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This content will become publicly available on November 11, 2017

Title: Carrier localization effects in GaAs 1−x Sb x /GaAs heterostructures

Authors:
; ; ; ;
Publication Date:
OSTI Identifier:
1331827
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 120; Journal Issue: 18; Related Information: CHORUS Timestamp: 2016-12-28 17:49:06; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English