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Title: Room-temperature ferroelectricity in CuInP 2S 6 ultrathin flakes

In this study, two-dimensional (2D) materials have emerged as promising candidates for various optoelectronic applications based on their diverse electronic properties, ranging from insulating to superconducting. However, cooperative phenomena such as ferroelectricity in the 2D limit have not been well explored. Here, we report room-temperature ferroelectricity in 2D CuInP 2S 6 (CIPS) with a transition temperature of ~320 K. Switchable polarization is observed in thin CIPS of ~4 nm. To demonstrate the potential of this 2D ferroelectric material, we prepare a van der Waals (vdW) ferroelectric diode formed by CIPS/Si heterostructure, which shows good memory behaviour with on/off ratio of ~100. The addition of ferroelectricity to the 2D family opens up possibilities for numerous novel applications, including sensors, actuators, non-volatile memory devices, and various vdW heterostructures based on 2D ferroelectricity.
Authors:
 [1] ; ORCiD logo [1] ;  [2] ;  [3] ;  [1] ;  [4] ;  [1] ;  [1] ;  [1] ;  [1] ; ORCiD logo [5] ; ORCiD logo [6] ;  [7] ; ORCiD logo [2] ;  [8] ; ORCiD logo [1] ;  [9]
  1. Nanyang Technological Univ. (Singapore)
  2. Univ. of Washington, Seattle, WA (United States)
  3. Hefei Univ. of Technology, Hefei (China)
  4. Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); National Institute of Advanced Industrial Science and Technology, Tsukuba (Japan)
  5. Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  6. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  7. Univ. of Houston, Houston, TX (United States)
  8. Rice Univ., Houston, TX (United States)
  9. Nanyang Technological Univ. (Singapore); CINTRA CNRS/NTU/THALES (Singapore)
Publication Date:
Grant/Contract Number:
AC05-00OR22725
Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 7; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Research Org:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org:
USDOE Office of Science (SC)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
OSTI Identifier:
1331101

Liu, Fucai, You, Lu, Seyler, Kyle L., Li, Xiaobao, Yu, Peng, Lin, Junhao, Wang, Xuewen, Zhou, Jiadong, Wang, Hong, He, Haiyong, Pantelides, Sokrates T., Zhou, Wu, Sharma, Pradeep, Xu, Xiaodong, Ajayan, Pulickel M., Wang, Junling, and Liu, Zheng. Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes. United States: N. p., Web. doi:10.1038/ncomms12357.
Liu, Fucai, You, Lu, Seyler, Kyle L., Li, Xiaobao, Yu, Peng, Lin, Junhao, Wang, Xuewen, Zhou, Jiadong, Wang, Hong, He, Haiyong, Pantelides, Sokrates T., Zhou, Wu, Sharma, Pradeep, Xu, Xiaodong, Ajayan, Pulickel M., Wang, Junling, & Liu, Zheng. Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes. United States. doi:10.1038/ncomms12357.
Liu, Fucai, You, Lu, Seyler, Kyle L., Li, Xiaobao, Yu, Peng, Lin, Junhao, Wang, Xuewen, Zhou, Jiadong, Wang, Hong, He, Haiyong, Pantelides, Sokrates T., Zhou, Wu, Sharma, Pradeep, Xu, Xiaodong, Ajayan, Pulickel M., Wang, Junling, and Liu, Zheng. 2016. "Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes". United States. doi:10.1038/ncomms12357. https://www.osti.gov/servlets/purl/1331101.
@article{osti_1331101,
title = {Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes},
author = {Liu, Fucai and You, Lu and Seyler, Kyle L. and Li, Xiaobao and Yu, Peng and Lin, Junhao and Wang, Xuewen and Zhou, Jiadong and Wang, Hong and He, Haiyong and Pantelides, Sokrates T. and Zhou, Wu and Sharma, Pradeep and Xu, Xiaodong and Ajayan, Pulickel M. and Wang, Junling and Liu, Zheng},
abstractNote = {In this study, two-dimensional (2D) materials have emerged as promising candidates for various optoelectronic applications based on their diverse electronic properties, ranging from insulating to superconducting. However, cooperative phenomena such as ferroelectricity in the 2D limit have not been well explored. Here, we report room-temperature ferroelectricity in 2D CuInP2S6 (CIPS) with a transition temperature of ~320 K. Switchable polarization is observed in thin CIPS of ~4 nm. To demonstrate the potential of this 2D ferroelectric material, we prepare a van der Waals (vdW) ferroelectric diode formed by CIPS/Si heterostructure, which shows good memory behaviour with on/off ratio of ~100. The addition of ferroelectricity to the 2D family opens up possibilities for numerous novel applications, including sensors, actuators, non-volatile memory devices, and various vdW heterostructures based on 2D ferroelectricity.},
doi = {10.1038/ncomms12357},
journal = {Nature Communications},
number = ,
volume = 7,
place = {United States},
year = {2016},
month = {8}
}