomembranes
journal, May 2012

  • Nguyen, Hue M.; Seitz, Oliver; Peng, Weina
  • ACS Nano, Vol. 6, Issue 6
  • DOI: 10.1021/nn301531b

Photocarrier relaxation pathway in two-dimensional semiconducting transition metal dichalcogenides
journal, July 2014

  • Kozawa, Daichi; Kumar, Rajeev; Carvalho, Alexandra
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms5543

Plasmonics for improved photovoltaic devices
journal, February 2010

  • Atwater, Harry A.; Polman, Albert
  • Nature Materials, Vol. 9, Issue 3, p. 205-213
  • DOI: 10.1038/nmat2629

Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
journal, January 2015

  • Ferrari, Andrea C.; Bonaccorso, Francesco; Fal'ko, Vladimir
  • Nanoscale, Vol. 7, Issue 11
  • DOI: 10.1039/c4nr01600a

Quantization of Multiparticle Auger Rates in Semiconductor Quantum Dots
journal, February 2000


Photo-Induced Bandgap Renormalization Governs the Ultrafast Response of Single-Layer MoS2
text, January 2017


Works referencing / citing this record:

Controllable Interlayer Charge and Energy Transfer in Perovskite Quantum Dots/ Transition Metal Dichalcogenide Heterostructures
journal, September 2019

  • Liu, Huan; Wang, Chong; Wang, Ting
  • Advanced Materials Interfaces, Vol. 6, Issue 23
  • DOI: 10.1002/admi.201901263

Environmental engineering of transition metal dichalcogenide optoelectronics
journal, June 2018

  • LaMountain, Trevor; Lenferink, Erik J.; Chen, Yen-Jung
  • Frontiers of Physics, Vol. 13, Issue 4
  • DOI: 10.1007/s11467-018-0795-x

Microsecond charge separation at heterojunctions between transition metal dichalcogenide monolayers and single-walled carbon nanotubes
journal, January 2019

  • Sulas-Kern, Dana B.; Zhang, Hanyu; Li, Zhaodong
  • Materials Horizons, Vol. 6, Issue 10
  • DOI: 10.1039/c9mh00954j

Size-dependent optical properties of MoS 2 nanoparticles and their photo-catalytic applications
journal, January 2020

  • Bhattacharya, Didhiti; Mukherjee, Subhrajit; Mitra, Rajib Kumar
  • Nanotechnology, Vol. 31, Issue 14
  • DOI: 10.1088/1361-6528/ab61ce

Guiding and binding of cavity photons with patterned two-dimensional semiconductors
journal, January 2018