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Title: Use of high-granularity CdZnTe pixelated detectors to correct response non-uniformities caused by defects in crystals

Abstract

Following our successful demonstration of the position-sensitive virtual Frisch-grid detectors, we investigated the feasibility of using high-granularity position sensing to correct response non-uniformities caused by the crystal defects in CdZnTe (CZT) pixelated detectors. The development of high-granularity detectors able to correct response non-uniformities on a scale comparable to the size of electron clouds opens the opportunity of using unselected off-the-shelf CZT material, whilst still assuring high spectral resolution for the majority of the detectors fabricated from an ingot. Here, we present the results from testing 3D position-sensitive 15×15×10 mm3 pixelated detectors, fabricated with conventional pixel patterns with progressively smaller pixel sizes: 1.4, 0.8, and 0.5 mm. We employed the readout system based on the H3D front-end multi-channel ASIC developed by BNL's Instrumentation Division in collaboration with the University of Michigan. We use the sharing of electron clouds among several adjacent pixels to measure locations of interaction points with sub-pixel resolution. By using the detectors with small-pixel sizes and a high probability of the charge-sharing events, we were able to improve their spectral resolutions in comparison to the baseline levels, measured for the 1.4-mm pixel size detectors with small fractions of charge-sharing events. These results demonstrate that further enhancement of themore » performance of CZT pixelated detectors and reduction of costs are possible by using high spatial-resolution position information of interaction points to correct the small-scale response non-uniformities caused by crystal defects present in most devices.« less

Authors:
 [1];  [1];  [1];  [1];  [2];  [2];  [1];  [1];  [1];  [1];  [2];  [1];  [1];  [1]
+ Show Author Affiliations
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. eV Products, Inc., Saxonburg, PA (United States)
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22); USDOE
OSTI Identifier:
1326734
Alternate Identifier(s):
OSTI ID: 1359620
Report Number(s):
BNL-111801-2016-JA
Journal ID: ISSN 0168-9002; R&D Project: 21542; NN200100
Grant/Contract Number:  
SC00112704
Resource Type:
Accepted Manuscript
Journal Name:
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Additional Journal Information:
Journal Volume: 805; Journal Issue: C; Journal ID: ISSN 0168-9002
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CdZnTe; high-granularity detectors; 3D pixelated detectors; crystal defects; charge sharing; charge-loss correction

Citation Formats

Bolotnikov, A. E., Camarda, G. S., Cui, Y., De Geronimo, G., Eger, J., Emerick, A., Fried, J., Hossain, A., Roy, U., Salwen, C., Soldner, S., Vernon, E., Yang, G., and James, R. B. Use of high-granularity CdZnTe pixelated detectors to correct response non-uniformities caused by defects in crystals. United States: N. p., 2015. Web. doi:10.1016/j.nima.2015.08.051.
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Bolotnikov, A. E., Camarda, G. S., Cui, Y., De Geronimo, G., Eger, J., Emerick, A., Fried, J., Hossain, A., Roy, U., Salwen, C., Soldner, S., Vernon, E., Yang, G., & James, R. B. Use of high-granularity CdZnTe pixelated detectors to correct response non-uniformities caused by defects in crystals. United States. https://doi.org/10.1016/j.nima.2015.08.051
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Bolotnikov, A. E., Camarda, G. S., Cui, Y., De Geronimo, G., Eger, J., Emerick, A., Fried, J., Hossain, A., Roy, U., Salwen, C., Soldner, S., Vernon, E., Yang, G., and James, R. B. Sun . "Use of high-granularity CdZnTe pixelated detectors to correct response non-uniformities caused by defects in crystals". United States. https://doi.org/10.1016/j.nima.2015.08.051. https://www.osti.gov/servlets/purl/1326734.
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@article{osti_1326734,
title = {Use of high-granularity CdZnTe pixelated detectors to correct response non-uniformities caused by defects in crystals},
author = {Bolotnikov, A. E. and Camarda, G. S. and Cui, Y. and De Geronimo, G. and Eger, J. and Emerick, A. and Fried, J. and Hossain, A. and Roy, U. and Salwen, C. and Soldner, S. and Vernon, E. and Yang, G. and James, R. B.},
abstractNote = {Following our successful demonstration of the position-sensitive virtual Frisch-grid detectors, we investigated the feasibility of using high-granularity position sensing to correct response non-uniformities caused by the crystal defects in CdZnTe (CZT) pixelated detectors. The development of high-granularity detectors able to correct response non-uniformities on a scale comparable to the size of electron clouds opens the opportunity of using unselected off-the-shelf CZT material, whilst still assuring high spectral resolution for the majority of the detectors fabricated from an ingot. Here, we present the results from testing 3D position-sensitive 15×15×10 mm3 pixelated detectors, fabricated with conventional pixel patterns with progressively smaller pixel sizes: 1.4, 0.8, and 0.5 mm. We employed the readout system based on the H3D front-end multi-channel ASIC developed by BNL's Instrumentation Division in collaboration with the University of Michigan. We use the sharing of electron clouds among several adjacent pixels to measure locations of interaction points with sub-pixel resolution. By using the detectors with small-pixel sizes and a high probability of the charge-sharing events, we were able to improve their spectral resolutions in comparison to the baseline levels, measured for the 1.4-mm pixel size detectors with small fractions of charge-sharing events. These results demonstrate that further enhancement of the performance of CZT pixelated detectors and reduction of costs are possible by using high spatial-resolution position information of interaction points to correct the small-scale response non-uniformities caused by crystal defects present in most devices.},
doi = {10.1016/j.nima.2015.08.051},
journal = {Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment},
number = C,
volume = 805,
place = {United States},
year = {Sun Sep 06 00:00:00 EDT 2015},
month = {Sun Sep 06 00:00:00 EDT 2015}
}
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https://doi.org/10.1016/j.nima.2015.08.051
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Works referenced in this record:

3-D position sensitive CdZnTe gamma-ray spectrometers
journal, February 1999

  • He, Z.; Li, W.; Knoll, G. F.
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Evaluation of a Compton scattering camera using 3-D position sensitive CdZnTe detectors
journal, January 2001

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Use of high-granularity position sensing to correct response non-uniformities of CdZnTe detectors
journal, June 2014

  • Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.
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Novel electrode geometry to improve performance of CdZnTe detectors
journal, February 1998

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CZT drift strip detectors for high energy astrophysics
journal, December 2010

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  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 624, Issue 2
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Sub-Pixel Position Sensing for Pixelated, 3-D Position Sensitive, Wide Band-Gap, Semiconductor, Gamma-Ray Detectors
journal, June 2011

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Studying Spatial Resolution of CZT Detectors Using Sub-Pixel Positioning for SPECT
journal, October 2014

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Readout ASIC for 3D Position-Sensitive Detectors
journal, June 2008

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ASIC for High Rate 3D Position Sensitive Detectors
journal, June 2010

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Characterization of the H3D ASIC Readout System and 6.0 cm$^{3}$ 3-D Position Sensitive CdZnTe Detectors
journal, February 2012

  • Zhang, Feng; Herman, Cedric; He, Zhong
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Development of the high-pressure electro-dynamic gradient crystal-growth technology for semi-insulating CdZnTe growth for radiation detector applications
journal, June 2004

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Comparison of Analog and Digital Readout Electronics on the Processing of Charge-Sharing Events in Pixelated CdZnTe Detectors
journal, April 2014

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  • IEEE Transactions on Nuclear Science, Vol. 61, Issue 2
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    Works referencing / citing this record:

    Room temperature semiconductor detectors for nuclear security
    journal, July 2019

    • Johns, Paul M.; Nino, Juan C.
    • Journal of Applied Physics, Vol. 126, Issue 4
    • DOI: 10.1063/1.5091805

    Role of selenium addition to CdZnTe matrix for room-temperature radiation detector applications
    journal, February 2019

    Charge-transport properties of as-grown Cd 1-x Zn x Te 1-y Se y by the traveling heater method
    journal, December 2018

    • Roy, U. N.; Camarda, G. S.; Cui, Y.
    • AIP Advances, Vol. 8, Issue 12
    • DOI: 10.1063/1.5064373
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