Encapsulated silicene: A robust large-gap topological insulator

Kou, Liangzhi; Ma, Yandong; Yan, Binghai; Tan, Xin; Chen, Changfeng; Smith, Sean C.

doi:10.1021/acsami.5b05063

Title: Encapsulated silicene: A robust large-gap topological insulator

Journal Article · Thu Aug 20 04:00:00 UTC 2015 · ACS Applied Materials and Interfaces

DOI: https://doi.org/10.1021/acsami.5b05063 · OSTI ID:1332446

Kou, Liangzhi ^[1]; Ma, Yandong ^[2]; Yan, Binghai ^[3]; Tan, Xin ^[4]; Chen, Changfeng ^[5]; Smith, Sean C. ^[4]

Univ. of New South Wales, Sydney, NSW (Australia); UNLV
Jacobs Univ. Bremen, Bremen (Germany)
Max Planck Institute for Chemical Physics of Solids, Dresden (Germany)
Univ. of New South Wales, Sydney, NSW (Australia)
Univ. of Nevada, Las Vegas, NV (United States)

The quantum spin Hall (QSH) effect predicted in silicene has raised exciting prospects of new device applications compatible with current microelectronic technology. Efforts to explore this novel phenomenon, however, have been impeded by fundamental challenges imposed by silicene’s small topologically nontrivial band gap and fragile electronic properties susceptible to environmental degradation effects. Here we propose a strategy to circumvent these challenges by encapsulating silicene between transition-metal dichalcogenides (TMDCs) layers. First-principles calculations show that such encapsulated silicene exhibit a two-orders-of-magnitude enhancement in its nontrivial band gap, which is driven by the strong spin–orbit coupling effect in TMDCs via the proximity effect. Moreover, the cladding TMDCs layers also shield silicene from environmental gases that are detrimental to the QSH state in free-standing silicene. In conclusion, the encapsulated silicene represents a novel two-dimensional topological insulator with a robust nontrivial band gap suitable for room-temperature applications, which has significant implications for innovative QSH device design and fabrication.

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Research Organization:: Univ. of Nevada, Las Vegas, NV (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0001982

OSTI ID:: 1332446

Journal Information:: ACS Applied Materials and Interfaces, Journal Name: ACS Applied Materials and Interfaces Journal Issue: 34 Vol. 7; ISSN 1944-8244

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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