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Title: Direct detection of sub-GeV dark matter with semiconductor targets

Abstract

Dark matter in the sub-GeV mass range is a theoretically motivated but largely unexplored paradigm. Such light masses are out of reach for conventional nuclear recoil direct detection experiments, but may be detected through the small ionization signals caused by dark matter-electron scattering. Semiconductors are well-studied and are particularly promising target materials because their O(1 eV) band gaps allow for ionization signals from dark matter particles as light as a few hundred keV. Current direct detection technologies are being adapted for dark matter-electron scattering. In this paper, we provide the theoretical calculations for dark matter-electron scattering rate in semiconductors, overcoming several complications that stem from the many-body nature of the problem. We use density functional theory to numerically calculate the rates for dark matter-electron scattering in silicon and germanium, and estimate the sensitivity for upcoming experiments such as DAMIC and SuperCDMS. We find that the reach for these upcoming experiments has the potential to be orders of magnitude beyond current direct detection constraints and that sub-GeV dark matter has a sizable modulation signal. We also give the first direct detection limits on sub-GeV dark matter from its scattering off electrons in a semiconductor target (silicon) based on published results frommore » DAMIC. We make available publicly our code, QEdark, with which we calculate our results. Our results can be used by experimental collaborations to calculate their own sensitivities based on their specific setup. In conclusion, the searches we propose will probe vast new regions of unexplored dark matter model and parameter space.« less

Authors:
 [1];  [1];  [2];  [1];  [3];  [1]
  1. Stony Brook Univ., Stony Brook, NY (United States)
  2. Stanford Univ., Stanford, CA (United States)
  3. Tel-Aviv Univ., Tel-Aviv (Israel)
Publication Date:
Research Org.:
State Univ. of New York, Albany, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1326952
Grant/Contract Number:  
SC0008061
Resource Type:
Accepted Manuscript
Journal Name:
Journal of High Energy Physics (Online)
Additional Journal Information:
Journal Name: Journal of High Energy Physics (Online); Journal Volume: 2016; Journal Issue: 5; Journal ID: ISSN 1029-8479
Publisher:
Springer Berlin
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Dark Matter and Double Beta Decay (experiments)

Citation Formats

Essig, Rouven, Fernández-Serra, Marivi, Mardon, Jeremy, Soto, Adrián, Volansky, Tomer, and Yu, Tien -Tien. Direct detection of sub-GeV dark matter with semiconductor targets. United States: N. p., 2016. Web. doi:10.1007/JHEP05(2016)046.
Essig, Rouven, Fernández-Serra, Marivi, Mardon, Jeremy, Soto, Adrián, Volansky, Tomer, & Yu, Tien -Tien. Direct detection of sub-GeV dark matter with semiconductor targets. United States. doi:10.1007/JHEP05(2016)046.
Essig, Rouven, Fernández-Serra, Marivi, Mardon, Jeremy, Soto, Adrián, Volansky, Tomer, and Yu, Tien -Tien. Mon . "Direct detection of sub-GeV dark matter with semiconductor targets". United States. doi:10.1007/JHEP05(2016)046. https://www.osti.gov/servlets/purl/1326952.
@article{osti_1326952,
title = {Direct detection of sub-GeV dark matter with semiconductor targets},
author = {Essig, Rouven and Fernández-Serra, Marivi and Mardon, Jeremy and Soto, Adrián and Volansky, Tomer and Yu, Tien -Tien},
abstractNote = {Dark matter in the sub-GeV mass range is a theoretically motivated but largely unexplored paradigm. Such light masses are out of reach for conventional nuclear recoil direct detection experiments, but may be detected through the small ionization signals caused by dark matter-electron scattering. Semiconductors are well-studied and are particularly promising target materials because their O(1 eV) band gaps allow for ionization signals from dark matter particles as light as a few hundred keV. Current direct detection technologies are being adapted for dark matter-electron scattering. In this paper, we provide the theoretical calculations for dark matter-electron scattering rate in semiconductors, overcoming several complications that stem from the many-body nature of the problem. We use density functional theory to numerically calculate the rates for dark matter-electron scattering in silicon and germanium, and estimate the sensitivity for upcoming experiments such as DAMIC and SuperCDMS. We find that the reach for these upcoming experiments has the potential to be orders of magnitude beyond current direct detection constraints and that sub-GeV dark matter has a sizable modulation signal. We also give the first direct detection limits on sub-GeV dark matter from its scattering off electrons in a semiconductor target (silicon) based on published results from DAMIC. We make available publicly our code, QEdark, with which we calculate our results. Our results can be used by experimental collaborations to calculate their own sensitivities based on their specific setup. In conclusion, the searches we propose will probe vast new regions of unexplored dark matter model and parameter space.},
doi = {10.1007/JHEP05(2016)046},
journal = {Journal of High Energy Physics (Online)},
number = 5,
volume = 2016,
place = {United States},
year = {2016},
month = {5}
}

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    Works referencing / citing this record:

    Sub-GeV dark matter in superfluid He-4: an effective theory approach
    journal, June 2019


    Sub-GeV dark matter in superfluid He-4: an effective theory approach
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