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Title: Potential-induced degradation in photovoltaic modules: a critical review

Potential-induced degradation (PID) has received considerable attention in recent years due to its detrimental impact on photovoltaic (PV) module performance under field conditions. Both crystalline silicon (c-Si) and thin-film PV modules are susceptible to PID. While extensive studies have already been conducted in this area, the understanding of the PID phenomena is still incomplete and it remains a major problem in the PV industry. Herein, a critical review of the available literature is given to serve as a one-stop source for understanding the current status of PID research. This article also aims to provide an overview of future research paths to address PID-related issues. This paper consists of three parts. In the first part, the modelling of leakage current paths in the module package is discussed. The PID mechanisms in both c-Si and thin-film PV modules are also comprehensively reviewed. The second part summarizes various test methods to evaluate PV modules for PID. The last part focuses on studies related to PID in the omnipresent p-type c-Si PV modules. The dependence of temperature, humidity and voltage on the progression of PID is examined. Preventive measures against PID at the cell, module and system levels are illustrated. Moreover, PID recovery inmore » standard p-type c-Si PV modules is also studied. Most of the findings from p-type c-Si PV modules are also applicable to other PV module technologies.« less
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [4] ;  [3] ;  [2] ;  [2] ;  [2] ;  [5] ;  [1]
  1. National Univ. of Singapore (Singapore). Solar Energy Research Inst. of Singapore (SERIS); National Univ. of Singapore (Singapore). Dept. of Mechanical Engineering
  2. National Univ. of Singapore (Singapore). Solar Energy Research Inst. of Singapore (SERIS)
  3. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  4. Fraunhofer Center for Silicon-Photovoltaics CSP, Halle (Germany)
  5. National Univ. of Singapore (Singapore). Solar Energy Research Inst. of Singapore (SERIS); National Univ. of Singapore (Singapore). Dept. of Electrical and Computing Engineering
Publication Date:
Report Number(s):
NREL/JA-5J00-67341
Journal ID: ISSN 1754-5692; EESNBY
Grant/Contract Number:
AC36-08GO28308
Type:
Accepted Manuscript
Journal Name:
Energy & Environmental Science
Additional Journal Information:
Journal Volume: 10; Journal Issue: 1; Journal ID: ISSN 1754-5692
Publisher:
Royal Society of Chemistry
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 47 OTHER INSTRUMENTATION; leakage current; PID; potential-induced degradation; test methods; p-type c-Si modules
OSTI Identifier:
1343394