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Title: Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes

Abstract

The design and Mg-doping profile of AlN/Al{sub 0.7}Ga{sub 0.3}N electron blocking heterostructures (EBH) for AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) emitting below 250 nm was investigated. By inserting an AlN electron blocking layer (EBL) into the EBH, we were able to increase the quantum well emission power and significantly reduce long wavelength parasitic luminescence. Furthermore, electron leakage was suppressed by optimizing the thickness of the AlN EBL while still maintaining sufficient hole injection. Ultraviolet (UV)-C LEDs with very low parasitic luminescence (7% of total emission power) and external quantum efficiencies of 0.19% at 246 nm have been realized. This concept was applied to AlGaN MQW LEDs emitting between 235 nm and 263 nm with external quantum efficiencies ranging from 0.002% to 0.93%. After processing, we were able to demonstrate an UV-C LED emitting at 234 nm with 14.5 μW integrated optical output power and an external quantum efficiency of 0.012% at 18.2 A/cm{sup 2}.

Authors:
; ; ; ; ; ;  [1]; ; ; ; ;  [2];  [1];  [3]
  1. Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany)
  2. Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)
  3. (Germany)
Publication Date:
OSTI Identifier:
22314473
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM COMPOUNDS; CHARGE CARRIERS; DEPLETION LAYER; GALLIUM COMPOUNDS; LIGHT EMITTING DIODES; LUMINESCENCE; NITROGEN COMPOUNDS; QUANTUM EFFICIENCY; QUANTUM WELLS; ULTRAVIOLET RADIATION

Citation Formats

Mehnke, Frank, E-mail: mehnke@physik.tu-berlin.de, Kuhn, Christian, Guttmann, Martin, Reich, Christoph, Kolbe, Tim, Rass, Jens, Wernicke, Tim, Kueller, Viola, Knauer, Arne, Lapeyrade, Mickael, Einfeldt, Sven, Weyers, Markus, Kneissl, Michael, and Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin. Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes. United States: N. p., 2014. Web. doi:10.1063/1.4892883.
Mehnke, Frank, E-mail: mehnke@physik.tu-berlin.de, Kuhn, Christian, Guttmann, Martin, Reich, Christoph, Kolbe, Tim, Rass, Jens, Wernicke, Tim, Kueller, Viola, Knauer, Arne, Lapeyrade, Mickael, Einfeldt, Sven, Weyers, Markus, Kneissl, Michael, & Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin. Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes. United States. doi:10.1063/1.4892883.
Mehnke, Frank, E-mail: mehnke@physik.tu-berlin.de, Kuhn, Christian, Guttmann, Martin, Reich, Christoph, Kolbe, Tim, Rass, Jens, Wernicke, Tim, Kueller, Viola, Knauer, Arne, Lapeyrade, Mickael, Einfeldt, Sven, Weyers, Markus, Kneissl, Michael, and Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin. Mon . "Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes". United States. doi:10.1063/1.4892883.
@article{osti_22314473,
title = {Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes},
author = {Mehnke, Frank, E-mail: mehnke@physik.tu-berlin.de and Kuhn, Christian and Guttmann, Martin and Reich, Christoph and Kolbe, Tim and Rass, Jens and Wernicke, Tim and Kueller, Viola and Knauer, Arne and Lapeyrade, Mickael and Einfeldt, Sven and Weyers, Markus and Kneissl, Michael and Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin},
abstractNote = {The design and Mg-doping profile of AlN/Al{sub 0.7}Ga{sub 0.3}N electron blocking heterostructures (EBH) for AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) emitting below 250 nm was investigated. By inserting an AlN electron blocking layer (EBL) into the EBH, we were able to increase the quantum well emission power and significantly reduce long wavelength parasitic luminescence. Furthermore, electron leakage was suppressed by optimizing the thickness of the AlN EBL while still maintaining sufficient hole injection. Ultraviolet (UV)-C LEDs with very low parasitic luminescence (7% of total emission power) and external quantum efficiencies of 0.19% at 246 nm have been realized. This concept was applied to AlGaN MQW LEDs emitting between 235 nm and 263 nm with external quantum efficiencies ranging from 0.002% to 0.93%. After processing, we were able to demonstrate an UV-C LED emitting at 234 nm with 14.5 μW integrated optical output power and an external quantum efficiency of 0.012% at 18.2 A/cm{sup 2}.},
doi = {10.1063/1.4892883},
journal = {Applied Physics Letters},
number = 5,
volume = 105,
place = {United States},
year = {Mon Aug 04 00:00:00 EDT 2014},
month = {Mon Aug 04 00:00:00 EDT 2014}
}