Encapsulated silicene: A robust large-gap topological insulator
Abstract
The quantum spin Hall (QSH) effect predicted in silicene has raised exciting prospects of new device applications compatible with current microelectronic technology. Efforts to explore this novel phenomenon, however, have been impeded by fundamental challenges imposed by silicene’s small topologically nontrivial band gap and fragile electronic properties susceptible to environmental degradation effects. Here we propose a strategy to circumvent these challenges by encapsulating silicene between transition-metal dichalcogenides (TMDCs) layers. First-principles calculations show that such encapsulated silicene exhibit a two-orders-of-magnitude enhancement in its nontrivial band gap, which is driven by the strong spin–orbit coupling effect in TMDCs via the proximity effect. Moreover, the cladding TMDCs layers also shield silicene from environmental gases that are detrimental to the QSH state in free-standing silicene. In conclusion, the encapsulated silicene represents a novel two-dimensional topological insulator with a robust nontrivial band gap suitable for room-temperature applications, which has significant implications for innovative QSH device design and fabrication.
- Authors:
-
- Univ. of New South Wales, Sydney, NSW (Australia)
- Jacobs Univ. Bremen, Bremen (Germany)
- Max Planck Institute for Chemical Physics of Solids, Dresden (Germany)
- Univ. of Nevada, Las Vegas, NV (United States)
- Publication Date:
- Research Org.:
- Univ. of Nevada, Las Vegas, NV (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1332446
- Grant/Contract Number:
- NA0001982
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ACS Applied Materials and Interfaces
- Additional Journal Information:
- Journal Volume: 7; Journal Issue: 34; Journal ID: ISSN 1944-8244
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Kou, Liangzhi, Ma, Yandong, Yan, Binghai, Tan, Xin, Chen, Changfeng, and Smith, Sean C. Encapsulated silicene: A robust large-gap topological insulator. United States: N. p., 2015.
Web. doi:10.1021/acsami.5b05063.
Kou, Liangzhi, Ma, Yandong, Yan, Binghai, Tan, Xin, Chen, Changfeng, & Smith, Sean C. Encapsulated silicene: A robust large-gap topological insulator. United States. https://doi.org/10.1021/acsami.5b05063
Kou, Liangzhi, Ma, Yandong, Yan, Binghai, Tan, Xin, Chen, Changfeng, and Smith, Sean C. Thu .
"Encapsulated silicene: A robust large-gap topological insulator". United States. https://doi.org/10.1021/acsami.5b05063. https://www.osti.gov/servlets/purl/1332446.
@article{osti_1332446,
title = {Encapsulated silicene: A robust large-gap topological insulator},
author = {Kou, Liangzhi and Ma, Yandong and Yan, Binghai and Tan, Xin and Chen, Changfeng and Smith, Sean C.},
abstractNote = {The quantum spin Hall (QSH) effect predicted in silicene has raised exciting prospects of new device applications compatible with current microelectronic technology. Efforts to explore this novel phenomenon, however, have been impeded by fundamental challenges imposed by silicene’s small topologically nontrivial band gap and fragile electronic properties susceptible to environmental degradation effects. Here we propose a strategy to circumvent these challenges by encapsulating silicene between transition-metal dichalcogenides (TMDCs) layers. First-principles calculations show that such encapsulated silicene exhibit a two-orders-of-magnitude enhancement in its nontrivial band gap, which is driven by the strong spin–orbit coupling effect in TMDCs via the proximity effect. Moreover, the cladding TMDCs layers also shield silicene from environmental gases that are detrimental to the QSH state in free-standing silicene. In conclusion, the encapsulated silicene represents a novel two-dimensional topological insulator with a robust nontrivial band gap suitable for room-temperature applications, which has significant implications for innovative QSH device design and fabrication.},
doi = {10.1021/acsami.5b05063},
journal = {ACS Applied Materials and Interfaces},
number = 34,
volume = 7,
place = {United States},
year = {Thu Aug 20 00:00:00 EDT 2015},
month = {Thu Aug 20 00:00:00 EDT 2015}
}
Web of Science
Works referenced in this record:
The quantum spin Hall effect and topological insulators
journal, January 2010
- Qi, Xiao-Liang; Zhang, Shou-Cheng
- Physics Today, Vol. 63, Issue 1, p. 33-38
Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
journal, March 2013
- Chang, C. -Z.; Zhang, J.; Feng, X.
- Science, Vol. 340, Issue 6129
A tunable topological insulator in the spin helical Dirac transport regime
journal, July 2009
- Hsieh, D.; Xia, Y.; Qian, D.
- Nature, Vol. 460, Issue 7259
Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
journal, May 2009
- Zhang, Haijun; Liu, Chao-Xing; Qi, Xiao-Liang
- Nature Physics, Vol. 5, Issue 6, p. 438-442
Silicene: Compelling Experimental Evidence for Graphenelike Two-Dimensional Silicon
journal, April 2012
- Vogt, Patrick; De Padova, Paola; Quaresima, Claudio
- Physical Review Letters, Vol. 108, Issue 15
Evidence of Silicene in Honeycomb Structures of Silicon on Ag(111)
journal, June 2012
- Feng, Baojie; Ding, Zijing; Meng, Sheng
- Nano Letters, Vol. 12, Issue 7, p. 3507-3511
Quantum Spin Hall Effect in Silicene and Two-Dimensional Germanium
journal, August 2011
- Liu, Cheng-Cheng; Feng, Wanxiang; Yao, Yugui
- Physical Review Letters, Vol. 107, Issue 7
Silicene field-effect transistors operating at room temperature
journal, February 2015
- Tao, Li; Cinquanta, Eugenio; Chiappe, Daniele
- Nature Nanotechnology, Vol. 10, Issue 3
Silicene oxides: formation, structures and electronic properties
journal, December 2013
- Wang, Rong; Pi, Xiaodong; Ni, Zhenyi
- Scientific Reports, Vol. 3, Issue 1
Gas adsorption on silicene: A theoretical study
journal, May 2014
- Feng, Jing-wen; Liu, Yue-jie; Wang, Hong-xia
- Computational Materials Science, Vol. 87
Topological insulators and superconductors
journal, October 2011
- Qi, Xiao-Liang; Zhang, Shou-Cheng
- Reviews of Modern Physics, Vol. 83, Issue 4
Colloquium: Topological insulators
journal, November 2010
- Hasan, M. Z.; Kane, C. L.
- Reviews of Modern Physics, Vol. 82, Issue 4, p. 3045-3067
Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
journal, December 2006
- Bernevig, B. A.; Hughes, T. L.; Zhang, S.-C.
- Science, Vol. 314, Issue 5806, p. 1757-1761
A large-energy-gap oxide topological insulator based on the superconductor BaBiO3
journal, September 2013
- Yan, Binghai; Jansen, Martin; Felser, Claudia
- Nature Physics, Vol. 9, Issue 11
Transition-Metal Pentatelluride and : A Paradigm for Large-Gap Quantum Spin Hall Insulators
journal, January 2014
- Weng, Hongming; Dai, Xi; Fang, Zhong
- Physical Review X, Vol. 4, Issue 1
Robust Two-Dimensional Topological Insulators in Methyl-Functionalized Bismuth, Antimony, and Lead Bilayer Films
journal, January 2015
- Ma, Yandong; Dai, Ying; Kou, Liangzhi
- Nano Letters, Vol. 15, Issue 2
Large-Gap Quantum Spin Hall Insulators in Tin Films
journal, September 2013
- Xu, Yong; Yan, Binghai; Zhang, Hai-Jun
- Physical Review Letters, Vol. 111, Issue 13
Quantum spin Hall insulators and quantum valley Hall insulators of BiX/SbX (X=H, F, Cl and Br) monolayers with a record bulk band gap
journal, December 2014
- Song, Zhigang; Liu, Cheng-Cheng; Yang, Jinbo
- NPG Asia Materials, Vol. 6, Issue 12
Absence and presence of Dirac electrons in silicene on substrates
journal, June 2013
- Guo, Zhi-Xin; Furuya, Shinnosuke; Iwata, Jun-ichi
- Physical Review B, Vol. 87, Issue 23
Enhancement of flip-chip fatigue life by encapsulation
journal, March 1991
- Suryanarayana, D.; Hsiao, R.; Gall, T. P.
- IEEE Transactions on Components, Hybrids, and Manufacturing Technology, Vol. 14, Issue 1
Engineering the electronic properties of silicene by tuning the composition of MoX 2 and GaX (X = S,Se,Te) chalchogenide templates
journal, May 2014
- Scalise, E.; Houssa, M.; Cinquanta, E.
- 2D Materials, Vol. 1, Issue 1
Electronic structures of reconstructed zigzag silicene nanoribbons
journal, February 2014
- Ding, Yi; Wang, Yanli
- Applied Physics Letters, Vol. 104, Issue 8
Graphene-Based Topological Insulator with an Intrinsic Bulk Band Gap above Room Temperature
journal, November 2013
- Kou, Liangzhi; Yan, Binghai; Hu, Feiming
- Nano Letters, Vol. 13, Issue 12
Robust 2D Topological Insulators in van der Waals Heterostructures
journal, September 2014
- Kou, Liangzhi; Wu, Shu-Chun; Felser, Claudia
- ACS Nano, Vol. 8, Issue 10
Topological superconductivity at the edge of transition-metal dichalcogenides
journal, September 2014
- Xu, Gang; Wang, Jing; Yan, Binghai
- Physical Review B, Vol. 90, Issue 10
Spin-orbit-coupled quantum wires and Majorana fermions on zigzag edges of monolayer transition-metal dichalcogenides
journal, April 2014
- Chu, Rui-Lin; Liu, Gui-Bin; Yao, Wang
- Physical Review B, Vol. 89, Issue 15
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
journal, November 2012
- Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras
- Nature Nanotechnology, Vol. 7, Issue 11, p. 699-712
Solvent Exfoliation of Transition Metal Dichalcogenides: Dispersibility of Exfoliated Nanosheets Varies Only Weakly between Compounds
journal, March 2012
- Cunningham, Graeme; Lotya, Mustafa; Cucinotta, Clotilde S.
- ACS Nano, Vol. 6, Issue 4
Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors
journal, October 2011
- Zhu, Z. Y.; Cheng, Y. C.; Schwingenschlögl, U.
- Physical Review B, Vol. 84, Issue 15
Valley polarization in MoS2 monolayers by optical pumping
journal, June 2012
- Zeng, Hualing; Dai, Junfeng; Yao, Wang
- Nature Nanotechnology, Vol. 7, Issue 8
Strain engineering of WS 2 , WSe 2 , and WTe 2
journal, January 2014
- Amin, B.; Kaloni, T. P.; Schwingenschlögl, U.
- RSC Advances, Vol. 4, Issue 65
Band offsets and heterostructures of two-dimensional semiconductors
journal, January 2013
- Kang, Jun; Tongay, Sefaattin; Zhou, Jian
- Applied Physics Letters, Vol. 102, Issue 1
Effects of temperature and strain rate on the mechanical properties of silicene
journal, January 2014
- Pei, Qing-Xiang; Sha, Zhen-Dong; Zhang, Ying-Yan
- Journal of Applied Physics, Vol. 115, Issue 2
Elastic Properties of Freely Suspended MoS 2 Nanosheets
journal, January 2012
- Castellanos-Gomez, Andres; Poot, Menno; Steele, Gary A.
- Advanced Materials, Vol. 24, Issue 6
Quantum Anomalous Hall Effect in Graphene Proximity Coupled to an Antiferromagnetic Insulator
journal, March 2014
- Qiao, Zhenhua; Ren, Wei; Chen, Hua
- Physical Review Letters, Vol. 112, Issue 11
Spin–orbit proximity effect in graphene
journal, September 2014
- Avsar, A.; Tan, J. Y.; Taychatanapat, T.
- Nature Communications, Vol. 5, Issue 1
Engineering a Robust Quantum Spin Hall State in Graphene via Adatom Deposition
journal, October 2011
- Weeks, Conan; Hu, Jun; Alicea, Jason
- Physical Review X, Vol. 1, Issue 2
Topological insulators with inversion symmetry
journal, July 2007
- Fu, Liang; Kane, C. L.
- Physical Review B, Vol. 76, Issue 4
Topological Insulators in Three Dimensions
journal, March 2007
- Fu, Liang; Kane, C. L.; Mele, E. J.
- Physical Review Letters, Vol. 98, Issue 10, Article No. 106803
Getting through the Nature of Silicene: An sp 2 –sp 3 Two-Dimensional Silicon Nanosheet
journal, August 2013
- Cinquanta, Eugenio; Scalise, Emilio; Chiappe, Daniele
- The Journal of Physical Chemistry C, Vol. 117, Issue 32
The instability of silicene on Ag(111)
journal, December 2013
- Acun, A.; Poelsema, B.; Zandvliet, H. J. W.
- Applied Physics Letters, Vol. 103, Issue 26
Hindering the Oxidation of Silicene with Non-Reactive Encapsulation
journal, April 2013
- Molle, Alessandro; Grazianetti, Carlo; Chiappe, Daniele
- Advanced Functional Materials, Vol. 23, Issue 35
Graphene Synthesis via Magnetic Inductive Heating of Copper Substrates
journal, August 2013
- Piner, Richard; Li, Huifeng; Kong, Xianghua
- ACS Nano, Vol. 7, Issue 9
Two-Dimensional Si Nanosheets with Local Hexagonal Structure on a MoS 2 Surface
journal, December 2013
- Chiappe, Daniele; Scalise, Emilio; Cinquanta, Eugenio
- Advanced Materials, Vol. 26, Issue 13
Adhesion and electronic structure of graphene on hexagonal boron nitride substrates
journal, November 2011
- Sachs, B.; Wehling, T. O.; Katsnelson, M. I.
- Physical Review B, Vol. 84, Issue 19
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996
- Kresse, G.; Furthmüller, J.
- Physical Review B, Vol. 54, Issue 16, p. 11169-11186
Semiempirical GGA-type density functional constructed with a long-range dispersion correction
journal, January 2006
- Grimme, Stefan
- Journal of Computational Chemistry, Vol. 27, Issue 15, p. 1787-1799
Maximally localized generalized Wannier functions for composite energy bands
journal, November 1997
- Marzari, Nicola; Vanderbilt, David
- Physical Review B, Vol. 56, Issue 20
Works referencing / citing this record:
Nonvolatile Memories Based on Graphene and Related 2D Materials
journal, January 2019
- Bertolazzi, Simone; Bondavalli, Paolo; Roche, Stephan
- Advanced Materials, Vol. 31, Issue 10
Two-dimensional topological insulators of Pb/Sb honeycombs on a Ge(111) semiconductor surface
journal, January 2018
- Hu, Xingkai; Pang, Zhaoxia; Chen, Xinlian
- RSC Advances, Vol. 8, Issue 61
Topological phase transition and tunable electronic properties of hydrogenated bismuthene: from single-layer to double-layer
journal, October 2019
- Liu, Ming-Yang; Gong, Long; Chen, Qing-Yuan
- Journal of Physics: Condensed Matter, Vol. 32, Issue 3
Topological insulators in the ordered double transition metals MXenes ( , W; , Zr, Hf)
journal, September 2016
- Khazaei, Mohammad; Ranjbar, Ahmad; Arai, Masao
- Physical Review B, Vol. 94, Issue 12
A bird’s eye view on the flat and conic band world of the honeycomb and Kagome lattices: towards an understanding of 2D metal-organic frameworks electronic structure
journal, October 2017
- Barreteau, C.; Ducastelle, F.; Mallah, T.
- Journal of Physics: Condensed Matter, Vol. 29, Issue 46
Using van der Waals heterostructures based on two-dimensional blue phosphorus and XC (X = Ge, Si) for water-splitting photocatalysis: a first-principles study
journal, January 2019
- Ren, Kai; Ren, Chongdan; Luo, Yi
- Physical Chemistry Chemical Physics, Vol. 21, Issue 19
Prediction of two-dimensional PC 6 as a promising anode material for potassium-ion batteries
journal, January 2019
- Dou, Kaiying; Ma, Yandong; Zhang, Ting
- Physical Chemistry Chemical Physics, Vol. 21, Issue 47