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Title: Laser-assisted focused He+ ion beam induced etching with and without XeF2 gas assist

Abstract

Focused helium ion (He+) milling has been demonstrated as a high-resolution nanopatterning technique; however, it can be limited by its low sputter yield as well as the introduction of undesired subsurface damage. Here, we introduce pulsed laser- and gas-assisted processes to enhance the material removal rate and patterning fidelity. A pulsed laser-assisted He+ milling process is shown to enable high-resolution milling of titanium while reducing subsurface damage in situ. Gas-assisted focused ion beam induced etching (FIBIE) of Ti is also demonstrated in which the XeF2 precursor provides a chemical assist for enhanced material removal rate. In conclusion, a pulsed laser-assisted and gas-assisted FIBIE process is shown to increase the etch yield by ~9× relative to the pure He+ sputtering process. These He+ induced nanopatterning techniques improve material removal rate, in comparison to standard He+ sputtering, while simultaneously decreasing subsurface damage, thus extending the applicability of the He+ probe as a nanopattering tool.

Authors:
 [1];  [1];  [1];  [2];  [3];  [3];  [4];  [4];  [2]
  1. Univ. of Tennessee, Knoxville, TN (United States)
  2. Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Intel Corp., Santa Clara, CA (United States)
  4. Waviks Inc., Dallas, TX (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1331091
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
ACS Applied Materials and Interfaces
Additional Journal Information:
Journal Volume: 8; Journal Issue: 42; Journal ID: ISSN 1944-8244
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; focused ion beam induced etching; helium ion; laser-assisted etching; nanofabrication; titanium; XeF2

Citation Formats

Stanford, Michael G., Mahady, Kyle, Lewis, Brett B., Fowlkes, Jason D., Tan, Shida, Livengood, Richard, Magel, Gregory A., Moore, Thomas M., and Rack, Philip D. Laser-assisted focused He+ ion beam induced etching with and without XeF2 gas assist. United States: N. p., 2016. Web. doi:10.1021/acsami.6b09758.
Stanford, Michael G., Mahady, Kyle, Lewis, Brett B., Fowlkes, Jason D., Tan, Shida, Livengood, Richard, Magel, Gregory A., Moore, Thomas M., & Rack, Philip D. Laser-assisted focused He+ ion beam induced etching with and without XeF2 gas assist. United States. https://doi.org/10.1021/acsami.6b09758
Stanford, Michael G., Mahady, Kyle, Lewis, Brett B., Fowlkes, Jason D., Tan, Shida, Livengood, Richard, Magel, Gregory A., Moore, Thomas M., and Rack, Philip D. Tue . "Laser-assisted focused He+ ion beam induced etching with and without XeF2 gas assist". United States. https://doi.org/10.1021/acsami.6b09758. https://www.osti.gov/servlets/purl/1331091.
@article{osti_1331091,
title = {Laser-assisted focused He+ ion beam induced etching with and without XeF2 gas assist},
author = {Stanford, Michael G. and Mahady, Kyle and Lewis, Brett B. and Fowlkes, Jason D. and Tan, Shida and Livengood, Richard and Magel, Gregory A. and Moore, Thomas M. and Rack, Philip D.},
abstractNote = {Focused helium ion (He+) milling has been demonstrated as a high-resolution nanopatterning technique; however, it can be limited by its low sputter yield as well as the introduction of undesired subsurface damage. Here, we introduce pulsed laser- and gas-assisted processes to enhance the material removal rate and patterning fidelity. A pulsed laser-assisted He+ milling process is shown to enable high-resolution milling of titanium while reducing subsurface damage in situ. Gas-assisted focused ion beam induced etching (FIBIE) of Ti is also demonstrated in which the XeF2 precursor provides a chemical assist for enhanced material removal rate. In conclusion, a pulsed laser-assisted and gas-assisted FIBIE process is shown to increase the etch yield by ~9× relative to the pure He+ sputtering process. These He+ induced nanopatterning techniques improve material removal rate, in comparison to standard He+ sputtering, while simultaneously decreasing subsurface damage, thus extending the applicability of the He+ probe as a nanopattering tool.},
doi = {10.1021/acsami.6b09758},
journal = {ACS Applied Materials and Interfaces},
number = 42,
volume = 8,
place = {United States},
year = {Tue Oct 04 00:00:00 EDT 2016},
month = {Tue Oct 04 00:00:00 EDT 2016}
}

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Works referenced in this record:

Focused helium ion beam deposited low resistivity cobalt metal lines with 10 nm resolution: implications for advanced circuit editing
journal, October 2013

  • Wu, H.; Stern, L. A.; Xia, D.
  • Journal of Materials Science: Materials in Electronics, Vol. 25, Issue 2
  • DOI: 10.1007/s10854-013-1522-6

Sub-10nm patterning by focused He-ion beam milling for fabrication of downscaled graphene nano devices
journal, February 2014


Sub-10-nm nanolithography with a scanning helium beam
journal, January 2009

  • Sidorkin, Vadim; van Veldhoven, Emile; van der Drift, Emile
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 27, Issue 4
  • DOI: 10.1116/1.3182742

Subsurface damage from helium ions as a function of dose, beam energy, and dose rate
journal, January 2009

  • Livengood, Richard; Tan, Shida; Greenzweig, Yuval
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 27, Issue 6
  • DOI: 10.1116/1.3237101

Tungsten-based pillar deposition by helium ion microscope and beam-induced substrate damage
journal, May 2013

  • Kohama, Kazuyuki; Iijima, Tomohiko; Hayashida, Misa
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 31, Issue 3
  • DOI: 10.1116/1.4800983

Structural characterization of He ion microscope platinum deposition and sub-surface silicon damage
journal, July 2012

  • Drezner, Yariv; Greenzweig, Yuval; Fishman, Daniel
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 30, Issue 4
  • DOI: 10.1116/1.4732074

Nanoscale electron beam induced etching: a continuum model that correlates the etch profile to the experimental parameters
journal, October 2008


Gas-assisted focused electron beam and ion beam processing and fabrication
journal, January 2008

  • Utke, Ivo; Hoffmann, Patrik; Melngailis, John
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 26, Issue 4
  • DOI: 10.1116/1.2955728

In situ development of ion bombarded poly(methylmethacrylate) resist in a reactive gas ambient
journal, May 1988

  • Gamo, Kenji
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 6, Issue 3
  • DOI: 10.1116/1.584294

Gas-assisted etching with focused ion beam technology
journal, March 1994


Testing new chemistries for mask repair with focused ion beam gas assisted etching
journal, January 2003

  • Stanishevsky, Andrei; Edinger, Klaus; Orloff, Jon
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 21, Issue 6
  • DOI: 10.1116/1.1624253

Gas-assisted etching of niobium with focused ion beam
journal, March 2005


Interdigitated 50 nm Ti electrode arrays fabricated using XeF 2 enhanced focused ion beam etching
journal, May 2006


Temperature dependence of maskless ion beam assisted etching of InP and Si using focused ion beam
journal, January 1987

  • Ochiai, Yukinori
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 5, Issue 1
  • DOI: 10.1116/1.583918

Focused Ga Ion Beam Etching of Si in Chlorine Gas
journal, October 1990

  • Komuro, Masanori; Watanabe, Norikazu; Hiroshima, Hiroshi
  • Japanese Journal of Applied Physics, Vol. 29, Issue Part 1, No. 10
  • DOI: 10.1143/JJAP.29.2288

Ion beam assisted etching of GaAs by low energy focused ion beam
journal, September 1991

  • Kosugi, T.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 9, Issue 5
  • DOI: 10.1116/1.585667

Characteristics of gas-assisted focused ion beam etching
journal, March 1993

  • Young, R. J.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 11, Issue 2
  • DOI: 10.1116/1.586708

Gas assisted etching of copper with focused ion beams
journal, January 1999

  • Edinger, K.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 17, Issue 6
  • DOI: 10.1116/1.590954

H2O enhanced focused ion beam micromachining
journal, November 1995

  • Stark, T. J.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 13, Issue 6
  • DOI: 10.1116/1.588395

Focused ion beam iodine-enhanced etching of high aspect ratio holes in InP photonic crystals
journal, January 2007

  • Callegari, V.; Nellen, P. M.; Kaufmann, J.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 25, Issue 6
  • DOI: 10.1116/1.2804607

Surface chemistry and optimization of focused ion beam iodine-enhanced etching of indium phosphide
journal, September 2007


Focused electron beam induced etching of titanium with XeF 2
journal, May 2011


Pulsed Laser-Assisted Focused Electron-Beam-Induced Etching of Titanium with XeF 2 : Enhanced Reaction Rate and Precursor Transport
journal, February 2015

  • Noh, J. H.; Fowlkes, J. D.; Timilsina, R.
  • ACS Applied Materials & Interfaces, Vol. 7, Issue 7
  • DOI: 10.1021/am508443s

Electron beam induced deposition at elevated temperatures: compositional changes and purity improvement
journal, December 2010


E-beam induced X-ray mask repair with optimized gas nozzle geometry
journal, March 1991


Monte Carlo simulations of nanoscale focused neon ion beam sputtering
journal, November 2013


SRIM – The stopping and range of ions in matter (2010)
journal, June 2010

  • Ziegler, James F.; Ziegler, M. D.; Biersack, J. P.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 11-12
  • DOI: 10.1016/j.nimb.2010.02.091

In Situ Mitigation of Subsurface and Peripheral Focused Ion Beam Damage via Simultaneous Pulsed Laser Heating
journal, February 2016


Monte Carlo simulation of silicon amorphization during ion implantation
journal, January 1998

  • Bohmayr, W.; Burenkov, A.; Lorenz, J.
  • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 17, Issue 12
  • DOI: 10.1109/43.736563

Chemistry of titanium dry etching in fluorinated and chlorinated gases
journal, January 1992


Dynamic Pattern Formation in Electron-Beam-Induced Etching
journal, December 2015


Works referencing / citing this record:

Fabrication of planar nanomechanical photonic metamaterials
journal, August 2018


Superplastic nanoscale pore shaping by ion irradiation
journal, February 2018


Simulating advanced focused ion beam nanomachining: a quantitative comparison of simulation and experimental results
journal, October 2018


Pulsed Laser-Assisted Helium Ion Nanomachining of Monolayer Graphene—Direct-Write Kirigami Patterns
journal, September 2019

  • Zhang, Cheng; Dyck, Ondrej; Garfinkel, David A.
  • Nanomaterials, Vol. 9, Issue 10
  • DOI: 10.3390/nano9101394

Superplastic nanoscale pore shaping by ion irradiation
text, January 2018

  • Aramesh, Morteza; Mayamei, Yashar; Wolff, Annalena
  • Nature Publishing Group
  • DOI: 10.5167/uzh-167290

Superplastic nanoscale pore shaping by ion irradiation
text, January 2018