Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe

Burst, James M.; Farrell, Stuart B.; Albin, David S.; Colegrove, Eric; Reese, Matthew O.; Duenow, Joel N.; Kuciauskas, Darius; Metzger, Wyatt K.

doi:10.1063/1.4966209

Title: Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe

Abstract

CdTe defect chemistry is adjusted by annealing samples with excess Cd or Te vapor with and without extrinsic dopants. We observe that Group I (Cu and Na) elements can increase hole density above 10¹⁶ cm^-3, but compromise lifetime and stability. By post-deposition incorporation of a Group V dopant (P) in a Cd-rich ambient, lifetimes of 30 ns with 10¹⁶ cm^-3 hole density are achieved in single-crystal and polycrystalline CdTe without CdCl₂ or Cu. Furthermore, phosphorus doping appears to be thermally stable. In conclusion, this combination of long lifetime, high carrier concentration, and improved stability can help overcome historic barriers for CdTe solar cell development.

Authors:

Burst, James M.; Farrell, Stuart B.; Albin, David S.; Colegrove, Eric; Reese, Matthew O.; Duenow, Joel N.;

; Metzger, Wyatt K.

Publication Date:: Tue Nov 01 00:00:00 EDT 2016

Research Org.:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

OSTI Identifier:: 1330596

Alternate Identifier(s):: OSTI ID: 1332487; OSTI ID: 1421266

Report Number(s):: NREL/JA-5K00-66107
Journal ID: ISSN 2166-532X

Grant/Contract Number:: AC36-08-GO28308; AC36-08GO28308

Resource Type:: Published Article

Journal Name:: APL Materials

Additional Journal Information:: Journal Name: APL Materials Journal Volume: 4 Journal Issue: 11; Journal ID: ISSN 2166-532X

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; hole density; doping; II-VI semiconductors; photoluminescence; sodium

Citation Formats


                    Burst, James M., Farrell, Stuart B., Albin, David S., Colegrove, Eric, Reese, Matthew O., Duenow, Joel N., Kuciauskas, Darius, and Metzger, Wyatt K. Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe.  United States: N. p., 2016. 
Web.  doi:10.1063/1.4966209.

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                    Burst, James M., Farrell, Stuart B., Albin, David S., Colegrove, Eric, Reese, Matthew O., Duenow, Joel N., Kuciauskas, Darius, & Metzger, Wyatt K. Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe.  United States.  https://doi.org/10.1063/1.4966209

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                    Burst, James M., Farrell, Stuart B., Albin, David S., Colegrove, Eric, Reese, Matthew O., Duenow, Joel N., Kuciauskas, Darius, and Metzger, Wyatt K. Tue .  
"Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe".  United States.  https://doi.org/10.1063/1.4966209.

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@article{osti_1330596,

  title        = {Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe},

  author       = {Burst, James M. and Farrell, Stuart B. and Albin, David S. and Colegrove, Eric and Reese, Matthew O. and Duenow, Joel N. and Kuciauskas, Darius and Metzger, Wyatt K.},

  abstractNote = {CdTe defect chemistry is adjusted by annealing samples with excess Cd or Te vapor with and without extrinsic dopants. We observe that Group I (Cu and Na) elements can increase hole density above 1016 cm-3, but compromise lifetime and stability. By post-deposition incorporation of a Group V dopant (P) in a Cd-rich ambient, lifetimes of 30 ns with 1016 cm-3 hole density are achieved in single-crystal and polycrystalline CdTe without CdCl2 or Cu. Furthermore, phosphorus doping appears to be thermally stable. In conclusion, this combination of long lifetime, high carrier concentration, and improved stability can help overcome historic barriers for CdTe solar cell development.},

  doi          = {10.1063/1.4966209},

  journal      = {APL Materials},

  number       = 11,

  volume       = 4,

  place        = {United States},

  year         = {Tue Nov 01 00:00:00 EDT 2016},

  month        = {Tue Nov 01 00:00:00 EDT 2016}

}

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Works referencing / citing this record:

Exceeding 20% efficiency with in situ group V doping in polycrystalline CdTe solar cells
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Metzger, W. K.; Grover, S.; Lu, D.
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Overcoming Carrier Concentration Limits in Polycrystalline CdTe Thin Films with In Situ Doping
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Experimental and theoretical comparison of Sb, As, and P diffusion mechanisms and doping in CdTe
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Title: Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe

Abstract

Citation Formats

Evidence of a deep donor in CdTe journal, February 1992

The Defect Structure of Phosphorus-Doped CdTe journal, January 1977

Investigation of induced recrystallization and stress in close-spaced sublimated and radio-frequency magnetron sputtered CdTe thin films journal, July 1999

Solar cell efficiency tables (version 48): Solar cell efficiency tables (version 48) journal, June 2016

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First-principles-based analysis of the influence of Cu on CdTe electronic properties journal, May 2013

Donors and acceptors in tellurium compounds; The problem of doping and self-compensation journal, July 1985

Cd-rich and Te-rich low-temperature photoluminescence in cadmium telluride journal, March 2014

Phase control of CuxTe film and its effects on CdS/CdTe solar cell journal, May 2007

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Deep energy levels in CdTe and CdZnTe journal, February 1998

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Minority Carrier Lifetime Analysis in the Bulk of Thin-Film Absorbers Using Subbandgap (Two-Photon) Excitation journal, October 2013

Identification of Cu and Ag acceptors in CdTe journal, September 1982

Localized defects in p-CdTe:Cu doped by copper incorporation during Bridgman growth journal, September 1988

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A comprehensive picture of Cu doping in CdTe solar cells journal, November 2013

Shallow Acceptors in Cadmium Telluride journal, February 1982

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Long carrier lifetimes in large-grain polycrystalline CdTe without CdCl2 journal, June 2016

Dependence of the Minority-Carrier Lifetime on the Stoichiometry of CdTe Using Time-Resolved Photoluminescence and First-Principles Calculations journal, August 2013

Copper inclusion and migration from the back contact in CdTe solar cells journal, March 2004

The role of impurities in refined ZnSe and other II–VI semiconductors journal, September 1982

Deep-level impurities in CdTe/CdS thin-film solar cells journal, December 2000

CdTe solar cells with open-circuit voltage breaking the 1 V barrier journal, February 2016

The impact of Cu on recombination in high voltage CdTe solar cells journal, December 2015

Influence of Cd vacancies on the photoluminescence of CdTe journal, July 1986

Photoluminescence study of Cu diffusion and electromigration in CdTe journal, July 1999

CdTe Solar Cells at the Threshold to 20% Efficiency journal, October 2013

Vapor pressure scanning implications of CdTe crystal growth journal, February 1999

Native point defects in CdTe and its stability region journal, January 1993

Photoluminescence study of a bulk vapour grown CdTe crystal journal, November 2000

Excited states of acceptors in CdTe and ZnTe journal, April 1990

Optical investigations of defects in Cd 1 − x Zn x Te journal, April 1995

Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe journal, October 2002

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The Defect Structure of Phosphorus-Doped CdTe
journal, January 1977

Investigation of induced recrystallization and stress in close-spaced sublimated and radio-frequency magnetron sputtered CdTe thin films
journal, July 1999

Solar cell efficiency tables (version 48): Solar cell efficiency tables (version 48)
journal, June 2016

Luminescence study of copper‐implanted and rapid‐thermal‐annealed cadmium telluride
journal, July 1988

New perspective on the performance stability of CdTe solar cells
journal, March 2016

Intrinsic surface passivation of CdTe
journal, October 2015

In Situ Arsenic Doping of CdTe/Si by Molecular Beam Epitaxy
journal, July 2015

Phosphorus implanted cadmium telluride solar cells
journal, August 2011

Time-resolved photoluminescence studies of CdTe solar cells
journal, September 2003

Cu-related recombination in CdS/CdTe solar cells
journal, February 2008

Excited states of Ag and Cu acceptors in CdTe
journal, October 1982

First-principles-based analysis of the influence of Cu on CdTe electronic properties
journal, May 2013

Donors and acceptors in tellurium compounds; The problem of doping and self-compensation
journal, July 1985

Cd-rich and Te-rich low-temperature photoluminescence in cadmium telluride
journal, March 2014

Phase control of CuxTe film and its effects on CdS/CdTe solar cell
journal, May 2007

Effects of copper in high resistivity cadmium telluride
journal, July 1988

Photoluminescence and recombination centers in phosphorus-doped and undoped CdTe heat-treated under component vapour pressures
journal, July 1980

Doping of polycrystalline CdTe for high-efficiency solar cells on flexible metal foil
journal, August 2013

Deep energy levels in CdTe and CdZnTe
journal, February 1998

CdCl2 treatment, S diffusion, and recombination in polycrystalline CdTe
journal, May 2006

Single-crystal CdTe solar cells with V _oc greater than 900 mV
journal, August 2014

Minority Carrier Lifetime Analysis in the Bulk of Thin-Film Absorbers Using Subbandgap (Two-Photon) Excitation
journal, October 2013

Identification of Cu and Ag acceptors in CdTe
journal, September 1982

Localized defects in p-CdTe:Cu doped by copper incorporation during Bridgman growth
journal, September 1988

Phosphorus Diffusion Mechanisms and Deep Incorporation in Polycrystalline and Single-Crystalline CdTe
journal, May 2016

Dependence of carrier lifetime on Cu-contacting temperature and ZnTe:Cu thickness in CdS/CdTe thin film solar cells
journal, February 2009

First-principles study of roles of Cu and Cl in polycrystalline CdTe
journal, January 2016

A comprehensive picture of Cu doping in CdTe solar cells
journal, November 2013

Shallow Acceptors in Cadmium Telluride
journal, February 1982

Photoluminescence of Cu-doped CdTe and related stability issues in CdS/CdTe solar cells
journal, September 2000

Ohmic contact and impurity conduction in P−doped CdTe
journal, March 1975

Long carrier lifetimes in large-grain polycrystalline CdTe without CdCl2
journal, June 2016

Dependence of the Minority-Carrier Lifetime on the Stoichiometry of CdTe Using Time-Resolved Photoluminescence and First-Principles Calculations
journal, August 2013

Copper inclusion and migration from the back contact in CdTe solar cells
journal, March 2004

The role of impurities in refined ZnSe and other II–VI semiconductors
journal, September 1982

Deep-level impurities in CdTe/CdS thin-film solar cells
journal, December 2000

CdTe solar cells with open-circuit voltage breaking the 1 V barrier
journal, February 2016

The impact of Cu on recombination in high voltage CdTe solar cells
journal, December 2015

Influence of Cd vacancies on the photoluminescence of CdTe
journal, July 1986

Photoluminescence study of Cu diffusion and electromigration in CdTe
journal, July 1999

CdTe Solar Cells at the Threshold to 20% Efficiency
journal, October 2013

Vapor pressure scanning implications of CdTe crystal growth
journal, February 1999

Native point defects in CdTe and its stability region
journal, January 1993

Photoluminescence study of a bulk vapour grown CdTe crystal
journal, November 2000

Excited states of acceptors in CdTe and ZnTe
journal, April 1990

Optical investigations of defects in ${Cd}_{1 - x}$ ${Zn}_{x}$ Te
journal, April 1995

Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe
journal, October 2002

Cubic contributions to the spherical model of shallow acceptor states
journal, February 1974

Acceptor states in CdTe and comparison with ZnTe. General trends
journal, September 1984

Exceeding 20% efficiency with in situ group V doping in polycrystalline CdTe solar cells
journal, August 2019

Excitation-dependent carrier lifetime and diffusion length in bulk CdTe determined by time-resolved optical pump-probe techniques
journal, January 2018

Back-surface recombination, electron reflectors, and paths to 28% efficiency for thin-film photovoltaics: A CdTe case study
journal, February 2019

Overcoming Carrier Concentration Limits in Polycrystalline CdTe Thin Films with In Situ Doping
journal, September 2018

Experimental and theoretical comparison of Sb, As, and P diffusion mechanisms and doping in CdTe
journal, January 2018

Doping properties of cadmium-rich arsenic-doped CdTe single crystals: Evidence of metastable AX behavior
journal, December 2017