Optical emission diagnostics of plasmas in chemical vapor deposition of single-crystal diamond

Hemawan, Kadek W.; Hemley, Russell J.

doi:10.1116/1.4928031

Title: Optical emission diagnostics of plasmas in chemical vapor deposition of single-crystal diamond

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Abstract

Here, a key aspect of single crystal diamond growth via microwave plasma chemical vapor deposition is in-process control of the local plasma-substrate environment, that is, plasma gas phase concentrations of activated species at the plasma boundary layer near the substrate surface. Emission spectra of the plasma relative to the diamond substrate inside the microwave plasma reactor chamber have been analyzed via optical emission spectroscopy. The spectra of radical species such as CH, C₂, and H (Balmer series) important for diamond growth were found to be more depndent on operating pressure than on microwave power. Plasma gas temperatures were calculated from measurements of the C₂ Swan band (d³Π → a³Π transition) system. The plasma gas temperature ranges from 2800 to 3400 K depending on the spatial location of the plasma ball, microwave power and operating pressure. Addition of Ar into CH₄ + H₂ plasma input gas mixture has little influence on the Hα, Hβ, and Hγ intensities and single-crystal diamond growth rates.

Authors:

Hemawan, Kadek W. ^[1]; Hemley, Russell J. ^[1]

Carnegie Institution of Washington, Washington, D.C. (United States)

Publication Date:: Mon Aug 03 00:00:00 EDT 2015

Research Org.:: Carnegie Institution of Washington, Washington, D.C. (United States); Energy Frontier Research Centers (EFRC) (United States). Energy Frontier Research in Extreme Environments (EFree)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1335676

Alternate Identifier(s):: OSTI ID: 1420498

Grant/Contract Number:: NA0002006; SC0001057

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

Additional Journal Information:: Journal Volume: 33; Journal Issue: 6; Journal ID: ISSN 0734-2101

Publisher:: American Vacuum Society

Country of Publication:: United States

Language:: English

Subject:: 70 PLASMA PHYSICS AND FUSION TECHNOLOGY; microwave plasma; optical emission diagnostics; single-crystal diamond

Citation Formats


                    Hemawan, Kadek W., and Hemley, Russell J. Optical emission diagnostics of plasmas in chemical vapor deposition of single-crystal diamond.  United States: N. p., 2015. 
Web.  doi:10.1116/1.4928031.

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                    Hemawan, Kadek W., & Hemley, Russell J. Optical emission diagnostics of plasmas in chemical vapor deposition of single-crystal diamond.  United States.  https://doi.org/10.1116/1.4928031

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                    Hemawan, Kadek W., and Hemley, Russell J. Mon .  
"Optical emission diagnostics of plasmas in chemical vapor deposition of single-crystal diamond".  United States.  https://doi.org/10.1116/1.4928031.  https://www.osti.gov/servlets/purl/1335676.

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@article{osti_1335676,

  title        = {Optical emission diagnostics of plasmas in chemical vapor deposition of single-crystal diamond},

  author       = {Hemawan, Kadek W. and Hemley, Russell J.},

  abstractNote = {Here, a key aspect of single crystal diamond growth via microwave plasma chemical vapor deposition is in-process control of the local plasma-substrate environment, that is, plasma gas phase concentrations of activated species at the plasma boundary layer near the substrate surface. Emission spectra of the plasma relative to the diamond substrate inside the microwave plasma reactor chamber have been analyzed via optical emission spectroscopy. The spectra of radical species such as CH, C2, and H (Balmer series) important for diamond growth were found to be more depndent on operating pressure than on microwave power. Plasma gas temperatures were calculated from measurements of the C2 Swan band (d3Π → a3Π transition) system. The plasma gas temperature ranges from 2800 to 3400 K depending on the spatial location of the plasma ball, microwave power and operating pressure. Addition of Ar into CH4 + H2 plasma input gas mixture has little influence on the Hα, Hβ, and Hγ intensities and single-crystal diamond growth rates.},

  doi          = {10.1116/1.4928031},

  journal      = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},

  number       = 6,

  volume       = 33,

  place        = {United States},

  year         = {Mon Aug 03 00:00:00 EDT 2015},

  month        = {Mon Aug 03 00:00:00 EDT 2015}

}

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