Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes
Abstract
Here, we discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that the capacitance-voltage measurements can be used to estimate the compensation and doping in the p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62%, respectively, were achieved for the tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be used to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range.
- Authors:
-
- The Ohio State Univ., Columbus, OH (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1338910
- Alternate Identifier(s):
- OSTI ID: 1331405
- Report Number(s):
- SAND-2017-0055J
Journal ID: ISSN 0003-6951; 650201; TRN: US1701276
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 109; Journal Issue: 19; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., and Rajan, Siddharth. Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes. United States: N. p., 2016.
Web. doi:10.1063/1.4967698.
Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., & Rajan, Siddharth. Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes. United States. https://doi.org/10.1063/1.4967698
Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., and Rajan, Siddharth. Wed .
"Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes". United States. https://doi.org/10.1063/1.4967698. https://www.osti.gov/servlets/purl/1338910.
@article{osti_1338910,
title = {Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes},
author = {Zhang, Yuewei and Krishnamoorthy, Sriram and Akyol, Fatih and Allerman, Andrew A. and Moseley, Michael W. and Armstrong, Andrew M. and Rajan, Siddharth},
abstractNote = {Here, we discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that the capacitance-voltage measurements can be used to estimate the compensation and doping in the p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62%, respectively, were achieved for the tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be used to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range.},
doi = {10.1063/1.4967698},
journal = {Applied Physics Letters},
number = 19,
volume = 109,
place = {United States},
year = {Wed Nov 09 00:00:00 EST 2016},
month = {Wed Nov 09 00:00:00 EST 2016}
}
Web of Science
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