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Title: High Luminescence Efficiency in MoS2 Grown by Chemical Vapor Deposition

Abstract

We report that one of the major challenges facing the rapidly growing field of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is the development of growth techniques to enable large-area synthesis of high-quality materials. Chemical vapor deposition (CVD) is one of the leading techniques for the synthesis of TMDCs; however, the quality of the material produced is limited by defects formed during the growth process. A very useful nondestructive technique that can be utilized to probe defects in semiconductors is the room-temperature photoluminescence (PL) quantum yield (QY). It was recently demonstrated that a PL QY near 100% can be obtained in MoS2 and WS2 monolayers prepared by micromechanical exfoliation by treating samples with an organic superacid: bis(trifluoromethane)sulfonimide (TFSI). Here we have performed a thorough exploration of this chemical treatment on CVD-grown MoS2 samples. We find that the as-grown monolayers must be transferred to a secondary substrate, which releases strain, to obtain high QY by TFSI treatment. Furthermore, we find that the sulfur precursor temperature during synthesis of the MoS2 plays a critical role in the effectiveness of the treatment. By satisfying the aforementioned conditions we show that the PL QY of CVD-grown monolayers can be improved from ~0.1% in the as-grownmore » case to ~30% after treatment, with enhancement factors ranging from 100 to 1500× depending on the initial monolayer quality. We also found that after TFSI treatment the PL emission from MoS2 films was visible by eye despite the low absorption (5–10%). Lastly, the discovery of an effective passivation strategy will speed the development of scalable high-performance optoelectronic and electronic devices based on MoS2.« less

Authors:
 [1];  [2];  [3];  [1];  [1];  [4];  [1];  [1];  [5];  [1];  [3];  [2];  [1]
  1. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  2. Army Research Lab., Adelphi, MD (United States)
  3. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  4. Univ. of California, Berkeley, CA (United States)
  5. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Publication Date:
Research Org.:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1557789
Grant/Contract Number:  
SC0001088; AC02-05CH11231; SC0004993
Resource Type:
Accepted Manuscript
Journal Name:
ACS Nano
Additional Journal Information:
Journal Volume: 10; Journal Issue: 7; Journal ID: ISSN 1936-0851
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; transition metal dichalcogenide; MoS2; chemical vapor deposition; quantum yield; radiative lifetime; biexcitonic recombination

Citation Formats

Amani, Matin, Burke, Robert A., Ji, Xiang, Zhao, Peida, Lien, Der-Hsien, Taheri, Peyman, Ahn, Geun Ho, Kirya, Daisuke, Ager, Joel W., Yablonovitch, Eli, Kong, Jing, Dubey, Madan, and Javey, Ali. High Luminescence Efficiency in MoS2 Grown by Chemical Vapor Deposition. United States: N. p., 2016. Web. https://doi.org/10.1021/acsnano.6b03443.
Amani, Matin, Burke, Robert A., Ji, Xiang, Zhao, Peida, Lien, Der-Hsien, Taheri, Peyman, Ahn, Geun Ho, Kirya, Daisuke, Ager, Joel W., Yablonovitch, Eli, Kong, Jing, Dubey, Madan, & Javey, Ali. High Luminescence Efficiency in MoS2 Grown by Chemical Vapor Deposition. United States. https://doi.org/10.1021/acsnano.6b03443
Amani, Matin, Burke, Robert A., Ji, Xiang, Zhao, Peida, Lien, Der-Hsien, Taheri, Peyman, Ahn, Geun Ho, Kirya, Daisuke, Ager, Joel W., Yablonovitch, Eli, Kong, Jing, Dubey, Madan, and Javey, Ali. Sat . "High Luminescence Efficiency in MoS2 Grown by Chemical Vapor Deposition". United States. https://doi.org/10.1021/acsnano.6b03443. https://www.osti.gov/servlets/purl/1557789.
@article{osti_1557789,
title = {High Luminescence Efficiency in MoS2 Grown by Chemical Vapor Deposition},
author = {Amani, Matin and Burke, Robert A. and Ji, Xiang and Zhao, Peida and Lien, Der-Hsien and Taheri, Peyman and Ahn, Geun Ho and Kirya, Daisuke and Ager, Joel W. and Yablonovitch, Eli and Kong, Jing and Dubey, Madan and Javey, Ali},
abstractNote = {We report that one of the major challenges facing the rapidly growing field of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is the development of growth techniques to enable large-area synthesis of high-quality materials. Chemical vapor deposition (CVD) is one of the leading techniques for the synthesis of TMDCs; however, the quality of the material produced is limited by defects formed during the growth process. A very useful nondestructive technique that can be utilized to probe defects in semiconductors is the room-temperature photoluminescence (PL) quantum yield (QY). It was recently demonstrated that a PL QY near 100% can be obtained in MoS2 and WS2 monolayers prepared by micromechanical exfoliation by treating samples with an organic superacid: bis(trifluoromethane)sulfonimide (TFSI). Here we have performed a thorough exploration of this chemical treatment on CVD-grown MoS2 samples. We find that the as-grown monolayers must be transferred to a secondary substrate, which releases strain, to obtain high QY by TFSI treatment. Furthermore, we find that the sulfur precursor temperature during synthesis of the MoS2 plays a critical role in the effectiveness of the treatment. By satisfying the aforementioned conditions we show that the PL QY of CVD-grown monolayers can be improved from ~0.1% in the as-grown case to ~30% after treatment, with enhancement factors ranging from 100 to 1500× depending on the initial monolayer quality. We also found that after TFSI treatment the PL emission from MoS2 films was visible by eye despite the low absorption (5–10%). Lastly, the discovery of an effective passivation strategy will speed the development of scalable high-performance optoelectronic and electronic devices based on MoS2.},
doi = {10.1021/acsnano.6b03443},
journal = {ACS Nano},
number = 7,
volume = 10,
place = {United States},
year = {2016},
month = {6}
}

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