Carrier localization effects in GaAs1−xSbx/GaAs heterostructures

Maros, Aymeric; Faleev, Nikolai N.; Bertoni, Mariana I.; Honsberg, Christiana B.; King, Richard R.

doi:10.1063/1.4967755

Title: Carrier localization effects in GaAs1−xSbx/GaAs heterostructures

Authors:

^[1]; Faleev, Nikolai N. ^[1];

^[1]; Honsberg, Christiana B. ^[1]; King, Richard R. ^[1]

School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85281, USA

Publication Date:: Fri Nov 11 00:00:00 EST 2016

Sponsoring Org.:: USDOE

OSTI Identifier:: 1331827

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Name: Journal of Applied Physics Journal Volume: 120 Journal Issue: 18; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Maros, Aymeric, Faleev, Nikolai N., Bertoni, Mariana I., Honsberg, Christiana B., and King, Richard R. Carrier localization effects in GaAs1−xSbx/GaAs heterostructures.  United States: N. p., 2016. 
Web.  doi:10.1063/1.4967755.

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                    Maros, Aymeric, Faleev, Nikolai N., Bertoni, Mariana I., Honsberg, Christiana B., & King, Richard R. Carrier localization effects in GaAs1−xSbx/GaAs heterostructures.  United States.  https://doi.org/10.1063/1.4967755

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                    Maros, Aymeric, Faleev, Nikolai N., Bertoni, Mariana I., Honsberg, Christiana B., and King, Richard R. Fri .  
"Carrier localization effects in GaAs1−xSbx/GaAs heterostructures".  United States.  https://doi.org/10.1063/1.4967755.

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@article{osti_1331827,

  title        = {Carrier localization effects in GaAs1−xSbx/GaAs heterostructures},

  author       = {Maros, Aymeric and Faleev, Nikolai N. and Bertoni, Mariana I. and Honsberg, Christiana B. and King, Richard R.},

  abstractNote = {},

  doi          = {10.1063/1.4967755},

  journal      = {Journal of Applied Physics},

  number       = 18,

  volume       = 120,

  place        = {United States},

  year         = {Fri Nov 11 00:00:00 EST 2016},

  month        = {Fri Nov 11 00:00:00 EST 2016}

}

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Works referenced in this record:

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Title: Carrier localization effects in GaAs1−xSbx/GaAs heterostructures

Citation Formats

Ordering in GaAs 1− x Sb x grown by molecular beam epitaxy journal, December 1987

GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates journal, January 2000

2.6 μm InGaAs photodiodes journal, September 1988

Growth and optical properties of GaAsSb quantum wells for 1.3 μm VCSELs journal, January 2001

GaAsSb/GaAs band alignment evaluation for long-wave photonic applications journal, April 2003

Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys journal, September 2001

GaNAsSb: how does it compare with other dilute III V-nitride alloys? journal, July 2002

Defect creation in InGaAs/GaAs multiple quantum wells–I. Structural properties journal, September 2015

Theory of photoluminescence line shape due to interfacial quality in quantum well structures journal, April 1984

Band-Gap Change in Ordered/Disordered GaAs1-ySby Layers Grown on (001) and (111)B InP Substrates journal, April 2002

Strain relaxation and exciton localization effects on the Stokes shift in InAsxP1−x/InP multiple quantum wells journal, March 1998

GaAsSb: A novel material for 1.3 [micro sign]m VCSELs journal, January 1998

Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs journal, May 2001

A model for steady-state luminescence of localized-state ensemble journal, September 2005

Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence journal, January 2013

Temperature dependence of the dielectric function of germanium journal, August 1984

Critical thickness investigation of MBE-grown GaInAs/GaAs and GaAsSb/GaAs heterostructures journal, March 2016

Correlation between quantum well morphology, carrier localization and the optoelectronic properties of GaInNAs/GaAs light emitting diodes journal, June 2006

Defect Creation in InGaAs/GaAs Multiple Quantum Wells – II. Optical Properties journal, September 2015

Spatially indirect radiative recombination in InAlAsSb grown lattice-matched to InP by molecular beam epitaxy journal, June 2015

Origin of Antimony Segregation in GaInSb / InAs Strained-Layer Superlattices journal, November 2000

Carrier dynamics between delocalized and localized states in type-II GaAsSb/GaAs quantum wells journal, February 2011

Recombination processes in N-containing III–V ternary alloys journal, March 2003

Defects in epitaxial multilayers I. Misfit dislocations journal, December 1974

Temperature-dependent photoluminescence spectra of GaAsSb/AlGaAs and GaAsSbN/GaAs single quantum wells under different excitation intensities journal, January 2007

Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs journal, February 2010

Atomic ordering-induced band gap reductions in GaAsSb epilayers grown by molecular beam epitaxy journal, March 2005

Modeling cross-hatch surface morphology in growing mismatched layers journal, February 2002

Localization of excitons by potential fluctuations and its effect on the Stokes shift in InGaP/InP quantum confined heterostructures journal, November 1998

Temperature dependence of the energy gap in semiconductors journal, January 1967

Basic Model Relations for Temperature Dependencies of Fundamental Energy Gaps in Semiconductors journal, March 1997

Sb-surface segregation and the control of compositional abruptness at the interface journal, May 1997

Strain effects and band offsets in GaAs/InGaAs strained layered quantum structures journal, August 1989

Excellent uniformity and very low (<50 A/cm 2 ) threshold current density strained InGaAs quantum well diode lasers on GaAs substrate journal, April 1991

Ordering in GaAs _{1− x} Sb _x grown by molecular beam epitaxy
journal, December 1987

GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates
journal, January 2000

2.6 μm InGaAs photodiodes
journal, September 1988

Growth and optical properties of GaAsSb quantum wells for 1.3 μm VCSELs
journal, January 2001

GaAsSb/GaAs band alignment evaluation for long-wave photonic applications
journal, April 2003

Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys
journal, September 2001

GaNAsSb: how does it compare with other dilute III V-nitride alloys?
journal, July 2002

Defect creation in InGaAs/GaAs multiple quantum wells–I. Structural properties
journal, September 2015

Theory of photoluminescence line shape due to interfacial quality in quantum well structures
journal, April 1984

Band-Gap Change in Ordered/Disordered GaAs1-ySby Layers Grown on (001) and (111)B InP Substrates
journal, April 2002

Strain relaxation and exciton localization effects on the Stokes shift in InAsxP1−x/InP multiple quantum wells
journal, March 1998

GaAsSb: A novel material for 1.3 [micro sign]m VCSELs
journal, January 1998

Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs
journal, May 2001

A model for steady-state luminescence of localized-state ensemble
journal, September 2005

Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence
journal, January 2013

Temperature dependence of the dielectric function of germanium
journal, August 1984

Critical thickness investigation of MBE-grown GaInAs/GaAs and GaAsSb/GaAs heterostructures
journal, March 2016

Correlation between quantum well morphology, carrier localization and the optoelectronic properties of GaInNAs/GaAs light emitting diodes
journal, June 2006

Defect Creation in InGaAs/GaAs Multiple Quantum Wells – II. Optical Properties
journal, September 2015

Spatially indirect radiative recombination in InAlAsSb grown lattice-matched to InP by molecular beam epitaxy
journal, June 2015

Origin of Antimony Segregation in $GaInSb / InAs$ Strained-Layer Superlattices
journal, November 2000

Carrier dynamics between delocalized and localized states in type-II GaAsSb/GaAs quantum wells
journal, February 2011

Recombination processes in N-containing III–V ternary alloys
journal, March 2003

Defects in epitaxial multilayers I. Misfit dislocations
journal, December 1974

Temperature-dependent photoluminescence spectra of GaAsSb/AlGaAs and GaAsSbN/GaAs single quantum wells under different excitation intensities
journal, January 2007

Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs
journal, February 2010

Atomic ordering-induced band gap reductions in GaAsSb epilayers grown by molecular beam epitaxy
journal, March 2005

Modeling cross-hatch surface morphology in growing mismatched layers
journal, February 2002

Localization of excitons by potential fluctuations and its effect on the Stokes shift in InGaP/InP quantum confined heterostructures
journal, November 1998

Temperature dependence of the energy gap in semiconductors
journal, January 1967

Basic Model Relations for Temperature Dependencies of Fundamental Energy Gaps in Semiconductors
journal, March 1997

Sb-surface segregation and the control of compositional abruptness at the interface
journal, May 1997

Strain effects and band offsets in GaAs/InGaAs strained layered quantum structures
journal, August 1989

Excellent uniformity and very low (<50 A/cm ² ) threshold current density strained InGaAs quantum well diode lasers on GaAs substrate
journal, April 1991