In-Situ Characterization of Potential-Induced Degradation in Crystalline Silicon Photovoltaic Modules Through Dark I–V Measurements

Luo, Wei; Hacke, Peter; Singh, Jai Prakash; Chai, Jing; Wang, Yan; Ramakrishna, Seeram; Aberle, Armin G.; Khoo, Yong Sheng

doi:10.1109/JPHOTOV.2016.2621352

Title: In-Situ Characterization of Potential-Induced Degradation in Crystalline Silicon Photovoltaic Modules Through Dark I–V Measurements

Abstract

Here, a temperature correction methodology for in-situ dark I-V(DIV) characterization of conventional p-type crystalline silicon photovoltaic (PV) modules undergoing potential-induced degradation (PID) is proposed.

Authors:

Luo, Wei ^[1]; Hacke, Peter ^[2]; Singh, Jai Prakash ^[1]; Chai, Jing ^[1]; Wang, Yan ^[1]; Ramakrishna, Seeram ^[1]; Aberle, Armin G. ^[1]; Khoo, Yong Sheng ^[1]

Solar Energy Research Institute of Singapore (Singapore)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

Publication Date:: Mon Nov 14 00:00:00 EST 2016

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

OSTI Identifier:: 1343086

Report Number(s):: NREL/JA-5J00-67339
Journal ID: ISSN 2156-3381

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Journal of Photovoltaics

Additional Journal Information:: Journal Volume: 7; Journal Issue: 1; Journal ID: ISSN 2156-3381

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; temperature correction; in-situ dark I-V (DIV) characterization; module power temperature coefficient; photovoltaic (PV) modules; potential-induced degradation (PID)

Citation Formats


                    Luo, Wei, Hacke, Peter, Singh, Jai Prakash, Chai, Jing, Wang, Yan, Ramakrishna, Seeram, Aberle, Armin G., and Khoo, Yong Sheng. In-Situ Characterization of Potential-Induced Degradation in Crystalline Silicon Photovoltaic Modules Through Dark I–V Measurements.  United States: N. p., 2016. 
Web.  doi:10.1109/JPHOTOV.2016.2621352.

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                    Luo, Wei, Hacke, Peter, Singh, Jai Prakash, Chai, Jing, Wang, Yan, Ramakrishna, Seeram, Aberle, Armin G., & Khoo, Yong Sheng. In-Situ Characterization of Potential-Induced Degradation in Crystalline Silicon Photovoltaic Modules Through Dark I–V Measurements.  United States.  https://doi.org/10.1109/JPHOTOV.2016.2621352

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                    Luo, Wei, Hacke, Peter, Singh, Jai Prakash, Chai, Jing, Wang, Yan, Ramakrishna, Seeram, Aberle, Armin G., and Khoo, Yong Sheng. Mon .  
"In-Situ Characterization of Potential-Induced Degradation in Crystalline Silicon Photovoltaic Modules Through Dark I–V Measurements".  United States.  https://doi.org/10.1109/JPHOTOV.2016.2621352.  https://www.osti.gov/servlets/purl/1343086.

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@article{osti_1343086,

  title        = {In-Situ Characterization of Potential-Induced Degradation in Crystalline Silicon Photovoltaic Modules Through Dark I–V Measurements},

  author       = {Luo, Wei and Hacke, Peter and Singh, Jai Prakash and Chai, Jing and Wang, Yan and Ramakrishna, Seeram and Aberle, Armin G. and Khoo, Yong Sheng},

  abstractNote = {Here, a temperature correction methodology for in-situ dark I-V(DIV) characterization of conventional p-type crystalline silicon photovoltaic (PV) modules undergoing potential-induced degradation (PID) is proposed.},

  doi          = {10.1109/JPHOTOV.2016.2621352},

  journal      = {IEEE Journal of Photovoltaics},

  number       = 1,

  volume       = 7,

  place        = {United States},

  year         = {Mon Nov 14 00:00:00 EST 2016},

  month        = {Mon Nov 14 00:00:00 EST 2016}

}

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https://doi.org/10.1109/JPHOTOV.2016.2621352

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Works referencing / citing this record:

The Study On Anti-PID Performance Of High Efficiency Bifacial Cell Module
journal, August 2019

Cai, Xia; Ni, Zhichun; Chen, Chengjin
IOP Conference Series: Materials Science and Engineering, Vol. 556
DOI: 10.1088/1757-899x/556/1/012033

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Title: In-Situ Characterization of Potential-Induced Degradation in Crystalline Silicon Photovoltaic Modules Through Dark I–V Measurements

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Citation Formats

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