Dose dependence of helium bubble formation in nano-engineered SiC at 700 °C
Abstract
Knowledge of radiation-induced helium bubble nucleation and growth in SiC is essential for applications in fusion and fission environments. Here we report the evolution of microstructure in nano-engineered (NE) 3C SiC, pre-implanted with helium, under heavy ion irradiation at 700 °C up to doses of 30 displacements per atom (dpa). Elastic recoil detection analysis confirms that the as-implanted helium depth profile does not change under irradiation to 30 dpa at 700 °C. While the helium bubble size distribution becomes narrower with increasing dose, the average size of bubbles remains unchanged and the density of bubbles increases somewhat with dose. These results are consistent with a long helium bubble incubation process under continued irradiation at 700 °C up to 30 dpa, similar to that reported under dual and triple beam irradiation at much higher temperatures. The formation of bubbles at this low temperature is enhanced by the nano-layered stacking fault structure in the NE SiC, which enhances point defect mobility parallel to the stacking faults. Here, this stacking fault structure is stable at 700 °C up to 30 dpa and suppresses the formation of dislocation loops normally observed under these irradiation conditions.
- Authors:
-
- Univ. of Tennessee, Knoxville, TN (United States)
- Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Univ. of Tennessee, Knoxville, TN (United States); Missouri Univ. of Science and Technology, Rolla, MO (United States)
- North Carolina State Univ., Raleigh, NC (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- Work for Others (WFO); USDOE
- OSTI Identifier:
- 1267053
- Alternate Identifier(s):
- OSTI ID: 1359406
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Nuclear Materials
- Additional Journal Information:
- Journal Volume: 472; Journal ID: ISSN 0022-3115
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS; SiC; helium; high temperature; irradiation effects; TEM; ERDA
Citation Formats
Chen, Chien -Hung, Zhang, Yanwen, Wang, Yongqiang, Crespillo, Miguel L., Fontana, Cristiano L., Graham, Joseph T., Duscher, Gerd, Shannon, Steven C., and Weber, William J. Dose dependence of helium bubble formation in nano-engineered SiC at 700 °C. United States: N. p., 2016.
Web. doi:10.1016/j.jnucmat.2016.01.029.
Chen, Chien -Hung, Zhang, Yanwen, Wang, Yongqiang, Crespillo, Miguel L., Fontana, Cristiano L., Graham, Joseph T., Duscher, Gerd, Shannon, Steven C., & Weber, William J. Dose dependence of helium bubble formation in nano-engineered SiC at 700 °C. United States. https://doi.org/10.1016/j.jnucmat.2016.01.029
Chen, Chien -Hung, Zhang, Yanwen, Wang, Yongqiang, Crespillo, Miguel L., Fontana, Cristiano L., Graham, Joseph T., Duscher, Gerd, Shannon, Steven C., and Weber, William J. Wed .
"Dose dependence of helium bubble formation in nano-engineered SiC at 700 °C". United States. https://doi.org/10.1016/j.jnucmat.2016.01.029. https://www.osti.gov/servlets/purl/1267053.
@article{osti_1267053,
title = {Dose dependence of helium bubble formation in nano-engineered SiC at 700 °C},
author = {Chen, Chien -Hung and Zhang, Yanwen and Wang, Yongqiang and Crespillo, Miguel L. and Fontana, Cristiano L. and Graham, Joseph T. and Duscher, Gerd and Shannon, Steven C. and Weber, William J.},
abstractNote = {Knowledge of radiation-induced helium bubble nucleation and growth in SiC is essential for applications in fusion and fission environments. Here we report the evolution of microstructure in nano-engineered (NE) 3C SiC, pre-implanted with helium, under heavy ion irradiation at 700 °C up to doses of 30 displacements per atom (dpa). Elastic recoil detection analysis confirms that the as-implanted helium depth profile does not change under irradiation to 30 dpa at 700 °C. While the helium bubble size distribution becomes narrower with increasing dose, the average size of bubbles remains unchanged and the density of bubbles increases somewhat with dose. These results are consistent with a long helium bubble incubation process under continued irradiation at 700 °C up to 30 dpa, similar to that reported under dual and triple beam irradiation at much higher temperatures. The formation of bubbles at this low temperature is enhanced by the nano-layered stacking fault structure in the NE SiC, which enhances point defect mobility parallel to the stacking faults. Here, this stacking fault structure is stable at 700 °C up to 30 dpa and suppresses the formation of dislocation loops normally observed under these irradiation conditions.},
doi = {10.1016/j.jnucmat.2016.01.029},
journal = {Journal of Nuclear Materials},
number = ,
volume = 472,
place = {United States},
year = {Wed Feb 03 00:00:00 EST 2016},
month = {Wed Feb 03 00:00:00 EST 2016}
}
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