Ferroelectric Schottky diodes of CuInP₂S₆ nanosheet

Journal Article · 04 October 2023 · Applied Physics Letters

DOI: https://doi.org/10.1063/5.0160928 · OSTI ID:2007652

Yao, Jinyuan  ^[1]; Liu, Yongtao  ^[2]; Ding, Shaoqing  ^[3]; Zhu, Yanglin  ^[4]; Mao, Zhiqiang  ^[3]; Kalinin, Sergei V.  ^[5]; Liu, Ying  ^[3]

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1. Pennsylvania State University, University Park, PA (United States); Pennsylvania State University
2. Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
3. Pennsylvania State University, University Park, PA (United States)
4. Nanjing Normal University, Jiangsu (China)
5. University of Tennessee, Knoxville, TN (United States)

Ferroelectricity in van der Waals (vdW) layered material has attracted a great deal of interest recently. CuInP₂S₆ (CIPS), the only vdW layered material whose ferroelectricity in the bulk was demonstrated by direct polarization measurements, was shown to remain ferroelectric down to a thickness of a few nanometers. However, its ferroelectric properties have just started to be explored in the context of potential device applications. Here, we report here the preparation and measurements of metal-ferroelectric semiconductor-metal heterostructures using nanosheets of CIPS obtained by mechanical exfoliation. Four bias voltage and polarization dependent resistive states were observed in the current–voltage characteristics, which we attribute to the formation of ferroelectric Schottky diode, along with switching behavior.

• Research Organization: Pennsylvania State University, University Park, PA (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES)
• Grant/Contract Number: SC0021118
• OSTI ID: 2007652
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 123; ISSN 0003-6951
• Publisher: American Institute of Physics (AIP)Copyright Statement
• Country of Publication: United States
• Language: English